74HC151D CMOS Digital Integrated Circuits Silicon Monolithic 74HC151D 1. Functional Description * 8-Channel Multiplexer 2. General The 74HC151D is a high speed CMOS 8-CHANNEL MULTIPLEXER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. One of eight date input signals (D0-D7) is selected by decoding of the three-bit address input (A, B, C). The selected data appears on two outputs: non-inverting (Y) and inverting (W). The strobe input provides two output conditions; a low level on the strobe input transfers the selected data to the outputs. A high level on the strobe input sets the Y output low and the W output high without regard to the data or select input conditions. All inputs are equipped with protection circuits against static discharge or transient excess voltage. 3. Features (1) High speed: tpd = 15 ns (typ.) at VCC = 5 V (2) Low power dissipation: ICC = 4.0 A (max) at Ta = 25 (3) Balanced propagation delays: tPLH tPHL (4) Wide operating voltage range: VCC(opr) = 2.0 to 6.0 V 4. Packaging SOIC16 Start of commercial production (c)2016 Toshiba Corporation 1 2016-05 2016-08-04 Rev.3.0 74HC151D 5. Pin Assignment 6. Marking 7. IEC Logic Symbol (c)2016 Toshiba Corporation 2 2016-08-04 Rev.3.0 74HC151D 8. Truth Table X: Don't care 9. System Diagram (c)2016 Toshiba Corporation 3 2016-08-04 Rev.3.0 74HC151D 10. Absolute Maximum Ratings (Note) Characteristics Symbol Note Rating Unit Supply voltage VCC -0.5 to 7.0 V Input voltage VIN -0.5 to VCC + 0.5 V VOUT -0.5 to VCC + 0.5 V IIK 20 mA Output diode current IOK 20 mA Output current IOUT 25 mA VCC/ground current ICC Power dissipation PD Storage temperature Tstg Output voltage Input diode current (Note 1) 50 mA 500 mW -65 to 150 Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: PD derates linearly with -8 mW/ above 85 11. Operating Ranges (Note) Characteristics Supply voltage Input voltage Symbol Test Condition Rating Unit VCC 2.0 to 6.0 V VIN 0 to VCC V Output voltage VOUT 0 to VCC V Operating temperature Topr -40 to 125 Input rise and fall times tr,tf 0 to 50 s Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. (c)2016 Toshiba Corporation 4 2016-08-04 Rev.3.0 74HC151D 12. Electrical Characteristics 12.1. DC Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage Symbol Test Condition VCC (V) Min Typ. Max Unit VIH 2.0 1.50 V 4.5 3.15 6.0 4.20 2.0 0.50 4.5 1.35 VIL VOH VOL VIN = VIH or VIL VIN = VIH or VIL 6.0 1.80 2.0 1.9 2.0 4.5 4.4 4.5 6.0 5.9 6.0 IOH = -4 mA 4.5 4.18 4.31 IOH = -5.2 mA 6.0 5.68 5.80 IOL = 20 A 2.0 0.0 0.1 4.5 0.0 0.1 IOH = -20 A 6.0 0.0 0.1 IOL = 4 mA 4.5 0.17 0.26 IOL = 5.2 mA V V V 6.0 0.18 0.26 Input leakage current IIN VIN = VCC or GND 6.0 0.1 A Quiescent supply current ICC VIN = VCC or GND 6.0 4.0 A 12.2. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 ) Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage Symbol Test Condition VCC (V) Min Max Unit VIH 2.0 1.50 V 4.5 3.15 6.0 4.20 2.0 0.50 4.5 1.35 6.0 1.80 2.0 1.9 4.5 4.4 VIL VOH VOL VIN = VIH or VIL VIN = VIH or VIL IOH = -20 A 6.0 5.9 IOH = -4 mA 4.5 4.13 IOH = -5.2 mA 6.0 5.63 IOL = 20 A 2.0 0.1 4.5 0.1 6.0 0.1 IOL = 4 mA 4.5 0.33 IOL = 5.2 mA 6.0 0.33 V V V Input leakage current IIN VIN = VCC or GND 6.0 1.0 A Quiescent supply current ICC VIN = VCC or GND 6.0 40.0 A (c)2016 Toshiba Corporation 5 2016-08-04 Rev.3.0 74HC151D 12.3. DC Characteristics (Unless otherwise specified, Ta = -40 to 125 ) Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage Symbol VIH VIL VOH VOL Test Condition VIN = VIH or VIL VIN = VIH or VIL IOH = -20 A VCC (V) Min Max Unit 2.0 1.50 V 4.5 3.15 6.0 4.20 2.0 0.50 4.5 1.35 6.0 1.80 2.0 1.9 4.5 4.4 6.0 5.9 IOH = -4 mA 4.5 3.7 IOH = -5.2 mA 6.0 5.2 IOL = 20 A 2.0 0.1 4.5 0.1 6.0 0.1 IOL = 4 mA 4.5 0.4 IOL = 5.2 mA 6.0 0.4 V V V Input leakage current IIN VIN = VCC or GND 6.0 1.0 A Quiescent supply current ICC VIN = VCC or GND 6.0 160.0 A 12.4. AC Characteristics (Unless otherwise specified, CL = 15 pF, VCC = 5 V, Ta = 25 , Input: tr = tf = 6 ns) Characteristics Symbol Test Condition Min Output transition time tTLH,tTHL Propagation delay time (D-Y) tPLH,tPHL Propagation delay time (D-W) tPLH,tPHL Propagation delay time (ST-Y) tPLH,tPHL Propagation delay time (ST-W) tPLH,tPHL Propagation delay time (A, B, C-Y) Propagation delay time (A, B, C-W) (c)2016 Toshiba Corporation Max Unit 4 8 ns 15 24 ns 15 24 ns 10 17 ns 10 17 ns tPLH,tPHL 19 31 ns tPLH,tPHL 19 31 ns 6 Typ. 2016-08-04 Rev.3.0 74HC151D 12.5. AC Characteristics (Unless otherwise specified, CL = 50 pF, Ta = 25 , Input: tr = tf = 6 ns) Characteristics Output transition time Propagation delay time (D-Y) Symbol tTLH,tTHL tPLH,tPHL Propagation delay time (D-W) tPLH,tPHL Propagation delay time (ST-Y) tPLH,tPHL Propagation delay time (ST-W) tPLH,tPHL Propagation delay time (A, B, C-Y) tPLH,tPHL Propagation delay time (A, B, C-W) Note tPLH,tPHL Input capacitance CIN Power dissipation capacitance CPD (Note 1) VCC (V) Min Typ. Max Unit 2.0 30 75 ns 4.5 8 15 6.0 7 13 2.0 65 140 4.5 18 28 6.0 15 24 2.0 65 140 4.5 18 28 6.0 15 24 2.0 36 100 4.5 12 20 6.0 10 17 2.0 36 100 4.5 12 20 6.0 10 17 2.0 80 180 4.5 23 36 6.0 19 31 2.0 80 180 4.5 23 36 6.0 19 31 3 pF 15 pF ns ns ns ns ns ns Note 1: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation. ICC(opr) = CPD x VCC x fIN + ICC (c)2016 Toshiba Corporation 7 2016-08-04 Rev.3.0 74HC151D 12.6. AC Characteristics (Unless otherwise specified, CL = 50 pF, Ta = -40 to 85 , Input: tr = tf = 6 ns) Characteristics Output transition time Propagation delay time (D-Y) Symbol VCC (V) Min Max Unit tTLH,tTHL 2.0 95 ns 4.5 19 6.0 16 2.0 175 4.5 35 6.0 30 2.0 175 4.5 35 6.0 30 2.0 125 4.5 25 6.0 21 2.0 125 4.5 25 6.0 21 2.0 225 4.5 45 6.0 38 2.0 225 4.5 45 6.0 38 tPLH,tPHL Propagation delay time (D-W) tPLH,tPHL Propagation delay time (ST-Y) tPLH,tPHL Propagation delay time (ST-W) tPLH,tPHL Propagation delay time (A, B, C-Y) tPLH,tPHL Propagation delay time (A, B, C-W) tPLH,tPHL ns ns ns ns ns ns 12.7. AC Characteristics (Unless otherwise specified, CL = 50 pF, Ta = -40 to 125 , Input: tr = tf = 6 ns) Characteristics Output transition time Symbol VCC (V) Min Max Unit tTLH,tTHL 2.0 110 ns 4.5 22 6.0 19 2.0 210 4.5 42 6.0 36 2.0 210 4.5 42 6.0 36 2.0 150 4.5 30 6.0 26 2.0 150 4.5 30 6.5 26 2.0 270 4.5 54 6.5 46 2.0 270 4.5 54 6.0 46 Propagation delay time (D-Y) tPLH,tPHL Propagation delay time (D-W) tPLH,tPHL Propagation delay time (ST-Y) tPLH,tPHL Propagation delay time (ST-W) tPLH,tPHL Propagation delay time (A, B, C-Y) tPLH,tPHL Propagation delay time (A, B, C-W) tPLH,tPHL (c)2016 Toshiba Corporation 8 ns ns ns ns ns ns 2016-08-04 Rev.3.0 74HC151D Package Dimensions Unit: mm Weight: 0.15 g (typ.) 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