SEMICONDUCTOR BAW56 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E B L L *Small Package : SOT-23. D *Low Forward Voltag : VF=0.92V(Typ.). 2 A 3 G *Fast Reverse Recovery Time : trr=1.6ns(Typ.). H *Small Total Capacitance : CT=2.2pF(Typ.). 1 Q SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Continuous Forward Current IF 250 mA IFSM 2 A Maximum (Peak) Reverse Voltage J K CHARACTERISTIC C MAXIMUM RATING (Ta=25) P N P DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 3 1. CATHODE 1 2. CATHODE 2 3. ANODE Surge Current (10ms) 2 1 225* PD Power Dissipation mW 300** Junction Temperature Storage Temperature Range SOT-23 Tj 150 Tstg -55150 * Note1 : Package Mounted On FR-5 Board (25.4x19.05x1.57mm) ** Note2 : Package Mounted On 99.5% Alumina (10x8x0.6mm) Marking Lot No. H6 Type Name ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. VF(1) IF=1mA - 0.61 - VF(2) IF=10mA - 0.74 - VF(3) IF=150mA - - 1.25 UNIT V Reverse Current IR VR=80V - - 0.5 A Total Capacitance CT VR=0, f=1MHz - - 4.0 pF Reverse Recovery Time trr IF=10mA - - 4.0 nS 2009. 1. 23 Revision No : 1 1/2 BAW56 IF 10 I R - VR 10 REVERSE CURRENT I R (A) FORWARD CURRENT I F (mA) 10 - VF 3 2 10 10 5 Ta C =-2 5 C 1 Ta =2 Ta =1 00 C 10 -1 Ta=100 C 1 Ta=75 C 10 10 -2 0 0.2 0.4 0.6 0.8 1.0 10 1.2 -1 Ta=50 C -2 Ta=25 C -3 0 20 FORWARD VOLTAGE VF (V) 40 t rr REVERSE RECOVERY TIME t rr (ns) 2.5 TOTAL CAPACITANCE C T (pF) f=1MHz Ta=25 C 2.0 1.5 1.0 0.5 0 3 1 10 30 80 REVERSE VOLTAGE VR (V) C T - VR 0.2 60 100 100 Ta=25 C Fig. 1 50 30 10 5 3 1 0.5 0.1 200 IF 0.3 1 3 10 30 100 FORWARD CURRENT I F (mA) REVERSE VOLTAGE VR (V) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM INPUT 0.01F DUT WAVEFORM 50 -6V 2k 50 0 OUTPUT SAMPLING OSCILLOSCOPE (RIN =50) I F =10mA 0 0.1 I R IR 50ns E t rr PULSE GENERATOR (R OUT =50) 2009. 1. 23 Revision No : 1 2/2