Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR RF TRANSISTOR BF115
TO-72
Metal Can Package
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL VALUE UNIT
Collector Base Voltage VCBO 50 V
Collector Emitter Voltage VCEO 30 V
Emitter Base Voltage VEBO 5V
Collector Current IC30 mA
Base Current Continuous IB1mA
Total Power Dissipation @ Ta=45ºC PD145 mW
Operating & Storage Junction Tj, Tstg -55 to +175 °C
Temperature Range
THERMAL RESISTANCE
Junction to Ambient Rth(j-a) 900 °C/W
ELECTRICAL CHARACTERISTICS (Ta=25º C unless specified otherwise )
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector Emitter Breakdown Voltage BVCEO*I
C=2mA, IB=0 30 V
Collector Base Breakdown Voltage BVCBO IC=10µA, IE=0 50 V
Emitter Base Breakdown Voltage BVEBO IE=10µA, IC=0 5V
Collector Cut off Current ICBO VCB=20V, IE=0, Ta=175ºC 0.5 µA
DC Current Gain hFE IC=1mA,VCE=10V 48 167
IC=20mA*,VCE= 2V 40
Base Emitter On Voltage VBE(on) IC=1mA,VCE=10V 600 700 740 mV
IC=20mA,VCE= 2V* 1000 mV
DYNAMIC CHARACTERISTICS
Transition Frequency fTIC=1.0mA, VCE=10V, f=100MHz 230 MHz
Feedback Capacitance Cre VCB=10V,IC=1mA,f=0.45MHz 0.65 0.8 pF
Noise Figure NF VCE=10V, IC=1mA, Rg=300KΩ,
f=200KHz 1.5 dB
f=1MHz 1.2 dB
Pulse Test: pulse Width <300
S, Duty Cycle<2%
VALUE
IS/ISO 9002
Lic#
SC/ L- 000019.2
Continental Device India Limited Data Sheet Page 1 of 3