TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544
T4-LDS-0039 Rev. 1 (080797) Page 1 of 2
DEVICES LEVELS
2N5152 2N5154 JAN
2N5152L 2N5154L JANTX
2N5152U3 2N5154U3 JANTXV
JANS
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 100 Vdc
Emitter-Base Voltage VEBO 5.5 Vdc
Collector Current IC 2.0 Adc
Total Power Dissipation (1)
@ TA = +25°C
@ TC = +25°C PT 1.0
10 W
Operating & Storage Junction Temperature Range TJ , Tstg -65 to +200 °C
Thermal Resistance, Junction-to Case (1) RθJC 10
1.7 (U3) °C/W
Note:
1) See 19500/544 for thermal derating curves.
2) This value applies for PW ≤ 8.3ms, duty cycle ≤ 1%.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 100mAdc, IB = 0 V(BR)CEO 80 Vdc
Emitter-Base Cutoff Current
VEB = 4.0Vdc, IC = 0
VEB = 5.5Vdc, IC = 0 IEBO
1.0
1.0
µAdc
mAdc
Collector-Emitter Cutoff Current
VCE = 60Vdc, VBE = 0
VCE = 100Vdc, VBE = 0 ICES
1.0
1.0
µAdc
mAdc
Collector-Emitter Cutoff Current
VCE = 40Vdc, IB = 0 ICEO 50 µAdc
ON CHARACTERTICS
Forward-Current Transfer Ratio
IC = 50mAdc, VCE = 5Vdc
IC = 2.5Adc, VCE = 5Vdc
2N5152
2N5154
2N5152
2N5154
hFE
20
50
30
70
---
---
90
200
TO-5
2N5152L, 2N5154L
TO-39 (TO-205AD)
2N5152, 2N5154
U-3
2N5152U3, 2N5154U3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544
T4-LDS-0039 Rev. 1 (080797) Page 2 of 2
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions Symbol Min. Max. Unit
IC = 5Adc, VCE = 5Vdc
2N5152
2N5154 hFE 20
40
Collector-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
IC = 5.0Adc, IB = 500mAdc VCE(sat) 0.75
1.5 Vdc
Base-Emitter Voltage Non-Saturation
IC = 2.5Adc, VCE = 5Vdc
VBE 1.45 Vdc
Base-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
IC = 5.0Adc, IB = 500mAdc VBE(sat) 1.45
2.2 Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 500mAdc, VCE = 5Vdc, f = 10MHz 2N5152
2N5154
|hfe| 6
7
Small-signal short Circuit Forward-Current Transfer Ratio
IC = 100mAdc, VCE = 5Vdc, f = 1KHz 2N5152
2N5154
hfe 20
50
Output Capacitance
VCB = 10Vdc, IE = 0, f = 1.0MHz
Cobo 250 pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time
IC = 5Adc, IB1 = 500mAdc ton 0.5
μs
Turn-Off Time
RL = 6Ω toff 1.5
μs
Storage Time IB2 = -500mAdc ts 1.4
μs
Fall Time VBE(OFF) = 3.7Vdc tf 0.5
μs
SAFE OPERATING AREA
DC Tests
TC = +25°C, 1 Cycle, tP = 1.0s
Test 1
VCE = 5.0Vdc, IC = 2.0Adc
Test 2
VCE = 32Vdc, IC = 310mAdc
Test 3
VCE = 80Vdc, IC = 12.5mAdc
