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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A High-Voltage General-Purpose Diode Descriptions Sourced from process 2V. Connection Diagram 1401A 1403A 3 3 3 1 2 1404A 2NC 2 1 3 3 1 1405A SOT-23 1 2 1 2 Ordering Information Part Number Top Mark Package Packing Method MMBD1401A A29 SOT-23 3L Tape and Reel MMBD1403A A32 SOT-23 3L Tape and Reel MMBD1404A A33 SOT-23 3L Tape and Reel MMBD1405A A34 SOT-23 3L Tape and Reel (c) 2004 Fairchild Semiconductor Corporation MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A Rev. 1.1.0 www.fairchildsemi.com MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A -- High-Voltage General-Purpose Diode November 2014 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol WIV Parameter Value Unit Working Inverse Voltage 175 V IO Average Rectified Current 200 mA IF DC Forward Current 600 mA if Recurrent Peak Forward Current 700 mA if(surge) Non-Repetitive Peak Forward Surge Current TSTG Storage Temperature Range TJ Pulse Width = 1.0 second 1.0 Pulse Width = 1.0 microsecond 2.0 A -55 to +150 C 150 C Operating Junction Temperature Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. Thermal Characteristics(3) Values are at TA = 25C unless otherwise noted. Symbol PD RJA Parameter Max. Unit 350 mW Derate above 25C 2.8 mW/C Thermal Resistance, Junction-to-Ambient 357 C/W Power Dissipation Note: 3. Device is mounted on glass epoxy PCB 1.6 inch x 1.6 inch x 0.06 inch, mounting pad for the collector lead minimum 0.93 in2. Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol Parameter BV Breakdown Voltage IR Reverse Current VF CO TRR Conditions IR = 100 A Min. Max. 250 Unit V VR = 120 V 40 nA VR = 175 V 100 nA IF = 10 mA 800 mV 920 mV IF = 200 mA 1.1 V IF = 300 mA 1.25 V Diode Capacitance VR = 0, f = 1.0 MHz 2.0 pF Reverse Recovery Time IF = IR = 30 mA, IRR = 1.0 mA, RL = 100 50 nS Forward Voltage IF = 50 mA (c) 2004 Fairchild Semiconductor Corporation MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A Rev. 1.1.0 760 www.fairchildsemi.com 2 MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A -- High-Voltage General-Purpose Diode Absolute Maximum Ratings(1), (2) IR - REVERSE CURRENT (nA) VVRR - REVERSE VOLTAGE (V) 325 Ta= 25C 300 275 3 5 10 20 30 50 I R - REVERSE CURRENT (uA) 40 30 20 10 0 55 Figure 2. Reverse Current vs. Reverse Voltage IR - 55 to 205 V Ta= 25C Ta= 25C 450 80 400 70 60 350 50 40 300 30 20 180 200 220 240 VR - REVERSE VOLTAGE (V) 250 255 1 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten Degree C increase in Temperature Figure 3. Reverse Current vs. Reverse Voltage IR - 180 to 255 V 725 Ta= 25C 700 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100 VF - 0.1 to 10 mA 650 600 550 500 450 0.1 2 Figure 4. Forward Voltage vs. Forward Current VF - 1.0 to 100 A VVFF - FORWARD VOLTAGE (mV) VVF F - FORWARD VOLTAGE (mV) 75 95 115 135 155 175 195 V R - REVERSE VOLTAGE (V) GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature V VFF - FORWARD VOLTAGE (mV) IIRR - REVERSE CURRENT (nA) 90 Ta= 25C 100 Figure 1. Reverse Voltage vs. Reverse Current BV - 1.0 to 100 A 100 50 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10 Figure 5. Forward Voltage vs. Forward Current VF - 0.1 to 10 mA (c) 2004 Fairchild Semiconductor Corporation MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A Rev. 1.1.0 1.4 Ta= 25C 1.3 1.2 1.1 1 0.9 0.8 0.7 10 20 30 50 100 200 300 IF - FORWARD CURRENT (mA) 500 800 Figure 6. Forward Voltage vs. Forward Current VF - 10 to 800 mA www.fairchildsemi.com 3 MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A -- High-Voltage General-Purpose Diode Typical Performance Characteristics VVFF - FORWARD VOLTAGE (mV) 1.3 Ta= 25C CAPACITANCE (pF) 800 Ta= -40C 600 Ta= 25C 400 Ta= +80C 1.2 1.1 1 0.9 200 0.8 0.001 0.003 0.01 0.03 0.1 0.3 1 I F - FORWARD CURRENT (mA) 3 10 500 50 40 30 20 IF = IR = 30 mA Rloop = 100 Ohms 1 1.5 2 2.5 Irr - REVERSE RECOVERY CURRENT (mA) 2 4 6 8 10 REVERSE VOLTAGE (V) 12 14 15 Figure 8. Capacitance vs. Reverse Voltage I - CURRENT (mA) REVERSE RECOVERY (nS) Figure 7. Forward Voltage vs. Ambient Temperature VF - 1.0 A - 10 mA (- 40 to +80C) 0 400 300 -F OR WA RD CU RR EN TS TE AD Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA 200 100 0 3 IR 0 50 100 150 o TA - AMBIENT TEMPERATURE ( C) Figure 10. Average Rectified Current(IO) and Forward Current (IF) vs. Ambient Temperature(TA) Figure 9. Reverse Recovery Time vs. Reverse Recovery Current (Irr) PD - POWER DISSIPATION (mW) 500 400 DO-35 Pkg 300 SOT-23 Pkg 200 100 0 0 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 200 Figure 11. Power Derating Curve (c) 2004 Fairchild Semiconductor Corporation MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A Rev. 1.1.0 www.fairchildsemi.com 4 MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A -- High-Voltage General-Purpose Diode Typical Performance Characteristics (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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