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Page <1> V1.025/02/13
Dual Series Switching Diode
Features:
• Fast Switching Speed :6ns (Max.)
• High Conductance
• Connected In Series
• Surface Mount Package Ideally Suited for
Automatic Insertion
Applications:
Small signal switching
Max. Rating @ Ta = 25°C unless otherwise specied
Parameter Symbol Limits Unit
Repetitive peak reverse voltage Vrrm 85 V
Continuous reverse voltage Vr75 V
Peak forward surge current @t = 1μs
@t = 1ms
@t = 1s
Ifsm
4
1
0.5
A
Forward continuous current (Max.) Single diode loaded
Both diodes loaded If215
125 mA
Non-Repetitive peak forward current Ifrm 450 mA
Power dissipation Pd250 mW
Thermal resistance junction to ambient air RθJA 500 °C/W
Junction and storage temperature Tj, Tstg -65 to +150 °C
Electrical Characteristics @ Ta = 25°C unless otherwise specied
Parameter Symbol Conditions Min. Max. Unit
Reverse breakdown voltage V(br)Ir = 2.5μA 75 - V
Reverse voltage leakage current Ir
Vr = 25V
Vr = 75V
Vr = 25V, Tj = 150°C
Vr = 75V, Tj = 150°C
-
35
1
30
50
nA
μA
μA
μA
Forward voltage Vf
If = 1mA
If = 10mA
If = 50mA
If = 150mA
-
715
855
1,000
1,250
V
Diode capacitance CdVr =0V, f=1MHz - 1.5 pF
Reverse recovery time trr If = Ir = 10mA,
Irr = 0.1 × Ir, Rl = 100Ω - 4 ns