BCV27 - NXP SEMICONDUCTORS - Datasheet.World

DATA SH EET

Product data sheet

Supersedes data of 1999 Apr 08 2004 Jan 13

DISCRETE SEMICONDUCTORS

BCV27; BCV47

NPN Darlington transistors

2004 Jan 13 2

NXP Semiconductors Product data sheet

NPN Darlington transistors BCV27; BCV47

FEATURES

•Medium current (max. 500 mA)

•Low voltage (max. 60 V)

•High DC current gain (min. 20 000).

APPLICATIONS

•Preamplifier input applications.

DESCRIPTION

NPN Darlington transistor in a SOT23 plastic package.

PNP complements: BCV26 an d BCV4 6.

MARKING

Note

1. * = p : Made in Hong Kong .

* = t : Made in Malaysia.

* = W : Made in China.

PINNING

TYPE NUMBER MARKING CODE(1)

BCV27 FF*

BCV47 FG*

PIN DESCRIPTION

1base

2emitter

3collector

Fig.1 Simplified outline (SOT23 ) and symbo l .

handbook, halfpage

MAM298

TR2

TR1

Top view

ORDERING INFORMATION

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

BCV27 −plastic surface mounted pa ckage; 3 leads SOT23

BCV47

2004 Jan 13 3

NXP Semiconductors Pr oduct data sheet

NPN Darlington transistors BCV27; BCV47

LIMITING VALUES

In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTE RISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volt a ge open emitter

BCV27 −40 V

BCV47 −80 V

VCES collector-emitter voltage open base

BCV27 −30 V

BCV47 −60 V

VEBO emitter-base voltage open collector −10 V

ICcollector current (DC) −500 mA

ICM peak collector current −800 mA

IBbase curre nt −100 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W

2004 Jan 13 4

NXP Semiconductors Pr oduct data sheet

NPN Darlington transistors BCV27; BCV47

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current

BCV27 IE = 0; VCBO = 30 V − − 100 nA

BCV47 IE = 0; VCBO = 60 V − − 100 nA

IEBO emitter cut-off current IE = 0; VEB = 10 V − − 100 nA

hFE DC current gain VCE = 5 V; (see Fig.2)

BCV27 IC = 1 mA 4 000 − −

IC = 10 mA 1 0 000 − −

IC = 100 mA 2 0 000 − −

DC current gain VCE = 5 V; (see Fig.2)

BCV47 IC = 1 mA 2 000 − −

IC = 10 mA 4 000 − −

IC = 100 mA 10 000 − −

VCEsat collector-emitter saturation

voltage IC = 100 mA; IB = 0.1 mA − − 1 V

VBEsat base-emitt er saturation voltage IC = 100 mA; IB = 0.1 mA − − 1.5 V

VBEon base-emitter on-state voltage IC = 10 mA; VCE = 5 V − − 1.4 V

fTtransition freque ncy IC = 30 mA; VCE = 5 V; f = 100 MHz −220 −MHz

handbook, full pagewidth

60000

80000

20000

40000

MGD837

10−11IC (mA)

hFE

10 102 103

Fig.2 DC current gain; typical values.

VCE = 2 V.

2004 Jan 13 5

NXP Semiconductors Pr oduct data sheet

NPN Darlington transistors BCV27; BCV47

PACKAGE OUTLINE

UNIT A

max. b

cDE e

Qwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

2004 Jan 13 6

NXP Semiconductors Pr oduct data sheet

NPN Darlington transistors BCV27; BCV47

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s ) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

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does not give any representations or warranties,

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of such information and shall have no liability for the

consequenc es of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

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equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modificati on .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

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case of any incons istency or conflict betw een information

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may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, c onveyance or

implication of any license under any copyrights, patents or

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described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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The information pr e sent ed in this documen t d oes not form part of any quotation or co ntract, is believed to b e a ccur ate a nd re li a ble and may be chan ged

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R7 5/05/pp7 Date of release: 2004 Jan 13 Document orde r number: 9397 750 12402