NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
3.Reverse Recovery Test Conditions:I
F
=0.5,I
R
=1A,I
RR
=0.25A.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
I
R
@T
A
=
75 C
@T
J
=125 C
1N4001G thru 1N4007G
FEATURES
Glass passivated chip
Low reverse leakage current
Low forward voltage drop
High current capability
Plastic ma terial has UL flam mability classification 94V-0
ME CHANICAL DAT A
Case : JEDEC DO -41 m olded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
MAXIMUM RATI NGS AND ELECTRICAL CHA RACTERISTICS
Ratings at 25
℃
am bient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
F o r capacitive lo ad, dera te c u rr e n t by 20%
1N
4003G
200
140
200
1N
4001G
50
35
50
1N
4007G
1000
700
1000
1N
4002G
100
70
100
1N
4006G
800
560
800
1N
4005G
600
420
600
1N
4004G
400
280
400
Maxim um Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
Maximum Re c urrent Peak Reverse Volt age
Maximu m R MS Volta ge
Maxim um DC Blocking Voltage
Maximum f orward Voltage at 1.0A DC
Maximum DC Reve rse Current
at Rated DC Blocking Voltage
@T
J
=25 C
1.0
30
1.1
5
50
T
J
Operating Temperature Range
-55 to +150 C
T
STG
Storage Temperature Range
-55 to +150 C
Typic al Thermal Resistance (Note 2)
R
0JA
45
C/W
C
J
Typical Junction Ca pacitanc e (N ote 1 )
10
pF
uA
V
A
A
V
UNIT
V
V
All Dimensions in millimete r
Max.
Mi n.
DO-41
Dim.
A
D
C
B 25.4 5.2 0
-
4.10
0.71
2.00 2.70
0.8 6
DO-41
A
C
D
A
B
CHARACTERISTICS SYMBOL
Maximum Reverse Recovery Time (Note 3)
T
RR
2
us
GLA S S PASS IVA T ED RECTIFIERS
REVERSE VOLTAGE -
50
to
1000
Volts
FORWARD CURRENT -
1. 0
Amperes
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KDDC01
RATING AND CHARACTE RISTIC CURVES
1N4001G thru 1N4007G
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMB ER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
1510 50 100
220
0
10
20
30
40
Pulse width 8.3ms
Single Half-Sine-Wav e
(J EDEC METHOD)
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FOR WARD CURRENT
AMPERES
25
75 100 125 150
0.6
0 50
0.2
1.0
175
SINGLE PHASE HALF W AVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
AMBIENT TEMPERATURE , C
0.8
0.4
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT ,(uA)
20 40 120 140
0
0.1
1.0
100
10
TJ= 125 C
60 80 100
TJ= 25 C
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
CA PACITANCE , (pF)
REVERSE VOLTAGE , VOLTS
10
1100
100
10
1.0 4
IN STANTANEOUS F ORWARD VO LTAGE , VO LTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FOR WARD CURRENT ,(A)
0.2 0.4 1.2 1.4
0
0.1
1.0
10
0.6 0.8 1.0
0.01 1.8
1.6
TJ= 25 C
PULSE WIDTH 300us
REV. 2, 01-Dec-2000, KDDC01
