2N2946A Silicon PNP Transistor D a ta S h e e t Description Applications Semicoa offers: * General purpose * Low power * PNP silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N2946AJ) * JANTX level (2N2946AJX) * JANTXV level (2N2946AJV) * JANS level (2N2946AJS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Features * * * * Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Hermetically sealed TO-46 metal can Also available in chip configuration Chip geometry 1317 Reference document: MIL-PRF-19500/382 Benefits * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 35 Emitter-Collector Voltage VECO 35 Unit Volts Volts Collector-Base Voltage VCBO 40 Volts Emitter-Base Voltage VEBO 40 Volts Collector Current, Continuous IC 100 mA Power Dissipation, TC = 25C PT 400 RJA 435 mW C/W TJ & TSTG -65 to +200 C Thermal Resistance Operating Junction and Storage Temperature Copyright(c) 2010 Rev. 4.0 Semicoa Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N2946A Silicon PNP Transistor D a ta S h e e t ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Test Conditions IC = 10 A IE = 10 A, IB = 0 A VCB = 40 Volts VCB = 32 Volts VCB = 40 Volts, TA = 100C VEB = 40 Volts VEB = 32 Volts VEB = 40 Volts, TA = 100C V(BR)CEO V(BR)ECO ICBO1 ICBO2 ICBO3 IEBO1 IEBO2 IEBO3 Forward Current transfer ratio Forward Current transfer ratio (inverted connection) Emitter-Collector Offset Voltage Typ Max Units 10 0.5 2.5 10 0.5 2.0 Volts Volts A nA nA A nA nA 35 35 Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% On Characteristics Parameter Min Symbol hFE1 hFE2 Min 50 20 VEC(ofs)1 VEC(ofs)2 VEC(ofs)3 Test Conditions IC = 1.0 mA, VCE = 0.5 Volts IC = 1.0 mA, VCE = 0.5 Volts, TA = -55C IE = 200 A, VEC = 0.5 Volts IE = 200 A, VEC = 0.5 Volts, TA = -55C IE = 0 A, IB = 200 A IE = 0 A, IB = 1.0 mA IE = 0 A, IB = 2.0 mA Symbol Test Conditions Min hFE(inv)1 hFE(inv)2 Typ Max Units 0.8 2.0 2.5 mVolts Max Units 20 10 Dynamic Characteristics Parameter Magnitude of Common-Emitter SmallSignal Short-Circuit Forward-Current Transfer Ratio VCE = 6 Volts, IC = 1.0 mA, f = 1 MHz |hFE| Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO Small Signal Emitter-Collector OnState Resistance rec(ON)1 Small Signal Emitter-Collector OnState Resistance rec(ON)2 Typ 5 55 VCB = 6 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 6 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz IB = 100 A, IE = 0 A, Ie = 100 A ac (rms) f = 1 kHz IB = 1.0 mA, IE = 0 A, Ie = 100 A ac (rms) f = 1 kHz 10 pF 6.0 pF 14 8 Max Units 50 100 350 100 ns ns ns ns Switching Characteristics Parameter Delay Time Rise Time Storage Time Fall Time Copyright(c) 2010 Rev. 4.0 Symbol Test Conditions Min Typ td tr ts tf Semicoa Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2