TIP3055, 2955
Complementary Power Transistors
Page 1 31/05/05 V1.0
Complementary Silicon Power Transistors are designed for use in general
purpose power amplifier and switching applications.
Features:
••Power Dissipation-PD= 90W at TC= 25°C.
••DC Current Gain hFE = 20 ~ 100 at IC= 4.0A.
••VCE(sat) = 1.1V (Maximum) at IC= 4.0A, IB= 400mA.
Dimensions Minimum Maximum
A 20.63 22.38
B 15.38 16.20
C 1.90 2.70
D 5.10 6.10
E 14.81 15.22
F 11.72 12.84
G 4.20 4.50
H 1.82 2.46
I 2.92 3.23
J 0.89 1.53
K 5.26 5.66
L 18.50 21.50
M 4.68 5.36
N 2.40 2.80
O 3.25 3.65
P 0.55 0.70
Characteristic Symbol Rating Unit
Collector-Emitter Voltage VCEO 60
V
Collector-Emitter Voltage VCER 70
Collector-Base Voltage VCBO 100
Emitter-Base Voltage VEBO 7.0
Collector Current-Continuous IC15 A
Base Current IB7.0
Total Power Dissipation at Tc= 25°C
Derate above 25°C PD90
0.72
W
W/°C
Operating and Storage Junction Temperature Range TJ, TSTG -65 to +150 °C
Maximum Ratings
Dimensions : Millimetres
Pin 1. Base
2. Collector
3. Emitter
NPN PNP
TIP3055 TIP2955
15 Ampere
Complementary Silicon
Power Transistors
60 Volts
90 Watts
TO-247(3P)
TIP3055, 2955
Complementary Power Transistors
Page 2 31/05/05 V1.0
Electrical Characteristics (TC= 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC= 30mA, IB= 0) VCEO(SUS) 60 - V
Collector Cut off Current
(VCE = 70V, RBE= 100Ω) ICER - 1.0
mA
Collector Cut off Current
(VCE = 30V, IB = 0) ICEO - 0.7
Collector Cut off Current
(VCE = 100V, VBE(off) = 1.5V) ICEV -
5.0
Emitter Cut off Current
(VEB = 7.0V, IC= 0) IEBO -
ON Characteristics (1)
DC Current Gain
(IC= 4.0A, VCE = 4.0V)
(IC= 10A, VCE = 4.0V)
hFE 20
5.0
100 -
Collector-Emitter Saturation Voltage
(IC= 4.0A, IB= 0.4A)
(IC= 10A, IB= 3.3A)
VCE(sat) -1.1
3.0 V
Base-Emitter On Voltage
(IC= 4.0A, VCE = 4.0V) VBE(on) - 1.8
Dynamic Characteristics
Current Gain Bandwidth Product
(IC= 500mA, VCE = 10V, f = 1.0MHz) fT2.5 - MHz
Small-Signal Current Gain
(IC= 1.0A, VCE = 4V, f = 1kHz) hfe 15 - -
Thermal Characteristics
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 1.39 °C/W
Figure - 1 Power Derating
TC, Temperature (°C)
PD, Power Dissipation (Watts)
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%
(2) fT=hfe• ftest
TIP3055, 2955
Complementary Power Transistors
Page 3 31/05/05 V1.0
IC(av)
maximum
(A)
VCEO
maximum
(V)
hFE
minimum
at IC= 4A
Ptot
at 25°C
(W)
Package Type Part Number
15 60 20 90 TO-247
PNP TIP2955
NPN TIP3055
Specifications
Figure - 3 Active Region Safe Operating Area
VCE, Collector Emitter Voltage (Volts)
IC, Collector Current (AMP)
IC, Collector Current (AMP)
Figure - 2 DC Current Gain
hFE, DC Current Gain
There are two limitations on the power handling ability of a transistor: average
junction temperature and second breakdown safe operating area curves indicate
IC-VCE limits of the transistor that must be observed for reliable operation i.e., the
transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure - 3 is based on TC = 150°C; TJ(PK) is variable depending on
power level. Second breakdown pulse limits are valid for duty cycles to 10%
but must be derated for temperature.
For enquiries from all other markets
TIP3055, 2955
Complementary Power Transistors
Page 4 31/05/05 V1.0
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