2009. 1. 23 1/2
SEMICONDUCTOR
TECHNICAL DATA
BAW56
SILICON EPITAXIAL PLANAR DIODE
Revision No : 1
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
·Small Package : SOT-23.
·Low Forward Voltag : VF=0.92V(Typ.).
·Fast Reverse Recovery Time : trr=1.6ns(Typ.).
·Small Total Capacitance : CT=2.2pF(Typ.).
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q 0.1 MAX
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
Q
1. CATHODE 1
2. CATHODE 2
3. ANODE
21
3
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Type Name
Marking
Lot No.
H 6
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
VF(1) IF=1mA - 0.61 -
V
VF(2) IF=10mA - 0.74 -
VF(3) IF=150mA - - 1.25
Reverse Current IRVR=80V - - 0.5 μA
Total Capacitance CTVR=0, f=1MHz - - 4.0 pF
Reverse Recovery Time trr IF=10mA - - 4.0 nS
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage VRM 85 V
Reverse Voltage VR80 V
Continuous Forward Current IF250 mA
Surge Current (10ms) IFSM 2A
Power Dissipation PD
225*
mW
300**
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
* Note1 : Package Mounted On FR-5 Board (25.4×19.05×1.57mm)
** Note2 : Package Mounted On 99.5% Alumina (10×8×0.6mm)
2009. 1. 23 2/2
BAW56
Revision No : 1
10.2
REVERSE VOLTAGE V (V)
R
RT
C - V
REVERSE CURRENT I (µA)
R
10 0
REVERSE VOLTAGE V (V)
R
TOTAL CAPACITANCE C (pF)
0
I - VI - V
F
FORWARD VOLTAGE V (V)
0
F
10
FORWARD CURRENT I (mA)
FRRF
0.2 0.4 0.6 0.8 1.0 1.2
-2
-1
10
2
10
3
10
1
20 40 60 80
-3
-2
10
-1
10
1
10
T
0.5
1.0
1.5
2.0
2.5
3 10 30 100 200
t - I
F
FORWARD CURRENT I (mA)
0.1
0.5
rr
REVERSE RECOVERY TIME t (ns)
rr F
0.3 1 3 10 30 100
1
3
5
10
30
50
100
Fig. 1. REVERSE RECOVERY TIME(t ) TEST CIRCUIT
rr
50Ω
2kΩ
E
50Ω
INPUT
WAVEFORM INPUT 0.01µFDUT
OUTPUT
SAMPLING
OSCILLOSCOPE
(R =50Ω)
IN
WAVEFORM
0.1 IR
0
IR
F
I =10mA
rr
t
PULSE GENERATOR
(R =50Ω)
OUT
50ns
-6V
0
10
Ta=100 C
Ta=25 C
Ta=-25 C
Ta=100 C
Ta=75 C
Ta=50 C
Ta=25 C
f=1MHz
Ta=25 C
Ta=25 C
Fig. 1
