NRVBSS24T3G - ON Semiconductor

May, 2017 − Rev. 6

1Publication Order Number:

SS24/D

SS22T3G, SS24T3G,

NRVBSS24T3G,

SBRSS24T3G

Surface Mount

Schottky Power Rectifier

SMB Power Surface Mount Package

These devices employ the Schottky Barrier principle in a

metal−to−silicon power rectifier. Features epitaxial construction with

oxide passivation and metal overlay contact. Ideally suited for low

voltage, high frequency switching power supplies; free wheeling

diodes and polarity protection diodes.

Features

•Compact Package with J−Bend Leads Ideal for Automated Handling

•Highly Stable Oxide Passivated Junction

•Guardring for Over−Voltage Protection

•Low Forward Voltage Drop

•NRVB Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable*

•These Devices are Pb−Free and are RoHS Compliant

Mechanical Characteristics

•Case: Molded Epoxy

•Epoxy Meets UL 94 V−0 @ 0.125 in

•Weight: 95 mg (approximately)

•Cathode Polarity Band

•Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•Available in 12 mm Tape, 2500 Units per 13 in Reel, Add “T3”

Suffix to Part Number

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•ESD Ratings: Machine Model = C

ESD Ratings: Human Body Model = 3B

SCHOTTKY BARRIER

RECTIFIER

2 AMPERES

20, 40 VOLTS

www.onsemi.com

Device Package Shipping†

ORDERING INFORMATION

MARKING DIAGRAM

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SS24T3G SMB

(Pb−Free)

2500 /

Tape & Reel

SS22T3G SMB

(Pb−Free)

2500 /

Tape & Reel

(Note: Microdot may be in either location)

NRVBSS24T3G* SMB

(Pb−Free)

2500 /

Tape & Reel

**The Assembly Location code (A) is front side

optional. In cases where the Assembly Location is

stamped in the package, the front side assembly

code may be blank.

SS2x = Specific Device Code

x = 2 ro 4

A = Assembly Location**

Y = Year

WW = Work Week

G= Pb−Free Package

SMB

CASE 403A

AYWW

SS2xG

SBRSS24T3G SMB

(Pb−Free)

2500 /

Tape & Reel

SS22T3G, SS24T3G, NRVBSS24T3G, SBRSS24T3G

www.onsemi.com

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage SS22

SS24

VRRM

VRWM

VR20

Average Rectified Forward Current

(At Rated VR, TL = 132°C)

IO2.0 A

Peak Repetitive Forward Current

(At Rated VR, Square Wave,

100 kHz, TC = 127°C)

IFRM 3.0 A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

IFSM 75 A

Storage/Operating Case Temperature Tstg, TC−55 to +150 °C

Operating Junction Temperature (Note 1) TJ−55 to +150 °C

Voltage Rate of Change

(Rated VR, TJ = 25°C)

dv/dt 10,000 V/ms

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance,

Junction−to−Lead (Note 2)

Thermal Resistance,

Junction−to−Ambient (Note 3)

RqJL

RqJA

°C/W

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 4)

see Figure 2 (iF = 2.0 A)

vFTJ = 25°C TJ = 125°CV

0.50 0.46

Maximum Instantaneous Reverse Current (Note 4)

see Figure 4 (VR = 40 V)

IRTJ = 25°C TJ = 100°CmA

0.4 5.7

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Mounted with minimum recommended pad size, PC Board FR4.

3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.

4. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤2.0%.

SS22T3G, SS24T3G, NRVBSS24T3G, SBRSS24T3G

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

Figure 5. Current Derating Figure 6. Forward Power Dissipation

0.70.1

vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

1.0

400

VR, REVERSE VOLTAGE (VOLTS)

100E-3

10E-3

1.0E-3

100E-6

10E-6

1.0E-6

30 7010

TL, LEAD TEMPERATURE (°C)

3.5

1.5

1.0

0.5

IO, AVERAGE FORWARD CURRENT (AMPS)

0.5 2.00

1.2

1.0

0.8

0.6

0.2

iF, INSTANTANEOUS FORWARD CURRENT (AMPS)I

0.1

0.3 0.5 0.9

10 20 30

, AVERAGE FORWARD CURRENT (AMPS)IO

150130 1.0

2.5

1.5

0.4

PFO, AVERAGE POWER DISSIPATION (WATTS)

100

TJ = 125°C

100°C

25°C

-40°C

0.70.1

VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

1.0

IF, INSTANTANEOUS FORWARD CURRENT (AMPS)

0.1

0.3 0.5 0.9

100

TJ = 125°C

100°C

25°C

, REVERSE CURRENT (AMPS)

VR, REVERSE VOLTAGE (VOLTS)

100E-3

10E-3

1.0E-3

100E-6

10E-6

1.0E-6

10 20 30

, MAXIMUM REVERSE CURRENT (AMPS)

2.0

RqJL = 24°C/W

TJ = 125°C

100°C

25°C

TJ = 125°C

100°C

25°C

SQUARE WAVE

Ipk/Io = p

Ipk/Io = 5.0

Ipk/Io = 10

Ipk/Io = 20

2.5

3.0

011090

40 8020 60 140120100

SS22T3G, SS24T3G, NRVBSS24T3G, SBRSS24T3G

www.onsemi.com

Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating*

Figure 9. Thermal Response — Junction to Case

Figure 10. Thermal Response — Junction to Ambient

300

VR, REVERSE VOLTAGE (VOLTS)

1000

100

VR, DC REVERSE VOLTAGE (VOLTS)

25 400

105

C, CAPACITANCE (pF)

155.0 10 20 25 35 40 30 355.0 10 2015

115

125

, DERATED OPERATING TEMPERATURE ( C)

J°

* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-

verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating

TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where

r(t) = thermal impedance under given conditions,

Pf = forward power dissipation, and

Pr = reverse power dissipation

This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,

where r(t) = Rthja. For other power applications further calculations must be performed.

Rtja = 24°C/W

43°C/W

63°C/W

80°C/W

93°C/W

TJ = 25°C

0.10.00001

t, TIME (s)

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

0.0001 0.001 0.01

, TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 10 100 1000

50%

20%

10%

5.0%

2.0%

1.0%

Rtjl(t) = Rtjl*r(t)

0.10.00001

t, TIME (s)

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

0.0001 0.001 0.01 1.0 10 100 1000

50%

20%

10%

5.0%

2.0%

1.0% Rtjl(t) = Rtjl*r(t)

R , TRANSIENT THERMAL RESISTANCE (NORMALIZED)

SS22T3G, SS24T3G, NRVBSS24T3G, SBRSS24T3G

www.onsemi.com

PACKAGE DIMENSIONS

SMB

CASE 403A−03

ISSUE J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.

2.261

0.089

2.743

0.108

2.159

0.085 ǒmm

inchesǓ

SCALE 8:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

DIM

MIN NOM MAX MIN

MILLIMETERS

1.95 2.30 2.47 0.077

INCHES

A1 0.05 0.10 0.20 0.002

b1.96 2.03 2.20 0.077

c0.15 0.23 0.31 0.006

D3.30 3.56 3.95 0.130

E4.06 4.32 4.60 0.160

L0.76 1.02 1.60 0.030

0.091 0.097

0.004 0.008

0.080 0.087

0.009 0.012

0.140 0.156

0.170 0.181

0.040 0.063

NOM MAX

5.21 5.44 5.60 0.205 0.214 0.220

0.51 REF 0.020 REF

POLARITY INDICATOR

OPTIONAL AS NEEDED

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Phone: 421 33 790 2910

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Phone: 81−3−5817−1050

SS24/D

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