S-57P1 S Series
FOR AUTOMOTIVE 150°C OPERATION
HIGH-WITHSTAND VOLTAGE
HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC
www.ablic.com
© ABLIC Inc., 2015-2019 Rev.1.4_00
1
This IC, developed by CMOS technology, is a high-accuracy Hall effect latch IC that operates with high temperature and
high-withstand voltage.
The output voltage changes when this IC detects the intensity level of magnetic flux density and a polarity change. Using
this IC with a magnet makes it possible to detect the rotation status in various devices.
This IC includes a reverse voltage protection circuit and an output current limit circuit.
High-density mounting is possible by using the small SOT-23-3S package.
Due to its high-accuracy magnetic characteristics, this IC enables the user to reduce the operational variation in the system.
ABLIC Inc. offers a "magnetic simulation service" that provides the ideal combination of magnets and our Hall effect ICs for
customer systems. Our magnetic simulation service will reduce prototype production, development period and development
costs. In addition, it will contribute to optimization of parts to realize high cost performance.
For more information regarding our magnetic simulation service, contact our sales office.
Caution This product can be used in vehicle equipment and in-vehicle equipment. Before using the product in the
purpose, contact to ABLIC Inc. is indispensable.
Features
Pole detection: Bipolar latch
Output logic*1: VOUT = "L" at S pole detection
V
OUT = "H" at S pole detection
Output form: Nch open-drain output
Magnetic sensitivity*1: BOP = 0.5 mT typ.
B
OP = 1.5 mT typ.
B
OP = 2.2 mT typ.
B
OP = 3.0 mT typ.
Chopping frequency: fC = 500 kHz typ.
Output delay time: tD = 8.0 μs typ.
Power supply voltage range: VDD = 2.7 V to 26.0 V
Built-in regulator
Built-in reverse voltage protection circuit
Built-in output current limit circuit
Operation temperature range: Ta = 40°C to +150°C
Lead-free (Sn 100%), halogen-free
AEC-Q100 qualified *2
*1. The option can be selected.
*2. Contact our sales office for details.
Applications
Automobile equipment
Home appliance
DC brushless motor
Housing equipment
Industrial equipment
Package
SOT-23-3S
FOR AUTOMOTIVE 150°C OPERATION
HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC
S-57P1 S Series Rev.1.4_00
2
Block Diagram
OUT
VDD
VSS
*1
Regulator
Chopping
stabilized
am
p
lifie
r
Output current limit circuit
Reverse voltage
protection circuit
*1. Parasitic diode
Figure 1
FOR AUTOMOTIVE 150°C OPERATION
HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC
Rev.1.4_00 S-57P1 S Series
3
AEC-Q100 Qualified
This IC supports AEC-Q100 for operation temperature grade 0.
Contact our sales office for details of AEC-Q100 reliability specification.
Product Name Structure
1. Product name
S-57P1 N B x x S - M3T4 U
Environmental code
U: Lead-free (Sn 100%), halogen-free
Package abbreviation and IC packing specifications*1
M3T4: SOT-23-3S, Tape
Operation temperature
S: Ta = 40°C to +150°C
Magnetic sensitivity
9: B
OP = 0.5 mT typ.
0: B
OP = 1.5 mT typ.
8: B
OP = 2.2 mT typ.
1: B
OP = 3.0 mT typ.
Output logic
L: V
OUT = "L" at S pole detection
H: V
OUT = "H" at S pole detection
Pole detection
B: Bipolar latch
Output form
N: Nch open-drain output
*1. Refer to the tape drawing.
2. Package
Table 1 Package Drawing Codes
Package Name Dimension Tape Reel
SOT-23-3S MP003-D-P-SD MP003-D-C-SD MP003-D-R-SD
3. Product name list
Table 2
Product Name Output Form Pole Detection Output Logic Magnetic
Sensitivity (BOP)
S-57P1NBL9S-M3T4U Nch open-drain output Bipolar latch VOUT = "L" at S pole detection 0.5 mT typ.
S-57P1NBL0S-M3T4U Nch open-drain output Bipolar latch VOUT = "L" at S pole detection 1.5 mT typ.
S-57P1NBL8S-M3T4U Nch open-drain output Bipolar latch VOUT = "L" at S pole detection 2.2 mT typ.
S-57P1NBL1S-M3T4U Nch open-drain output Bipolar latch VOUT = "L" at S pole detection 3.0 mT typ.
S-57P1NBH9S-M3T4U Nch open-drain output Bipolar latch VOUT = "H" at S pole detection 0.5 mT typ.
S-57P1NBH0S-M3T4U Nch open-drain output Bipolar latch VOUT = "H" at S pole detection 1.5 mT typ.
S-57P1NBH1S-M3T4U Nch open-drain output Bipolar latch VOUT = "H" at S pole detection 3.0 mT typ.
Remark Please contact our sales office for products other than the above.
FOR AUTOMOTIVE 150°C OPERATION
HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC
S-57P1 S Series Rev.1.4_00
4
Pin Configuration
1. SOT-23-3S
23
1
Top view
Table 3
Pin No. Symbol Description
1 VSS GND pin
2 VDD Power supply pin
3 OUT Output pin
Figure 2
Absolute Maximum Ratings
Table 4
(Ta = +25°C unless otherwise specified)
Item Symbol Absolute Maximum Rating Unit
Power supply voltage VDD VSS 28.0 to VSS + 28.0 V
Output current IOUT 20 mA
Output voltage VOUT VSS 0.3 to VSS + 28.0 V
Junction temperature Tj 40 to +170 °C
Operation ambient temperature Topr 40 to +150 °C
Storage temperature Tstg 40 to +170 °C
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
Thermal Resistance Value
Table 5
Item Symbol Condition Min. Typ. Max. Unit
Junction-to-ambient thermal resistance*1 θja SOT-23-3S
Board A200 − °C/W
Board B165 − °C/W
Board C°C/W
Board D°C/W
Board E − − − °C/W
*1. Test environment: compliance with JEDEC STANDARD JESD51-2A
Remark Refer to " Power Dissipation" and "Test Board" for details.
FOR AUTOMOTIVE 150°C OPERATION
HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC
Rev.1.4_00 S-57P1 S Series
5
Electrical Characteristics
Table 6
(Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit Test
Circuit
Power supply voltage VDD 2.7 12.0 26.0 V
Current consumption IDD Average value 3.0 4.0 mA 1
Current consumption
during reverse connection IDDREV V
DD = 26.0 V 0.1 mA 1
Output voltage VOUT I
OUT = 10 mA 0.4 V 2
Leakage current ILEAK Output transistor Nch, VOUT = 26.0 V 1 μA 3
Output limit current IOM V
OUT = 12.0 V 22 70 mA 3
Output delay time tD 8.0 μs
Chopping frequency fC − − 500 kHz
Start up time tPON 20 μs 4
Output rise time tR C = 20 pF, R = 820 Ω 2.0 μs 5
Output fall time tF C = 20 pF, R = 820 Ω − 2.0 μs 5
BOP
BRP
Magnetic flux densit
y
applied to this IC (B) 0
Output voltage (VOUT)
(Product with VOUT = "H"
at S pole detection)
Output voltage (VOUT)
(Product with VOUT = "L"
at S pole detection)
S pole
N pole
90%
10%
90%
10%
tD
tF
tD
tR
tD
tR
tD
tF
Figure 3 Operation Timing
FOR AUTOMOTIVE 150°C OPERATION
HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC
S-57P1 S Series Rev.1.4_00
6
Magnetic Characteristics
1. Product with BOP = 0.5 mT typ.
Table 7
(Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit Test Circuit
Operation point*1 S pole BOP 0.5 0.5 1.5 mT 4
Release point*2 N pole BRP 1.5 0.5 0.5 mT 4
Hysteresis width*3 BHYS B
HYS = BOP BRP 1.0 mT 4
2. Product with BOP = 1.5 mT typ.
Table 8
(Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit Test Circuit
Operation point*1 S pole BOP 0.5 1.5 2.5 mT 4
Release point*2 N pole BRP 2.5 1.5 0.5 mT 4
Hysteresis width*3 BHYS B
HYS = BOP BRP 3.0 mT 4
3. Product with BOP = 2.2 mT typ.
Table 9
(Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit Test Circuit
Operation point*1 S pole BOP 1.2 2.2 3.2 mT 4
Release point*2 N pole BRP 3.2 2.2 1.2 mT 4
Hysteresis width*3 BHYS B
HYS = BOP BRP 4.4 mT 4
4. Product with BOP = 3.0 mT typ.
Table 10
(Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit Test Circuit
Operation point*1 S pole BOP 2.0 3.0 4.0 mT 4
Release point*2 N pole BRP 4.0 3.0 2.0 mT 4
Hysteresis width*3 BHYS B
HYS = BOP BRP 6.0 mT 4
*1. B
OP: Operation point
B
OP is the value of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux density
applied to this IC by the magnet (S pole) is increased (by moving the magnet closer).
V
OUT retains the status until a magnetic flux density of the N pole higher than BRP is applied.
*2. B
RP: Release point
BRP is the value of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux density
applied to this IC by the magnet (N pole) is increased (by moving the magnet closer).
V
OUT retains the status until a magnetic flux density of the S pole higher than BOP is applied.
*3. B
HYS: Hysteresis width
BHYS is the difference of magnetic flux density between BOP and BRP.
Remark The unit of magnetic density mT can be converted by using the formula 1 mT = 10 Gauss.
FOR AUTOMOTIVE 150°C OPERATION
HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC
Rev.1.4_00 S-57P1 S Series
7
Test Circuits
S-57P1
S Series
VDD
VSS
OUT
A
R
820 Ω
S-57P1
S Series
VDD
VSS
OUT A
V
Figure 4 Test Circuit 1 Figure 5 Test Circuit 2
VDD
VSS
OUT A
V
S-57P1
S Series
S-57P1
S Series
VDD
VSS
OUT
V
R
820 Ω
Figure 6 Test Circuit 3 Figure 7 Test Circuit 4
S-57P1
S Series
VDD
VSS
OUT
R
820 Ω
V
C
20 pF
Figure 8 Test Circuit 5
FOR AUTOMOTIVE 150°C OPERATION
HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC
S-57P1 S Series Rev.1.4_00
8
Standard Circuit
S-57P1
S Series
VDD
VSS
OUT
C
IN
R
820 Ω
0.1
μ
F
Figure 9
Caution The above connection diagram and constants will not guarantee successful operation. Perform
thorough evaluation using the actual application to set the constants.
FOR AUTOMOTIVE 150°C OPERATION
HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC
Rev.1.4_00 S-57P1 S Series
9
Operation
1. Direction of applied magnetic flux
This IC detects the magnetic flux density which is vertical to the marking surface.
Figure 10 shows the direction in which magnetic flux is being applied.
S
N
Marking surface
Figure 10
2. Position of Hall sensor
Figure 11 shows the position of Hall sensor.
The center of this Hall sensor is located in the area indicated by a circle, which is in the center of a package as
described below.
The following also shows the distance (typ. value) between the marking surface and the chip surface of a package.
1
Top view
2 3
The center of Hall sensor,
in this φ0.3 mm
0.315 mm (typ.)
Figure 11
FOR AUTOMOTIVE 150°C OPERATION
HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC
S-57P1 S Series Rev.1.4_00
10
3. Basic operation
This IC changes the output voltage (VOUT) according to the level of the magnetic flux density (N pole or S pole) and a
polarity change applied by a magnet.
3. 1 Product with VOUT = "L" at S pole detection
When the magnetic flux density of the S pole perpendicular to the marking surface exceeds the operation point
(BOP) after the S pole of a magnet is moved closer to the marking surface of this IC, VOUT changes from "H" to "L".
When the N pole of a magnet is moved closer to the marking surface of this IC and the magnetic flux density of the
N pole is higher than the release point (BRP), VOUT changes from "L" to "H". In case of BRP < B < BOP, VOUT retains
the status. Figure 12 shows the relationship between the magnetic flux density and VOUT.
S pole N pole
Magnetic flux density (B)
V
OUT
0
B
RP
B
OP
B
HYS
H
L
Figure 12
3. 2 Product with VOUT = "H" at S pole detection
When the magnetic flux density of the S pole perpendicular to the marking surface exceeds BOP after the S pole of a
magnet is moved closer to the marking surface of this IC, VOUT changes from "L" to "H". When the
N pole of a magnet is moved closer to the marking surface of this IC and the magnetic flux density of the N pole is
higher than BRP, VOUT changes from "H" to "L". In case of BRP < B < BOP, VOUT retains the status.
Figure 13 shows the relationship between the magnetic flux density and VOUT.
S pole
N pole
Magnetic flux density (B)
V
OUT
0
B
RP
B
OP
B
HYS
H
L
Figure 13
FOR AUTOMOTIVE 150°C OPERATION
HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC
Rev.1.4_00 S-57P1 S Series
11
4. Timing chart
Figure 14 shows the timing chart at power-on for product with VOUT = "L" at S pole detection.
The initial output voltage at rising of power supply voltage (VDD) is "H".
In case of B > BOP at the time when the start up time (tPON) is passed after rising of VDD, this IC outputs "L".
In case of B < BOP at the time when tPON is passed after rising of VDD, this IC maintains "H".
"L"
"H"
tPON
"H"
Power supply voltage
(VDD)
Output voltage (VOUT)
(B > BOP)
Output voltage (VOUT)
(B < BOP) Latching
Figure 14
FOR AUTOMOTIVE 150°C OPERATION
HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC
S-57P1 S Series Rev.1.4_00
12
Precautions
If the impedance of the power supply is high, the IC may malfunction due to a supply voltage drop caused by feed-
through current. Take care with the pattern wiring to ensure that the impedance of the power supply is low.
Note that the IC may malfunction if the power supply voltage rapidly changes. When the IC is used under the
environment where the power supply voltage rapidly changes, it is recommended to judge the output voltage of the IC
by reading it multiple times.
Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
Although this IC has a built-in output current limit circuit, it may suffer physical damage such as product deterioration
under the environment where the absolute maximum ratings are exceeded.
Although this IC has a built-in reverse voltage protection circuit, it may suffer physical damage such as product
deterioration under the environment where the absolute maximum ratings are exceeded.
The application conditions for the power supply voltage, the pull-up voltage, and the pull-up resistor should not exceed
the power dissipation.
Large stress on this IC may affect the magnetic characteristics. Avoid large stress which is caused by the handling
during or after mounting the IC on a board.
ABLIC Inc. claims no responsibility for any disputes arising out of or in connection with any infringement by products
including this IC of patents owned by a third party.
FOR AUTOMOTIVE 150°C OPERATION
HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC
Rev.1.4_00 S-57P1 S Series
13
Characteristics (Typical Data)
1. Operation point, release point (BOP, BRP) vs. Temperature (Ta)
1. 1 S-57P1NBx9S 1. 2 S-57P1NBx0S
25 0 15012510075502540
Ta [°C]
1.5
1.5
B
OP
, B
RP
[mT]
1.0
0.5
0.0
0.5
1.0 V
DD
= 2.7 V
V
DD
= 2.7 V
B
OP
B
RP
V
DD
= 12.0 V
V
DD
= 12.0 V
V
DD
= 26.0 V
V
DD
= 26.0 V
25 0 15012510075502540
Ta [°C]
3.0
3.0
B
OP
, B
RP
[mT]
2.0
1.0
0.0
1.0
2.0 B
RP
V
DD
= 12.0 V V
DD
= 26.0 V
V
DD
= 2.7 V
V
DD
= 2.7 V
B
OP
V
DD
= 12.0 V V
DD
= 26.0 V
1. 3 S-57P1NBx8S 1. 4 S-57P1NBx1S
25 0 15012510075502540
Ta [°C]
4.0
4.0
B
OP
, B
RP
[mT]
2.0
0.0
2.0 V
DD
= 2.7 V
V
DD
= 2.7 V
B
OP
B
RP
V
DD
= 12.0 V
V
DD
= 12.0 V
V
DD
= 26.0 V
V
DD
= 26.0 V
25 0 15012510075502540
Ta [°C]
6.0
6.0
B
OP
, B
RP
[mT]
2.0
4.0
0.0
4.0
2.0 V
DD
= 12.0 V
V
DD
= 12.0 V
B
OP
B
RP
V
DD
= 2.7 V
V
DD
= 2.7 V
V
DD
= 26.0 V
V
DD
= 26.0 V
2. Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD)
2. 1 S-57P1NBx9S 2. 2 S-57P1NBx0S
50 1015202530
V
DD
[V]
B
OP
, B
RP
[mT]
1.5
1.5
1.0
0.5
0.0
0.5
1.0 °C
°C
Ta = 40°C
Ta = 40°C
°C
°C
50 1015202530
V
DD
[V]
B
OP
, B
RP
[mT]
3.0
3.0
2.0
1.0
0.0
1.0
2.0
Ta = 40°C
Ta = 40°C
°C
°C
°C
°C
2. 3 S-57P1NBx8S 2. 4 S-57P1NBx1S
50 1015202530
V
DD
[V]
B
OP
, B
RP
[mT]
4.0
2.0
0.0
2.0
4.0
Ta = 40°C
Ta = 40°C
°C
°C
°C
°C
50 1015202530
V
DD
[V]
B
OP
, B
RP
[mT]
6.0
6.0
4.0
2.0
0.0
2.0
4.0
Ta = 40°C
Ta = 40°C
°C
°C
°C
°C
FOR AUTOMOTIVE 150°C OPERATION
HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC
S-57P1 S Series Rev.1.4_00
14
3. Current consumption (IDD)
vs. Temperature (Ta)
4. Current consumption (IDD)
vs. Power supply voltage (VDD)
25 0 15012510075502540
Ta [°C]
0.0
6.0
I
DD
[mA]
4.0
5.0
3.0
1.0
2.0
V
DD
= 12.0 V
V
DD
= 2.7 V
V
DD
= 26.0 V
50 1015202530
VDD [V]
IDD [mA]
0.0
6.0
5.0
4.0
3.0
2.0
1.0
Ta = +25°C
Ta = 40°C
Ta = +150°C
5. Output delay time (tD) vs. Temperature (Ta) 6. Output delay time (tD)
vs. Power supply voltage (VDD)
25 0 15012510075502540
Ta [°C]
0
20
tD [
μ
s]
15
10
5
VDD = 2.7 V
VDD = 12.0 V VDD = 26.0 V
50 1015202530
V
DD
[V]
t
D
[μs]
20
15
10
5
0
Ta = 40°CTa = +150°C
Ta = +25°C
7. Output voltage (VOUT) vs. Temperature (Ta) 8. Output voltage (VOUT)
vs. Power supply voltage (VDD)
IOUT = 10 mA IOUT = 10 mA
25 0 15012510075502540
Ta [°C]
0.0
0.6
V
OUT
[V]
0.4
0.5
0.3
0.1
0.2
V
DD
= 12.0 V
V
DD
= 2.7 V
V
DD
= 26.0 V
V
OUT
[V]
0.6
0.5
0.4
0.3
0.2
0.1 Ta = 40°C
501015202530
0.0
V
DD
[V]
Ta = +25°CTa = +150°C
FOR AUTOMOTIVE 150°C OPERATION
HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC
Rev.1.4_00 S-57P1 S Series
15
Power Dissipation
0 25 50 75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
Ambient temperature (Ta) [°C]
Power dissipation (P
D
) [W]
T
j
= +170°C max.
SOT-23-3S
B
A
Board Power Dissipation (PD)
A 0.73 W
B 0.88 W
C
D
E
(1)
1
2
3
4
(2)
1
2
3
4
Thermal via -
Material FR-4
Number of copper foil layer 4
Copper foil layer [mm]
Land pattern and wiring for testing: t0.070
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.070
Thermal via -
Board B
Item Specification
Size [mm] 114.3 x 76.2 x t1.6
Number of copper foil layer 2
Copper foil layer [mm]
Land pattern and wiring for testing: t0.070
-
-
74.2 x 74.2 x t0.070
Board A
Item Specification
Size [mm] 114.3 x 76.2 x t1.6
Material FR-4
ICMountArea
SOT-23-3/3S/5/6 Test Board
No. SOT23x-A-Board-SD-2.0
ABLIC Inc.
No.
TITLE
ANGLE
UNIT
ABLIC Inc.
No. MP003-D-P-SD-1.1
MP003-D-P-SD-1.1
SOT233S-A-PKG Dimensions
2.9±0.2
0.95±0.1
1.9±0.2
+0.1
-0.06
0.16
0.4±0.1
1
23
mm
No.
TITLE
ANGLE
UNIT
ABLIC Inc.
No. MP003-D-C-SD-1.0
MP003-D-C-SD-1.0
SOT233S-A-Carrier Tape
1.4±0.2
0.23±0.1
4.0±0.1
2.0±0.1
4.0±0.1
ø1.5 +0.1
-0
ø1.0
3.2±0.2
Feed direction
1
23
+0.25
-0
mm
No.
TITLE
ANGLE
UNIT
ABLIC Inc.
QTY. 3,000
No. MP003-D-R-SD-1.0
MP003-D-R-SD-1.0
SOT233S-A-Reel
mm
11.4±1.0
9.0
ø13±0.2
(60°) (60°)
Enlarged drawing in the central part
+1.0
- 0.0
Disclaimers (Handling Precautions)
1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and
application circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.
2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of
any specific mass-production design.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the reasons other than the products
described herein (hereinafter "the products") or infringement of third-party intellectual property right and any other
right due to the use of the information described herein.
3. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the incorrect information described
herein.
4. Be careful to use the products within their ranges described herein. Pay special attention for use to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by failures and / or accidents, etc. due to
the use of the products outside their specified ranges.
5. Before using the products, confirm their applications, and the laws and regulations of the region or country where they
are used and verify suitability, safety and other factors for the intended use.
6. When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-related
laws, and follow the required procedures.
7. The products are strictly prohibited from using, providing or exporting for the purposes of the development of
weapons of mass destruction or military use. ABLIC Inc. is not liable for any losses, damages, claims or demands
caused by any provision or export to the person or entity who intends to develop, manufacture, use or store nuclear,
biological or chemical weapons or missiles, or use any other military purposes.
8. The products are not designed to be used as part of any device or equipment that may affect the human body, human
life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control
systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment,
aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses by
ABLIC, Inc. Do not apply the products to the above listed devices and equipments.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by unauthorized or unspecified use of
the products.
9. In general, semiconductor products may fail or malfunction with some probability. The user of the products should
therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread
prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social
damage, etc. that may ensue from the products' failure or malfunction.
The entire system in which the products are used must be sufficiently evaluated and judged whether the products are
allowed to apply for the system on customer's own responsibility.
10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the
product design by the customer depending on the intended use.
11. The products do not affect human health under normal use. However, they contain chemical substances and heavy
metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be
careful when handling these with the bare hands to prevent injuries, etc.
12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used.
13. The information described herein contains copyright information and know-how of ABLIC Inc. The information
described herein does not convey any license under any intellectual property rights or any other rights belonging to
ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of this
document described herein for the purpose of disclosing it to a third-party is strictly prohibited without the express
permission of ABLIC Inc.
14. For more details on the information described herein or any other questions, please contact ABLIC Inc.'s sales
representative.
15. This Disclaimers have been delivered in a text using the Japanese language, which text, despite any translations into
the English language and the Chinese language, shall be controlling.
2.4-2019.07
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