NTE5408 thru NTE5410
Silicon Controlled Rectifier (SCR)
3 Amp Sensitive Gate, TO5
Description:
The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and
MOS devices. These SCRs feature proprietary, void−free glass−passivated chips and are hermeti-
cally sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and with
a gate current of 200μA.
These NTE SCRs are reverse−blocking triode thyristors and may be switched from off−state to con-
duction by a current pulse applied to the gate terminal. The NTE5408 through NTE5410 are designed
for control applications in lighting, heating, cooling, and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (TC = +100°C), VRRM
NTE5408 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5409 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5410 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Off−State Voltage (TC = +100°C), VDRXM
NTE5408 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5409 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5410 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On−State Current (TC = +75°C, Conduction Angle of 180°), IT(RMS) 4A. . . . . . . . . . . . . . . . . . .
Peak Surge (Non−Repetitive) On−State Current (One Cycle at 50 or 60Hz), ITSM 40A. . . . . . . . . . .
Peak Gate−Trigger Current (3μs Max), IGTM 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate−Power Dissipation (IGT ≤ IGTM for 3μs Max), PGM 20W. . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power Dissipation, PG(AV) 200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, Topr −40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg −40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, Junction−to−Case, RthJC +5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off−State Current IRRM VRRM = Max, VDRXM = Max,
TC = +100°C, RGK = 1kΩ
− − 0.75 mA
IDRXM − − 0.75 mA
Maximum On−State Voltage VTM IT = 10A (Peak) − − 2.2 V
DC Holding Current IHOLD RGK = 1000Ω− − 5mA
DC Gate−Trigger Current IGT VD = 6VDC, RL = 100Ω− − 200 μA
DC Gate−Trigger Voltage VGT VD = 6VDC, RL = 100Ω− − 0.8 V
Gate Controlled Turn−On Time tgt IG x 3GT −1.2 −μs
I2t for Fusing Reference I2tFor SCR Protection − − 2.6 A2sec
Critical Rate of Applied
Forward Voltage
dv/dt
(critical)
RGK = 1kΩ, TC = +100°C−5−V/μs
.250
(6.35)
Max
.500
(12.7)
Min
.352 (8.95) Dia Max
.325 (8.13) Dia Max
45°
.031 (.793)
Cathode
Gate
Anode
.019 (0.5)
