NOTES : 1.Measured at 1.0MHz and applied reverse volt age of 4.0V DC.
2.Thermal Resistance Junction to Lead.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
I
R
C
J
SB570 thru SB5100
FEATURES
M etal-S e miconductor ju n c t ion with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low v oltage, hi gh frequency inverters,free
w h ee ling,a nd po lar ity protection ap plicat ions
MECHANICAL DATA
Case : JEDEC DO-201AD molded plastic
Polarity : Color band denotes cathode
Weight : 0.04 ounces, 1.1 gr ams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Average Forward
Rectified Current
@T
L
=
90 C
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward
Voltage at 5.0A DC
Maximum DC Rev erse Cu rrent
at Rated DC Blocking Voltage
@T
J
=100 C
@T
J
=25 C
Typical Junction
Capacitance (Note 1)
5.0
125
0.85
0.75
0.5
50
135
T
J
Operating Temperature Range
-55 to +150 C
T
STG
Storage Temperature Range
-55 to +150 C
Typical Thermal Resistance (Note 2)
R
0JL
C/W
pF
mA
V
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
SB570
6
All Dimensions in millimeter
Max.
Min.
DO-20 1AD
Dim.
A
D
C
B 25.4 9.50
-
7.30
1.20
4.80 5.30
1.30
DO-201AD
A
C
D
A
B
SCHOTT KY BA RRIER RECTIFIERS
REVERSE VOLTAGE -
70
to
100
Volts
FORWARD CURRENT -
5.0
Amperes
SB580 SB590 SB5100
SEMICONDUCTOR
LITE-ON
70
49
70
80
56
80
90
63
90
100
70
100
@T
J
=100 C
@T
J
=25 C
REV. 1, Apr-2005, KDHF06