PRELIMINARY
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1 of 1
Copyright 2000
WWW.Microsemi .COM
BFR92ALT1
RF & MICROWAVE TRANSISTORS
RF PRODUCTS DIVISION
DESCRIPTION
DESCRIPTIONDESCRIPTION
DESCRIPTION
The BFR92ALT1 is a low noise, high gain, discrete
silicon bipolar transistors housed in low cost plastic packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
KEY FEATURES KEY FEATURES
KEY FEATURES
!
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT
APPLICATIONS/BENEFITS
SS
S
! LNA, Oscillator
, Pre-Driver
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
C)
Symbol Parameter Value Unit
VCBO
Collector-Base Voltage 20 V
VCEO
Collector-Emitter Voltage 15 V
VEBO
Emitter-Base Voltage 2.0 V
IC
Device Current 25 mA
PDISS
Power Dissipation 273 mW
TJ
Junction Temperature 150 C
TSTG
Storage Temperature -55 to +150
C
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance 275 C/W
BFR92ALT1
!
!
High FTau-4.5GHz
Low noise-3.0dB@500MHz
Low cost SOT23 package
SOT-23
BFR92ALT1
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25C)
Symbol Test Conditions Min. Typ. Max.
Units
BV
CBO
I
C
= .1mA I
E
= 0 20 V
BV
CEO
I
C
=10mA I
B
= 0
15 V
I
CBO
V
CB
= 10V I
E
= 0
nA
h
FE
V
CB
=10 V I
C
= 14 mA
40
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25C)
Symbol Test Conditions Min. Typ. Max.
Units
f = 1.0 MHz
V
CB
= 10 V
GHz
F
CB
C
FTau
NF
P
4.5
3.0
V
CE
= 10 V I = 14 mA
C
f = 500
MHz
V
CE
= 1.5 V I = 3.0 mA
C
f = 500MHz
dB
0.7
50
