© Semiconductor Components Industries, LLC, 2015
June, 2018 Rev. 2
1Publication Order Number:
ES1JFL/D
ES1JFL
Surface Mount Ultrafast
Rectifier
Features
Fast Switching Speed – Maximum Trr 35 ns
Ultra Thin Profile Maximum Height of 1.08 mm
Glass Passivated Junction
UL Flammability 94V0 Classification
MSL 1
Green Mold Compound
These Devices are PbFree, Halogen Free Free and are RoHS
Compliant
Specifications
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol Parameter Value Unit
VRRM Repetitive Peak Reverse Voltage 600 V
VRMS RMS Voltage 420 V
VDC DC Blocking Voltage 600 V
IF(AV) Average Forward Current at TL = 120°C1 A
IFSM Peak Forward Surge Current, 8.3 ms
Single Half SineWave at TL = 25°C
30 A
TJ, TSTG Operating and Storage Temperature
Range
55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SOD123F
CASE 425AD
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MARKING DIAGRAMS
&Y = Binary Calendar Year Coding Scheme
&Z = Assembly Plant Code
E1J = Specific Device Code
&G = Single Digit Weekly Data Code
Band Indicates Cathode
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Ultrafast Rectifier
12
Cathode Anode
&Y
&ZE1J&G
ES1JFL
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2
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Characteristic Value Unit
RqJA Typical Thermal Resistance, JunctiontoAmbient (Note 1) 200 °C/W
RqJC Typical Thermal Resistance, JunctiontoCase (Note 2) 30 °C/W
1. Mounted on an FR4 PCB, singlesided copper, mini pad.
2. Mounted on an FR4 PCB, singlesided copper, with 10 cm x 10 cm copper pad area.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Unit
VFForward Voltage IF = 1 A 1.7 V
IRReverse Current VR = 600 V 0.5 mA
VR = 600 V, TA = 100°C 10
CJCapacitance VR = 4 V, f = 1.0 MHz 7pF
Trr Reverse Recovery Time IF = 0.5 A, IR = 1 A, Irr = 0.25 A 22.55 35.00 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number Top Mark Package Shipping
ES1JFL E1J SOD123F
(PbFree/Halogen Free)
3000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
TYPICAL PERFORMANCE CHARACTERISTICS
ES1JFL
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3
100
10
1
0.1
0.01
20 40 60 80 100
VR = 600 V
0 120 140 160
1.0
.001
.01
.1
1.0
0.4 0.6 0.8
0
2.0
4.0
110
Reverse Voltage (V)
Capacitance (pF)
TJ, Junction Temperature (5C)
IR, Reverse Leakage Current (mA)
Figure 1. Typical Junction Capacitance
100
6.0
8.0
10
12
14
16
18 TJ = 25°C
f = 1.0 MHz
Vsig = 50 mVpp
0
0.2
0.4
0.6
0.8
1.0
0 25 50 75 100 125 150
Figure 2. Forward Current Derating Curve
TC, Case Temperature (5C)
IF
, Forward Current (A)
Instantaneous Forward Voltage (V)
Instantaneous Forward
Current (A)
Figure 3. Typical Forward Characteristics
1.2
Figure 4. Typical Leakage Current
vs. Junction Temperature
1.81.2 1.4 1.6
10 TJ = 25°C
SOD−123FL
CASE 425AD
ISSUE A DATE 04 AUG 201
7
SCALE 4:1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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1
© Semiconductor Components Industries, LLC, 2002
October, 2002 − Rev. 0 Case Outline Number:
XXX
DOCUMENT NUMBER:
STATUS:
NEW STANDARD:
DESCRIPTION:
98AON13725G
ON SEMICONDUCTOR STANDARD
SOD−123FL
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
PAGE 1 OF 2
DOCUMENT NUMBER:
98AON13725G
PAGE 2 OF 2
ISSUE REVISION DATE
ORELEASED FOR PRODUCTION FROM FAIRCHILD MA02B TO ON
SEMICONDUCTOR. REQ. BY B. NG. 31 AUG 2016
ACONVERTED TO ONSEMI FORMAT AND ADDED BACKSIDE FOOT LENGTH.
REQ. BY H. ALLEN. 04 AUG 2017
© Semiconductor Components Industries, LLC, 2017
August, 2017 − Rev. A Case Outline Number
:
425AD
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