1) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 1
TIP120, TIP121, TIP122 Darlington Transistors
NPN Si-Epitaxial PlanarTransistors NPN
Si-Epitaxial PlanarTransistoren
Version 2004-06-21
Collector current – Kollektorstrom 5 A
Plastic case TO-220AB
Kunststoffgehäuse
Weight approx. – Gewicht ca. 2.2 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1 = B1 2 = C2 3 = E2 Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
TIP120 TIP121 TIP122
Collector-Emitter-voltage B open VCE0 60 V 80 V 100 V
Collector-Base-voltage E open VCB0 60 V 80 V 100 V
Emitter-Base-voltage C open VEB0 50 V
Power dissipation – Verlustleistung
without cooling – ohne Kühlung
with cooling – mit Kühlung TC = 25°C Ptot
Ptot
2 W 1)
65 W
Collector current – Kollektorstrom (dc) IC5 A
Peak Collector current – Kollektor-Spitzenstrom ICM 8 A
Base current – Basisstrom (dc) IB120 mA
Junction temperature – Sperrschichttemperatur Tj- 65…+ 150°C
Storage temperature – Lagerungstemperatur TS- 65…+ 150°C
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Collector-Emitter cutoff current – Kollektorreststrom
IB = 0, VCE = 30 V
IB = 0, VCE = 40 V
IB = 0, VCE = 50 V
TIP120
TIP121
TIP123
ICE0
ICE0
ICE0
–
–
–
–
–
–
500 nA
500 nA
500 nA
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 60 V
IE = 0, VCB = 80 V
IE = 0, VCB = 100 V
TIP120
TIP121
TIP122
ICB0
ICB0
ICB0
–
–
–
–
–
–
200 nA
200 nA
200 nA
1) Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
2) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
2
Darlington Transistors TIP120, TIP121, TIP122
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V IEB0 ––2 mA
Collector saturation voltage – Kollektor-Sättigungsspg. 1)
IC = 3 A, IB = 12 mA
IC = 5 A, IB = 20 mA VCEsat
VCEsat
–
––
–2 V
4 V
Base-Emitter on-voltage – Basis-Emitter-Spannung 1)
IC = 3 A, VCE = 3 V VBEon – – 2.5 V
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 3 V, IC = 0.5 A
VCE = 3 V, IC = 3 A hFE
hFE
1000
1000 –
––
–
Small signal current gain – Kleinsignal-Stromverstärkung
VCE = 4 V, IC = 3 A, f = 1 MHz hfe 4––
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 100 kHz CCB0 – – 200 pF
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft
junction to case – Sperrschicht zu Gehäuse RthA 62.5 K/W 2)
RthC 2 K/W
Admissible torque for mounting
Zulässiges Anzugsdrehmoment M 4 9 ± 10% lb.in.
1 ± 10% Nm
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren TIP125, TIP126, TIP127
Equivalent Circuit – Ersatzschaltbild
B1
C2
E2
T1 T2
