AAMOSPEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS ..designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining Voltage- Veeous) = 45 V (Min) - BDX33,BDX34 = 60 V (Min) - BDX33A,BDX34A = 80 V (Min) - BDX33B,BDX34B = 100 V(Min) - BDX33C,BDX34C * Monolithic Construction with Built-in Base-Emitter Shunt Resistor MAXIMUM RATINGS NPN BDX33 BDX33A BDX33B BDX33C PNP BDX34 BDX34A BDX34B BDX34C 10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 70 WATTS fv TO-220 Characteristic Symbol] BDX33 | BDX33A | BDX33B |BDX33C | Unit BDX34 | BDX34A | BDX34B | BDX34C Collector-Emitter Voltage Voeo 45 60 80 100 V Collector-Base Voltage Vego 45 60 80 100 V Emitter-Base Voltage Vepo 5.0 V Collector Current - Continuous Io 10 A Peak low 15 Base Current ls 0.25 A Total Power Dissipation Py @T,= 25C 70 Ww Derate above 25C 0.56 wc Operating and Storage Junction| T, ,T sr, C Temperature Range -65 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case | Rojec 1.78 C FIGURE -1 POWER DERATING = P, , POWER DISSIPATION(WATTS) cS 885883888 125 2 50 Ths) 100 150 To , TEMPERATURE(C) A | | Wa ia 9. walt | Lea F Khe PIN 1.BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 14.68 15.31 B 9.78 10.42 Cc 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 297 L 0.33 0.55 M 2.48 2.98 0 3.70 3.90BDX33,A,B,C NPN/ BDX34,A,B,C PNP (nee a ea eee ane e nena ELECTRICAL CHARACTERISTICS ( T,, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) BDX33, BDX34 Voeo(sus) 45 V ( lg= 160 mA, I,= 0 ) BDX33A, BDX34A 60 BDX33B, BDX34B 80 BDX33C, BDX34C 100 Collector Cutoff Current IcEo mA ( Veg 22 V, 1,= 0) BDX33, BDX34 0.5 (V,,* 30 V, I= 0) BDX33A, BDX34A 0.5 ( Veg 40 V, 1,= 0} BDX33B, BDX34B 0.5 (V,e,g= 50 V, 1,= 0) BDX33C, BDX34C 0.5 Collector-Base Cutoff Current leso uA ( Vep Rated Veg, |= 0) 200 Emitter-Base Cutoff Current lego mA ( Veg 5.0 V, I,= 0) 10 ON CHARACTERISTICS (1) DC Current Gain hFE ( Ig= 4.0 A, Vog* 3.0 V ) BDX33/33A/34/34A 750 (I,= 3.0 A, Vog= 3.0 V ) BDX33B/33C/34B/34C 750 Collector-Emitter Saturation Voltage VecEtsat) V (I, #4.0A, Ip = 8.0 mA) BDX33/33A/34/34A 2.5 (Ig=3.0A, I,= 6.0 mA) BDX33B/33C/34B/34C 2.5 Base-Emitter On Voltage Veejon) Vv '(1g= 4.0 A, Veg 3.0 V ) BDX33/33A/34/34A 2.5 (Ig= 3.0 A, Vog= 3.0 V) BDX33B/33C/34B/34C 25 (1) Pulse Test: Pulse Width =300 us,Duty Cycle = 2.0% FIG-2. SAFE OPERATING AREA There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate = Io-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of FIG-2 is base onTjpq=150 C;T isvariable depending on conditions. second breakdown pulse limits are ~~ Bonding Wire Limit Second Breakdown .Valid for duty cycles to 10% provided Typi9q<150C ,At high 7 Thermally Limited case temperatures, thermal limitation will reduce the power T.#25C (Single a ae that can be handled to values less than the limitations imposed by second breakdown. Iz, COLLECTOR CURRENT (Amp) 1.0 2.0 5.0 10 20 50 100 200 Vee , COLLECTOR EMITTER VOLTAGE (VOLTS)