© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 300 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ300 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C24A
IDM TC= 25°C, pulse width limited by TJM 150 A
IATC= 25°C52A
EAS TC= 25°C1J
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 100 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
TSOLD Plastic body for 10s 260 °C
VISOL 50/60 Hz, RMS t = 1min 2500 V~
IISOL ≤ 1mA t = 1s 3000 V~
MdMounting force 11..66 / 2.5..14.6 N/lb.
Weight 2 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 300 V
VGS(th) VDS = VGS, ID = 4mA 2.5 5.0 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = VDSS 25 μA
VGS = 0V TJ = 125°C 1 mA
RDS(on) VGS = 10V, ID = 26A, Note 1 75 mΩ
PolarHTTM Power
MOSFET HiPerFETTM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
IXFC52N30P VDSS = 300V
ID25 = 24A
RDS(on) ≤≤
≤≤
≤ 75mΩΩ
ΩΩ
Ω
DS99246F(5/08)
trr ≤≤
≤≤
≤ 200ns
Features
UL recognized package
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Avanlache rated
Fast intrinsic diode
Advantages
Easy to mount
Space savings
High power density
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor drives
G = Gate D = Drain
S = Source
G
DS
ISOPLUS 220TM
E153432
Isolated Tab
IXFC52N30P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS = 10V, ID = 26A, Note 1 20 30 S
Ciss 3490 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 550 pF
Crss 130 pF
td(on) 24 ns
tr 22 ns
td(off) 60 ns
tf 20 ns
Qg(on) 110 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 26A 25 nC
Qgd 53 nC
RthJC 1.25 °C/W
RthCS 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 52 A
ISM Repetitive, pulse width limited by TJM 150 A
VSD IF = 52A, VGS = 0V, Note 1 1.5 V
trr 200 ns
QRM 800 nC
IRM 7 A
IF = 25A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 52A
RG = 4Ω (External)
ISOPLUS220TM (IXFC) Outline
Ref: IXYS CO 0177 R0
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
© 2008 IXYS CORPORATION, All rights reserved
IXFC52N30P
Fi g. 2. Extended Output Chara cteristics
@ 25º C
0
25
50
75
100
125
150
0 4 8 1216202428
V
D S
- V o l ts
I
D
- Ampe res
V
GS
= 10V
9V
5V
6V
7V
8V
F ig. 3. O u tp u t Ch aracter istics
@ 125ºC
0
5
10
15
20
25
30
35
40
45
50
55
012345678910
V
D S
- V ol ts
I
D
- Amperes
V
GS
= 10V
8V
6V
7V
5V
F ig. 1. Ou tp u t Ch ar ac ter istics
@ 25ºC
0
5
10
15
20
25
30
35
40
45
50
55
0.00.51.01.52.02.53.03.54.04.55.0
V
D S
- V o l ts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fi g. 4. R
DS(on)
Normalized to I
D
= 26A
V
alue
vs. Junction Te m perature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degree s Centigra de
R
D S (on)
- Normalized
I
D
= 52A
I
D
= 26A
V
GS
= 10V
Fig . 5. R
DS(on)
Norma lize d to I
D
= 26A
V
alue
vs. Drai n Cu r r en t
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
3.8
0 25 50 75 100 125 150
I
D
- A mperes
R
D S (on)
- Normalized
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
Fig. 6. Dra i n Current vs. Ca se
Temperature
0
3
6
9
12
15
18
21
24
27
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
I
D
- Amperes
IXFC52N30P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_52N30P (6S)6-13-06-C
Fi g. 11. Ca pacita nce
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- V ol ts
C apacitance - pF
C
iss
C
oss
C
rss
f = 1M Hz
Fig. 10. Ga te Charge
0
1
2
3
4
5
6
7
8
9
10
0 10203040506070809010
011
012
0
Q
G
- nanoCoul om bs
V
G S
- Vo lts
V
DS
= 150V
I
D
= 26A
I
G
= 10mA
Fig. 7. Input Admitta nce
0
10
20
30
40
50
60
70
80
90
100
4.04.55.05.56.06.57.07.58.0
V
G S
- V o l ts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 8. Tra nsconducta nce
0
5
10
15
20
25
30
35
40
45
50
55
60
0 102030405060708090100
I
D
- A mp ere s
g
f s
- Sie men s
T
J
= - 40ºC
125ºC
25ºC
Fi g. 9. S ource Curre nt vs.
S o ur ce-To -Dr ain Voltag e
0
20
40
60
80
100
120
140
160
0.40.50.60.70.80.91.01.11.21.31.4
V
S D
- V o l ts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 12. Forw ard-Bia s Safe
Operating Area
1
10
100
1000
10 100 1000
VD S - Volts
I D - A mpe res
25µs
1ms
DC
R
DS
(on)
Limi
t
10ms
100ms
T
J
= 25ºC
TJ = 150º C
S ingle P u lse
© 2008 IXYS CORPORATION, All rights reserved
IXFC52N30P
IXYS REF: T_52N30P (6S)6-13-06-C
Fig. 13. M axim um Tra nsi ent Therm al I m pedance
0.01
0.10
1.00
10.00
0.1 1 10 100 1000
P ul s e Wi dt h - mi l l iseconds
Z
(th) J C
-
(ºC/W)
