Continental Device India Limited Data Sheet Page 1 of 3
TIP100, 101, 102 NPN PLASTIC POWER TRANSISTORS
TIP105, 106, 107 PNP PLASTIC POWER TRANSISTORS
Power Darlingtons for Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS 100 101 102
105 106 107
Collector-base voltage (open emitter) VCBO max. 60 80 100 V
Collector-emitter voltage (open base) VCEO max. 60 80 100 V
Collector current ICmax. 8.0 A
Total power dissipation up to TC = 25°C Ptot max. 80 W
Junction temperature Tjmax. 150 °C
Collector-emitter saturation voltage
IC = 3 A; IB = 6 mA VCEsat max. 2.0 V
D.C. current gain
IC = 3 A; VCE = 4 V hFE min. 1.0 K
max. 20 K
RATINGS (at TA=25°C unless otherwise specified)
Limiting values 100 101 102
105 106 107
Collector-base voltage (open emitter) VCBO max. 60 80 100 V
Collector-emitter voltage (open base) VCEO max. 60 80 100 V
Emitter-base voltage (open collector) VEBO max. 5.0 V
TIP100, TIP101, TIP102
TIP105, TIP106, TIP107
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
123
J
M
G
D
H
A
O
O
K
N
L
FE
C
DIM MIN. MAX.
All dim insions in m m .
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
ODEG 7
12
3
4
IS / IECQ C 700000
IS / IECQ C 750100
IS/IS O 9002
Lic# QSC/L- 000019 .2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
Boca Semicondcutor Corp.
BSC
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Continental Device India Limited Data Sheet Page 2 of 3
Collector current ICmax. 8.0 A
Collector peak current ICM max. 15 A
Base current IBmax. 1.0 A
Total power dissipation up to TC = 25°C Ptot max. 80 W
Derate above 25°C max 0.64 W/°C
Total power dissipation up to TA = 25°C Ptot max. 2.0 W
Derate above 25°C max 0.016 W/°C
Junction temperature Tjmax. 150 °C
Storage temperature Tstg –65 to +150 °
C
THERMAL RESISTANCE
From junction to ambient Rth j–a 62.5 °
C/W
From junction to case Rth j–c 1.56 °
C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified 100 101 102
105 106 107
Collector cutoff current
IB = 0; VCE = 30 V ICEO max. 50 – – µA
IB = 0; VCE = 40 V ICEO max. – 50 – µA
IB = 0; VCE = 50 V ICEO max. – – 50 µA
IE = 0; VCB = 60V ICBO max. 50 – – µA
IE = 0; VCB = 80V ICBO max. – 50 – µA
IE = 0; VCB = 100V ICBO max. – – 50 µA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 8 mA
Breakdown voltages
IC = 30 mA; IB = 0 VCEO(sus)* min. 60 80 100 V
IC = 1 mA; IE = 0 VCBO min. 60 80 100 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltages
IC = 3 A; IB = 6 mA VCEsat* max. 2.0 V
IC = 8 A; IB = 80 mA VCEsat* max. 2.5 V
Base-emitter on voltage
IC = 8 A; VCE = 4 V VBE(on)* max. 2.8 V
D.C. current gain
IC = 3 A; VCE = 4 V hFE* min. 1.0 K
max. 20 K
IC = 8 A; VCE = 4 V hFE* min. 200
Small signal current gain
IC = 3A; VCE = 4V; f = 1.0 MHz |hfe| min. 4.0
Output capacitance f = 0.1 MHz
IE = 0; VCB = 10V, PNP Comax. 300 pF
NPN max. 200 pF
Forward voltage of commutation diode
IF = –IC = 10A; IB = 0 VF* max. 2.8 V
* Pulsed: pulse duration = 300 µs; duty cycle ≤ 2%.
TIP100, TIP101, TIP102
TIP105, TIP106, TIP107
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