Si4410DY
N-channel enhancement mode field-effect transistor
Rev. 02 — 05 July 2001 Product data
c
c
M3D315
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
Si4410DY in SOT96-1 (SO8).
2. Features
■Low on-state resistance
■Fast switching
■TrenchMOS™ technology.
3. Applications
■DC to DC convertors
■DC motor control
■Lithium ion battery applications
■Notebook PC
■Portable equipment applications.
4. Pinning information
1. TrenchMOS is a trademark of Royal Philips Electronics.
Table 1: Pinning - SOT96-1, simplified outline and symbol
Pin Description Simplified outline Symbol
1,2,3 source (s)
SOT96-1 (SO8)
4 gate (g)
5,6,7,8 drain (d)
4
5
1
8
Top view MBK187 s
d
g
MBB076
Philips Semiconductors Si4410DY
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 05 July 2001 2 of 13
9397 750 08048 © Philips Electronics N.V. 2001. All rights reserved.
5. Quick reference data
6. Limiting values
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj=25to150°C−30 V
IDdrain current Tamb =25°C; pulsed; tp≤10 s −10 A
Ptot total power dissipation Tamb =25°C; pulsed; tp≤10 s −2.5 W
Tjjunction temperature −150 °C
RDSon drain-source on-state resistance VGS = 10 V; ID= 10 A; Tj=25°C 11 13.5 mΩ
VGS = 4.5 V; ID= 5 A; Tj=25°C 1520mΩ
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj=25to150°C−30 V
VGS gate-source voltage (DC) −±20 V
IDdrain current Tamb =25°C; pulsed; tp≤10 s; Figure 2 and 3−10 A
Tamb =70°C; pulsed; tp≤10 s; Figure 2 −8A
IDM peak drain current Tamb =25°C; pulsed; tp≤10 µs; Figure 3 −50 A
Ptot total power dissipation Tamb =25°C; pulsed; tp≤10 s; Figure 1 −2.5 W
Tamb =70°C; pulsed; tp≤10 s; Figure 1 −1.6 W
Tstg storage temperature −55 +150 °C
Tjoperating junction temperature −55 +150 °C
Source-drain diode
ISsource (diode forward) current Tamb =25°C; pulsed; tp≤10 s −2.3 A
Philips Semiconductors Si4410DY
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 05 July 2001 3 of 13
9397 750 08048 © Philips Electronics N.V. 2001. All rights reserved.
Fig 1. Normalized total power dissipation as a
function of mounting base temperature. Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
Tamb =25°C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa11
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
T
amb
(oC)
P
der
(%)
03aa19
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
T
amb
(oC)
I
der
(%)
Pder Ptot
Ptot 25 C
°
()
---------------------- 100%×=Ider ID
ID25C
°
()
-------------------100%×=
03ae23
10
-2
10
-1
1
10
10
2
10
-1
1 10 10
2
V
DS
(V)
I
D
(A)
D.C.
100 ms
10 ms
R
DSon
= V
DS
/ I
D
1 ms
tp = 10 µs
10 s
tp
tp
T
P
t
T
δ =
Philips Semiconductors Si4410DY
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 05 July 2001 4 of 13
9397 750 08048 © Philips Electronics N.V. 2001. All rights reserved.
7. Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
Rth(j-a) thermal resistance from junction to ambient mounted on a printed circuit board; tp≤10 s;
minimum footprint; Figure 4 50 K/W
Tamb =25°C
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration.
03ad49
10
-2
10
-1
1
10
10
2
10
-4
10
-3
10
-2
10
-1
1 10 10
2
10
3
t
p
(s)
Z
th(j-amb)
(K/W)
single pulse
δ = 0.5
0.2
0.1
0.05
0.02
tp
tp
T
P
t
T
δ =
Philips Semiconductors Si4410DY
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 05 July 2001 5 of 13
9397 750 08048 © Philips Electronics N.V. 2001. All rights reserved.
8. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VGS(th) gate-source threshold voltage ID= 250 µA; VDS =V
GS; Tj=25°C; Figure 9 1−−V
IDSS drain-source leakage current VDS =30V; V
GS =0V
Tj=25°C−−1µA
Tj=55°C−−25 µA
IGSS gate-source leakage current VGS =±20 V; VDS =0V −−100 nA
ID(on) On-state drain current VDS ≥5; VGS =10V 20 −−A
RDSon drain-source on-state resistance VGS = 10 V; ID=10A;Figure 7 and 8−11 13.5 mΩ
VGS = 4.5 V; ID=5A;Figure 7 and 8−15 20 mΩ
Dynamic characteristics
gfs forward transconductance VDS =15V; I
D=10A;Figure 11 −34 −S
Qg(tot) total gate charge ID= 10 A; VDD =15V; V
GS =5V;Figure 14 −21.5 34 nC
Qg(tot) total gate charge ID= 10 A; VDD =15V; V
GS =10V;Figure 14 −40 60 nC
Qgs gate-source charge −8−nC
Qgd gate-drain (Miller) charge −7−nC
td(on) turn-on delay time VDD =25V; R
D=25Ω; VGS =10V; R
G=6Ω− 13.5 30 ns
trrise time −920ns
td(off) turn-off delay time −70 100 ns
tffall time −30 80 ns
Source-drain (reverse) diode
VSD source-drain (diode forward) voltage IS= 2.3A; VGS =0V;Figure 13 −0.7 1.1 V
trr reverse recovery time IS= 2.3 A; dIS/dt = −100 A/µs; VGS =0V −50 80 ns
Philips Semiconductors Si4410DY
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 05 July 2001 6 of 13
9397 750 08048 © Philips Electronics N.V. 2001. All rights reserved.
Tj=25°CT
j=25°C and 150 °C; VDS >ID×RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj=25°C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values. Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ad50
0
10
20
30
40
50
0 0.5 1 1.5
V
DS
(V)
I
D
(A)
3 V
3.2 V
3.4 V
3.6 V
3.8 V10 V
2.8 V
5 V
V
GS
= 2.6 V
03ad52
0
10
20
30
40
50
01234
V
GS
(V)
I
D
(A) V
DS
> I
D
x R
DSon
T
j
= 150 ºC 25 ºC
03ad51
0
0.01
0.02
0.03
0 1020304050
I
D
(A)
R
DSon
(Ω)T
j
= 25 ºC V
GS
= 3.2 V
5 V
10 V
3.4 V 3.6 V
4.5 V
3.8 V
03ad57
0
0.4
0.8
1.2
1.6
2
-60 0 60 120 180
Tj (ºC)
a
aRDSon
RDSon 25 C
°
()
----------------------------
=
Philips Semiconductors Si4410DY
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 05 July 2001 7 of 13
9397 750 08048 © Philips Electronics N.V. 2001. All rights reserved.
ID= 250 µA; VDS =V
GS Tj=25°C; VDS =5V
Fig 9. Gate-source threshold voltage as a function of
junction temperature. Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj=25°C and 150 °C; VDS >ID×RDSon VGS =0V;f=1MHz
Fig 11. Forward transconductance as a function of
drain current; typical values. Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60 0 60 120 180
T
j
(oC)
V
GS(th)
(V) max
typ
min
03aa36
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0 0.5 1 1.5 2 2.5 3
V
GS
(V)
I
D
(A)
maxtypmin
03ae24
0
10
20
30
40
0 1020304050
I
D
(A)
g
fs
(S)
T
j
= 25 ºC
150 ºC
V
DS
> I
D
x R
DSon
03ad54
10
10
3
10
4
10
-1
1 10 10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
Philips Semiconductors Si4410DY
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 05 July 2001 8 of 13
9397 750 08048 © Philips Electronics N.V. 2001. All rights reserved.
Tj=25°C and 150 °C; VGS =0V I
D= 10 A; VDD =15V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
03ad53
0
10
20
30
40
50
0 0.4 0.8 1.2 1.6
V
SD
(V)
I
S
(A)
T
j
= 25 ºC
150 ºC
V
GS
= 0 V
03ad55
0
2
4
6
8
10
0 10203040
Q
G
(nC)
V
GS
(V) I
D
= 10 A
T
j
= 25 ºC
V
DD
= 15 V
Philips Semiconductors Si4410DY
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 05 July 2001 9 of 13
9397 750 08048 © Philips Electronics N.V. 2001. All rights reserved.
9. Package outline
Fig 15. SOT96-1 (SO8).
UNIT A
max. A1A2A3bpcD
(1) E(2) (1)
eH
ELL
pQZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm
inches
1.75 0.25
0.10 1.45
1.25 0.25 0.49
0.36 0.25
0.19 5.0
4.8 4.0
3.8 1.27 6.2
5.8 1.05 0.7
0.6 0.7
0.3 8
0
o
o
0.25 0.10.25
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
1.0
0.4
SOT96-1
X
wM
θ
A
A1
A2
bp
D
HE
Lp
Q
detail X
E
Z
e
c
L
vMA
(A )
3
A
4
5
pin 1 index
1
8
y
076E03S MS-012AA
0.069 0.010
0.004 0.057
0.049 0.01 0.019
0.014 0.0100
0.0075 0.20
0.19 0.16
0.15 0.050 0.244
0.228 0.028
0.024 0.028
0.012
0.010.010.041 0.004
0.039
0.016
0 2.5 5 mm
scale
SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
95-02-04
97-05-22
Philips Semiconductors Si4410DY
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 05 July 2001 10 of 13
9397 750 08048 © Philips Electronics N.V. 2001. All rights reserved.
10. Revision history
Table 6: Revision history
Rev Date CPCN Description
02 20010705 - Correction to IDM condition
01 20010220 - Product specification; initial version
Philips Semiconductors Si4410DY
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 05 July 2001 11 of 13
9397 750 08048 © Philips Electronics N.V. 2001 All rights reserved.
11. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Data sheet status[1] Product status[2] Definition
Objective data Development This data sheet contains data from the objective specification for product development.Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
Philips Semiconductors Si4410DY
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 05 July 2001 12 of 13
9397 750 08048 © Philips Electronics N.V. 2001. All rights reserved.
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(SCA72)
© Philips Electronics N.V. 2001. Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
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Date of release: 05 July 2001 Document order number: 9397 750 08048
Contents
Philips Semiconductors Si4410DY
N-channel enhancement mode field-effect transistor
1 Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7.1 Transient thermal impedance. . . . . . . . . . . . . . 4
8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
