MCP16301T-I/CHY - Microchip Technology

MCP16301

Features

• Up to 96% Typical Efficiency

• Input Voltage Range: 4.0V to 30V

• Output Voltage Range: 2.0V to 15V

• 2% Output Voltage Accuracy

• Integrated N-Channel Buck Switch: 460 mΩ

•600 mA Output Current

•500 kHz Fixed Frequen cy

• Adjustable Output Voltage

• Low Device Shutdown Current

• Peak Current Mo de Cont rol

• Intern al Com pen sation

• Stable with Ceramic Capacitors

• Internal Soft-Start

• Cycle by Cycle Peak Current Limit

• Under Voltage Lockout (UVLO): 3.5V

• Overtemperature Protection

• Available Package: SOT-23-6

Applications

•PIC

®/dsPIC Microcontroller Bias Supply

• 24V Industrial Input DC-DC Conversion

• Set-Top Boxes

• DSL Cable Modems

• Automotive

• Wall Cube Regulat ion

• SLA Battery Powered Devices

• AC-DC Digital Control Power Source

• Power Meters

•D

2 Package Linear Regulator Replacement

-See Figure 5-2

•Consumer

• Medical and Health Care

• Distributed Power Supplies

General Description

The MCP16301 is a highly integrated, high-efficiency,

fixed frequency, step-down DC-DC converter in a

popular 6-p in SOT -23 package that ope rates from input

voltage sources up to 30V. Integrated features include

a high side switch, fix ed freque ncy Pea k Current Mod e

Control, internal compensation, peak current limit and

overtemperature protection. Minimal external

components are necessary to develop a complete

step-down DC-DC converter power supply.

High co nverter ef fic ienc y is achiev ed by inte grating the

current limited, low resistance, high-speed N-Channel

MOSFET and associated drive circuitry. High

switching frequency minimizes the size of external

filtering components resulting in a small solution size.

The MCP16301 can supply 600 mA of continuous

current while re gulati ng the outpu t vol tag e fr om 2.0V to

15V. An integrated, high-performance peak current

mode architecture keeps the output voltage tightly

regulated, even during input voltage steps and output

current transient conditions that are common in power

systems.

The EN input is used to turn the device on and off.

While turned off, only a few micro amps of current are

consumed from the input for power shedding and load

distribution applications.

Output voltage is set with an external resistor divider.

The MCP16301 is offered in a space saving SOT-23-6

surface mount package.

Package Type

VIN

VFB

BOOST

GND

MCP16301

6-Lead SOT-23

High Voltage Input Integrated Switch Step-Down Regulator

MCP16301

Typical Applications

VIN

GND

VIN

6.0V To 30V

VOUT

5.0V @ 600 mA

COUT

2 X10 µF

CIN

10 µF

22 µH

BOOST

52.3 KΩ

10 KΩ

1N4148

40V

Schottky

Diode

CBOOST

100 nF

VIN

GND

VIN

4.5V To 30V

VOUT

3.3V @ 600 mA

COUT

2 X10 µF

CIN

10 µF

15 µH

BOOST

31.2 KΩ

10 KΩ

1N4148

40V

Schottky

Diode

CBOOST

100 nF

100

10 100 1000

IOUT (mA)

Efficiency (%)

VOUT = 5.0V

VOUT = 3.3V

VIN = 12V

MCP16301

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

VIN, SW............................... ................................-0.5V to 40 V

BOOST – GND .......... ............................ .............-0.5V to 46V

BOOST – SW Voltage........................................-0.5V to 6.0V

VFB Voltage........................................................-0.5V to 6.0V

EN Voltage.............................................-0.5V to (VIN + 0.3V)

Output Sh o rt Circuit Cur rent ................ ................ .Co ntinuo us

Power Dissi p a tion ............ ...... ...... ....... ...... ..Internally Limited

Storage Temperature ................................... -65°C to +150°C

Ambient Temperature with Power Applied..... -40°C to +85°C

Operating Junction Tempe rature.................. -40°C to +125°C

ESD Protection On All Pins:

HBM.................................................................3 kV

MM.................................................................200 V

† Notice: S tresses above those listed under “Maximum

Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of

the devi ce at those or any other c onditions ab ove those

indicated in the operational sections of this

specification is not intended. Exposure to maximum

rating conditions for extended periods may affect

device reliability.

DC CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VIN = VEN = 12V, VBOOST - VSW = 3.3V,

VOUT = 3.3V, IOUT = 100 mA, L = 15 µH, COUT = CIN = 2 X 10 µF X7R Ceramic Capacitors

Boldface specifications apply over the TA range of -40oC to +85oC.

Parameters Sym Min Typ Max Units Conditions

Input Voltage VIN —4.0 30 VNote 1

Feedbac k Volt age VFB 0.784 0.800 0.816 V

Output Voltage Adjust Range VOUT 2.0 —15.0 VNote 2

Feedbac k Volt age

Line Regulation (ΔVFB/VFB)/ΔVIN —0.01 0.1 %/V VIN = 12V to 30V;

Feedbac k Inpu t Bias C urren t IFB -250 ±10 +250 nA

Undervoltage Lockout Start UVLOSTRT —3.5 4.0 V VIN Rising

Undervoltage Lockout Stop UVLOSTOP 2.4 3.0 — V VIN Falling

Undervoltage Lockout

Hysteresis UVLOHYS —0.4 — V

Switching Frequency fSW 425 500 550 kHz IOUT = 200 mA

Maximu m Duty Cycle DCMAX 90 95 — % VIN = 5V; VFB = 0.7V;

IOUT = 100 mA

Minimu m Duty Cycl e DCMIN — 1 — %

NMOS Switch On Resistance RDS(ON) —0.46 —ΩVBOOST - VSW = 3.3V

NMOS Switch Current Limit IN(MAX) —1.3 — A VBOOST - VSW = 3.3V

Quiescent Current IQ— 2 7.5 mA VBOOST= 3.3V ; Note 3

Quiescent Current - Shutdown IQ— 7 10 µA VOUT = EN = 0V

Maximum Output Current IOUT 600 — — mA Note 1

EN Input Logic High VIH 1.4 — — V

EN Input Logic Low VIL — — 0.4 V

EN Input Leakage Current IENLK —0.05 1.0 µA VEN = 12V

Soft-Start Time tSS —150 —µS EN Low to High,

90% of VOUT

Note 1: The input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage

necessary for regulation. See characterization graphs for typical input to output operating voltage range.

2: For VIN < VOUT, VOUT will not remain in regulation.

3: VBOOST supply is derived from VOUT.

MCP16301

Thermal Sh utdown Die

Temperature TSD —150 —°C

Die Temperature Hysteresis TSDHYS —30 —°C

TEMPERATURE SPECIFICATIONS

Electrical Specifications:

Parameters Sym Min Typ Max Units Conditions

Temperature Ranges

Operati ng Junction Temperat ure Ra ng e TJ-40 —+125 °C Steady State

Storage Temperature Range TA-65 —+150 °C

Maximum Junct ion Temperature TJ— — +150 °C Transient

Package Thermal Resistances

Thermal Resistance, 6L-SOT-23 θJA —190.5 —°C/W EIA/JESD51-3 Standard

DC CHARACTERISTICS (CONTINUED)

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VIN = VEN = 12V, VBOOST - VSW = 3.3V,

VOUT = 3.3V, IOUT = 100 mA, L = 15 µH, COUT = CIN = 2 X 10 µF X7R Ceramic Capacitors

Boldface specifications apply over the TA range of -40oC to +85oC.

Parameters Sym Min Typ Max Units Conditions

Note 1: The input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage

necessary for regulation. See characterization graphs for typical input to output operating voltage range.

2: For VIN < VOUT, VOUT will not remain in regulation.

3: VBOOST supply is derived from VOUT.

MCP16301

2.0 TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 200 mA,

TA = +25°C.

FIGURE 2-1: 2.0V VOUT Efficiency vs.

IOUT.

FIGURE 2-2: 3.3V VOUT Efficiency vs.

IOUT.

FIGURE 2-3: 5.0V VOUT Efficiency vs.

IOUT.

FIGURE 2-4: 12V VOUT Efficiency vs.

IOUT.

FIGURE 2-5: 15V VOUT Efficiency vs.

IOUT.

FIGURE 2-6: Input Quiescent Current vs.

Temperature.

Note: The gra phs and table s pro vi ded follo w ing this note ar e a st a tis tic al sum ma ry ba sed on a limi ted nu mb er of

samples and are provided for informational purposes only. The performance characteristics listed herein

are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

0 100 200 300 400 500 600

IOUT(mA)

Efficiency (%)

IN = 30V

VIN = 12V

VIN = 6V

VOUT = 2.0V

100

0 100 200 300 400 500 600

IOUT (mA)

Efficiency (%)

VIN = 30V

VIN = 12V

VIN = 6V

VOUT = 3.3V

100

0 100 200 300 400 500 600

IOUT (mA)

Efficiency (%)

IN = 6V

IN = 30V

IN = 12V

VOUT = 5.0V

100

0 100 200 300 400 500 600

IOUT (mA)

Efficiency (%)

VIN = 30V

VIN = 24V

VIN = 16V

VOUT = 12.0V

100

0 100 200 300 400 500 600

IOUT (mA)

Efficiency (%)

VIN = 30V

VIN = 24V

VIN = 16V

VOUT = 15.0V

-40 -25 -10 5 20 35 50 65 80

Ambient Temperature (°C)

IQ (mA)

VIN = 30V

IN = 6V

VIN = 12V

VOUT = 3.3V

IOUT = 0 mA

MCP16301

Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 200 mA,

TA = +25°C.

FIGURE 2-7: Switching Frequency vs.

Temperature; VOUT = 3.3V.

FIGURE 2-8: Maximum Duty Cycle vs.

Ambient Temperature; VOUT = 5.0V.

FIGURE 2-9: Peak Current Lim it vs .

Temperature; VOUT = 3.3V.

FIGURE 2-10: Switch RDSON vs. VBOOST.

FIGURE 2-11: VFB vs. Temperature;

VOUT = 3.3V.

FIGURE 2-12: Under Voltage Lockout vs.

Temperature.

460

465

470

475

480

485

490

495

500

505

-40 -25 -10 5 20 35 50 65 80

Ambient Temperature (°C)

Switching Frequency (kHz)

VIN = 12V

IOUT = 200 mA

VOUT = 3.3V

95.45

95.5

95.55

95.6

95.65

95.7

95.75

95.8

95.85

-40 -25 -10 5 20 35 50 65 80

Ambient Temperature (°C)

Maximum Duty Cycle (%)

VIN = 5V

IOUT = 200 mA

600

800

1000

1200

1400

1600

-40 -25 -10 5 20 35 50 65 80

Ambient Temperature (°C)

Peak Current Limit (mA)

VIN = 12V

VIN = 30V

VIN = 6V

VOUT = 3.3V

420

430

440

450

460

470

480

490

500

510

33.544.55

Boost Voltage (V)

RDSON (mΩ)

TA = +25°C

VDS = 100 mV

0.796

0.797

0.798

0.799

0.800

0.801

0.802

-40 -25 -10 5 20 35 50 65 80

Ambient Temperature (°C)

VFB Voltage (V)

VOUT = 3.3V

VIN = 12V

IOUT = 100 mA

3.10

3.15

3.20

3.25

3.30

3.35

3.40

3.45

3.50

3.55

3.60

-40 -25 -10 5 20 35 50 65 80

Ambient Temperature (°C)

Voltage (V)

UVLO Start

UVLO Stop

MCP16301

Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 200 mA,

TA = +25°C.

FIGURE 2-13: EN Threshold Voltage vs.

Temperature.

FIGURE 2-14: Light Load Switchi ng

Waveforms.

FIGURE 2-15: Heavy Load Switching

Waveforms.

FIGURE 2-16: Typical Minimum Input

Voltage vs. Output Current.

FIGURE 2-17: Startup From Enable.

FIGURE 2-18: Startup From VIN.

0.40

0.45

0.50

0.55

0.60

0.65

0.70

0.75

-40 -25 -10 5 20 35 50 65 80

Ambient Temperature (°C)

Enable Threshold Voltage (V)

VIN = 12V

IOUT = 100 mA

VOUT = 3.3V

IOUT = 50 mA

VIN = 12V

VOUT

20 mV/DIV

AC coupled

VSW

5V/DIV

100 mA/DIV

1 µs/DIV

VOUT = 3.3V

IOUT = 600 mA

VIN = 12V

1 µs/DIV

VOUT =

20 mV/DIV

AC coupled

VSW =

5V/DIV

IL =

20 mA/DIV

3.20

3.50

3.80

4.10

4.40

4.70

5.00

1 10 100 1000

IOUT (mA)

Minimum Input Voltage (V)

To Start

To Run

VOUT = 3.3V

IOUT = 100 mA

VIN = 12V

VOUT

2V/DIV

100 µs/

VOUT

2V/DIV

100 µs/DIV

VEN

2V/DIV

VOUT = 3.3V

IOUT = 100 mA

VIN = 12V

VOUT

1V/DIV

VIN

5V/DIV

100 µs/DIV

MCP16301

Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 200 mA,

TA = +25°C.

FIGURE 2-19: Load Transient Response.

FIGURE 2-20: Line Transient Response.

VOUT = 3.3V

IOUT = 100 mA to 600 mA

VIN = 12V

VOUT

AC coupled

100 mV/DIV

IOUT

200 mA/DIV

100 µs/DIV

VOUT = 3.3V

IOUT = 100 mA

VIN = 8V to 12V Step

VOUT

AC coupled

100 mV/DIV

VIN

1V/DIV

10 µs/DIV

MCP16301

3.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 3-1.

3.1 Boost Pin (BOOST)

The high side of the floating supply used to turn the

integrated N-Channel MOSFET on and off is

connec ted to the boost pin .

3.2 Ground Pin (GND)

The ground or return pin is used for circuit ground

connection. The length of the trace from the input cap

return, output cap return and GND pin should be made

as short as possible to minimize the noise on the GND

pin.

3.3 Feedback Voltage Pin (VFB)

The VFB pin is used to provide output voltage regulation

by using a resistor divider. The VFB voltage will be

0.800V typical with the output voltage in regulation.

3.4 Enable Pin (EN)

The EN pin is a logic-level input used to enable or

disable the device switching, and lower the quiescent

current whi le disa bled. A lo gic hig h (> 1.4V) wil l enabl e

the r egulator outp ut. A logic low (<0.4V) wi ll ensure th at

the regulator is disabled.

3.5 Power Supply Input Voltage Pin

(VIN)

Connect the input voltage source to VIN. The input

source should be decoupled to GND with a

4.7 µF - 20 µF capacitor, depending on the impedance

of the source and output current. The input capacitor

provides AC current for the power switch and a stable

voltage source for the internal device power. This

capacitor should be connected as close as possible to

the VIN and GND pins. For lighter load applications, a

1 µF X7R or X5R ceramic capacitor can be used.

3.6 Switch Pin (SW)

The switch node pin is connected internally to the

N-channel switch, and externally to the SW node

consisting of the inductor and Schottky diode. The SW

node ca n rise very fast a s a re sult o f the i nternal switc h

turning on. The external Schottky diode should be

connected close to the SW node and GND.

TABLE 3-1: PIN FUNCTION TABLE

MCP16301

SOT-23 Symbol Description

1BOOST Boost voltage that drives the internal NMOS control switch. A bootstrap capacitor is

connected between the BOOST and SW pins.

2GND Ground Pin

3 VFB Output voltage feedback pin. Connect VFB to an external resistor divider to set the

output voltage.

4EN Enable pin. Logic high enables the operation. Do not allow this pin to float.

5 VIN Input supply voltage pin for power and internal biasing.

6SW Output switch node, connects to the inductor, freewheeling diode and the bootstrap

capacitor.

MCP16301

NOTES:

MCP16301

4.0 DETAILED DESCRIPTION

4.1 Device Overview

The MCP16301 is a high input voltage step-down

regulator, capable of supplying 600 mA to a regulated

output v oltage from 2.0V to 15 V. Internally, the trimmed

500 kHz oscillato r provide s a fixed freq uency, while the

Peak Current Mode Contro l architecture varies the duty

cycle for output voltage regulation. An internal floating

driver is used to turn the high side integrated

N-Channel MOSFET on and off. The power for this

driver is derived from an external boost capacitor

whose energy is supplied from a fixed voltage ranging

between 3.0V and 5.5V, typically the input or output

volt age of the converter. For app lications with an outp ut

voltage outside of this range, 12V for example, the

boost capacitor bias can be derived from the output

using a simple Zener diode regulator.

4.1.1 INTERNAL REFERENCE VOLTAGE

VREF

An integ rated prec ise 0.8 V reference combined with an

external res is tor d ivi de r sets the de sired conve r ter o ut-

put volt age. The resis tor divider ran ge can vary witho ut

affect ing the c ontrol sy stem gai n. High-v alue res istors

consume less current, but are more susceptible to

noise.

4.1.2 INTERNAL COMPENSATION

All control system components necessary for stable

operation over the entire device operating range are

integrated, including the error amplifier and inductor

current s lope comp ensation . To add the prop er amount

of slope compensation, the inductor value changes

along with the output voltage (see Table 5-1).

4.1.3 EXTERN AL COMP ONE NTS

External components consist of:

• input capacitor

• output filter (Inductor and Capacitor)

• freewheeling diode

• boost capacitor

• boost blocking diode

• resistor divider.

The sel ection of the extern al ind uctor, output cap acito r,

input capacitor and freewheeling diode is dependent

upon the output voltage and the maximum output

current.

4.1.4 ENABLE INPUT

Enable input, (EN), is used to enable and disable the

devi ce. If disabled, the MCP16301 device co nsumes a

minimal current from the input. Once enabled, the

internal soft start controls the ou tput voltage rate of rise,

preventing high-inrush current and output voltage

overshoot.

4.1.5 SOFT START

The internal reference voltage rate of rise is controlled

during s tartup, m inimizing the output volt age overs hoot

and the inrush current.

4.1.6 UNDER VOLTAGE LOCKOUT

An integrated Under Voltage Lockout (UVLO) prevents

the con verter from st arting until the input v oltage i s high

enough for normal operation. The converter will typi-

cally start at 3.5V and opera te down to 3 .0V. Hystere sis

is added to prevent starting and stopping during

startup, as a result of loading the input voltage source.

4.1.7 OVERTEMPERATURE

PROTECTION

Overtemperature protection limits the silicon die

temperature to 150°C by turning the converter off. The

normal switc hi ng res um es at 120°C.

MCP16301

FIGURE 4-1: MCP16301 Bl oc k Diag ra m.

4.2 Functional Description

4.2.1 STEP-DOWN OR BUCK

CONVERTER

The MCP16301 is a non-synchronous, step-down or

buck converter capable of stepping input voltages

ranging from 4V to 30V down to 2.0V to 15V for

VIN > VOUT.

The integrated high-side switch is used to chop or

modula te the input volt age using a co ntrolled duty cy cle

for output voltage regulation. High efficiency is

achiev ed by us in g a l ow re si st ance sw itc h, lo w forwa r d

drop diode, low equivalent series resistance (ESR),

inducto r an d cap aci tor. When the swit ch is turned on, a

DC voltage is applied to the inductor (VIN - VOUT),

resulting in a positive linear ramp of inductor current.

When the switch turns off, the applied inductor voltage

is equal to -VOUT, resultin g in a neg ati ve line ar ramp of

inductor current (ignoring the forward drop of the

Schottky diode).

For steady-state, continuous inductor current

operation, the positive inductor current ramp must

equal the negative current ramp in magnitude. While

opera ting in steady st ate, the switch duty c ycle mus t be

equal to the relationship of VOUT/VIN for constant

output voltage regulation, under the condition that the

inductor current is continuous, or never reaches zero.

For discontinuous inductor current operation, the

steady-state duty cycle will be less than VOUT/VIN to

maintain voltage regulation. The average of the

chopped input voltage or SW node voltage is equal to

the output voltage, while the average of the inductor

current is equal to the output current.

FIGURE 4-2: Step-Down Converter.

Schottky

Diode COUT

CBOOST

Slope

Comp

PWM

Latch

Overtemp

Precharge R

Comp

Amp

CCOMP

RCOMP

Drive

VREG

REF

VREF OTEMP

Boost

Pre

Charge

500 kHz OSC

VOUT

RSENSE

GND

Boost Diode

VIN

RTOP

RBOT

BOOST

GND

VREF

SHDN all blocks

CIN

Schottky

Diode C

OUT

SW on off on on

off

OUT

SW on off on on

off

OUT

Continuo us Induct or Current Mo de

Discontinu ous Inductor Current M ode

MCP16301

4.2.2 PEAK CURRENT MODE CONTROL

The MCP16301 integrates a Peak Current Mode

Control arc hitecture, result ing in superior AC reg ulation

while minimizing the number of voltage loop

compensation components, and their size, for

integration. Peak Current Mode Control takes a small

portion of the inductor current, replicates it and

compares this replicated current sense signal with the

output of the integrated error voltage. In practice, the

inductor current and the internal switch current are

equal during the switch-on time. By adding this peak

current sense to the system control, the step-down

power tra in sys tem is redu ce d fro m a 2nd order to a 1st

order. This reduces the system complexity and

increases its dynamic performance.

For Pulse-Width Modulation (PWM) duty cycles that

exceed 50%, the control system can become bimodal

where a wide pulse followed by a short pulse repeats

instead of the desire d f ixed p ulse width . To p revent this

mode of operation, an internal compensating ramp is

summed into the current shown in Figure 4-1.

4.2.3 PULSE-WIDTH MODULATION

(PWM)

The internal oscillator periodically starts the switching

period, which in MCP16301’s case occurs every 2 µs

or 500 kHz. With the integrated switch turned on, the

inductor current ramps up until the sum of the current

sense and s lope c ompe nsatio n ramp e xceed s the inte-

grated erro r am pl ifi er ou tpu t. Th e e rror a mp lifi er o utp ut

slews up or down to increase or decrease the inductor

peak cur rent fe eding i nto the out put LC filte r. If the reg-

ulated o utput vo lt age i s lower t han it s t arget, t he inve rt-

ing error amplifier output rises. This results in an

increase in the inductor current to correct for errors in

the output voltage. The fixed frequency duty cycle is

terminated when the sensed inductor peak current,

summed with the internal slope compensation,

exceeds the output voltage of the error amplifier. The

PWM latch is set by turning off the internal switch and

preventing it from turning on until the beginning of the

next cycle. An overtemperature signal, or boost cap

undervoltage, can also reset the PWM latch to asyn-

chronously terminate the cycle.

4.2.4 HIGH SIDE DRIVE

The MCP16301 features an integrated high-side

N-Channel MOSFET for high efficiency step-down

power conversion. An N-Channel MOSFET is used for

its low resistance and size (instead of a P-Channel

MOSFET). The N-Channel MOSFET gate must be

driven above its source to fully turn on the transistor. A

gate-drive voltage above the input is necessary to turn

on the hig h side N-Channel. The high side drive voltage

should be between 3.0V and 5.5V. The N-Channel

source is conne cted to the inductor an d Schottky diode,

or switc h node. When the switc h is off, the in ductor cur-

rent flow s th rou gh th e Sc hott ky dio de, prov id ing a pa th

to recharge the boost cap from the boost voltage

source, typically th e output v oltage fo r 3.0V to 5.0 V out-

put appl icat ions. A bo ost-bl ockin g diod e is us ed to p re-

vent current flow from the boost cap back into the

output during the internal switch-on time. Prior to

startup, the boost cap ha s no stored ch arge to drive the

switch. An internal re gulator is us ed to “pre-c harge” the

boost cap. Once pre-charged, the switch is turned on

and the inductor current flows. When the switch turns

off, the inductor current free-wheels through the

Schottky diode, providing a path to recharge the boost

cap. Worst case conditions for recharge occur when

the switch turns on for a very short duty cycle at light

load, limiting the inductor current ramp. In this case,

ther e is a smal l amo unt of tim e fo r the b oos t capac ito r

to recharge. For high input voltages there is enough

pre-charg e current to replace the boost cap charge. For

input voltages above 5.5V typical, the MCP16301

device will regulate the output voltage with no load.

After starting, the MCP16301 will regulate the output

volt age until t he input volt age decrease s below 4V. See

Figure 2-16 for device range of operation over input

voltage, output voltage and load.

4.2.5 ALTERNATIVE BOOST BIAS

For 3.0V to 5.0V output voltage applications, the boost

supply is typically the output voltage. For applications

with 3.0V < VOUT < 5.0V, an alternative boost supply

can be used.

Alternative boost supplies can be from the input, input

derived, output derived or an auxiliary system voltage.

For low voltage output applications with unregulated

input voltage, a shunt regulator derived from the input

can be used to derive the boost supply. For

applications with high output voltage or regulated high

input voltage, a series regulator can be used to derive

the boost supply.

MCP16301

FIGURE 4-3: Shunt and External Boost Supply.

Shunt Boost Supply Regulation is used for low output

volt age converte rs op era tin g from a w i de ra ngi ng inp ut

source. A regulated 3.0V to 5.5V supply is needed to

provide high side-drive bias. The shunt uses a Zener

diode to clamp the voltage within the 3.0V to 5.5V

range using the resistance shown in Figure 4-3.

To calculate the shunt resistance, the boost drive

current can be estimated using Equation 4-1.

IBOOST_TYP for 3.3V Boost Supply = 0.6 mA

IBOOST_TYP for 5.0V Boost Supply = 0.8 mA.

EQUATION 4-1: BOOST CURRENT

OUT

BOOST

GND

TOP

Boost Diode

FW Diode

12V

VZ = 5.1V

OUT

BOOST

GND

TOP

BOT

Boost Diode

FW Diode

12V

3.0V to 5.5 V E xt ernal Supply

BOT

MCP16301

IBOOST IBOOST_TYP 1.5

mA=

MCP16301

To calcul ate the shun t resistance , the maximum IBOOST

and IZ current are used at the minimum input voltage

(Equation 4-2).

EQUATION 4-2: SHUNT RESISTANCE

VZ and IZ can be found on the Zener diode

manufacturer’s data sheet. Typical IZ = 1 mA.

FIGURE 4-4: Series Regulator Boost Supply.

Series reg ulator app lication s use a Zener d iode to dro p

the excess voltage. The series regulator bias source

can be input or output voltage derived, as shown in

Figure 4-4. The boost supply must remain between

3.0V and 5.5V at all times for proper circuit operation.

RSH VINMIN VZ

–

IBoost IZ

------------------------------=

VOUT

VIN

CIN

COUT

BOOST

GND

RTOP

RBOT

VIN

Boost Diode

FW Diode

12V

15V to 30V

VIN

CIN

BOOST

GND

VIN

Boost Diode

FW Diode

12V

VZ = 7.5V

VOUT

RTOP

RBOT

COUT

MCP16301

NOTES:

MCP16301

5.0 APPLICATION INFORMATION

5.1 Typical Applications

The MCP16301 step-down converter operates over a

wide input voltage range, up to 30V maximum. Ty pical

applications include generating a bias or VDD voltage

for the PIC® microcontrollers product line, digital con-

trol system bias supply for AC-DC converters, 24V

industrial input and similar applications.

5.2 Adjustable Output Voltage

Calculations

To calculate the resistor divider values for the

MCP16301, Equation 5-1 can be used. RTOP is con-

nected to VOUT, RBOT is connected to GND and both

are connected to the VFB input pin.

EQUATION 5-1:

EXAMPLE 5-1:

EXAMPLE 5-2:

The trans co ndu ctanc e e rror a mp lifi er g ain is co ntro lle d

by it s internal impedance. The external divider re sistors

have no effect on system gain, so a wide range of

values can be used. A 10 kΩ resistor is recommended

as a good trade-off for quiescent current and noise

immunity.

5.3 General Design Equations

The step down converter duty cycle can be estimated

using Equation 5-2, while operating in Continuous

Inductor Current Mode. This equation also counts the

forward drop of the freewheeling diode and internal

N-Channel MOSFET switch voltage drop. As the load

current increases, the switch voltage drop and diode

voltage drop increase, requiring a larger PWM duty

cycle to maintain the output voltage regulation. Switch

voltage drop is estimated by multiplying the switch

current time s the sw it ch res is t anc e or RDSON.

EQUATION 5-2: CONTINUOUS INDUCTOR

CURRENT DUTY CYCLE

The MCP16301 device features an integrated slope

compensation to prevent the bimodal operation of the

PWM duty cycle. Internally, half of the inductor current

down slope is summed with the internal current sense

signal. For the proper amount of slope compensation,

it is recommended to keep the inductor down-slope

curr ent con stant by varyin g the ind uctance with VOUT,

where K = 0.22V/µH.

EQUATION 5-3:

For VOUT = 3.3V, an inductance of 15 µH is

recommended.

RTOP RBOT VOUT

VFB

-------------1–

⎝⎠

⎛⎞

VOUT =3.3V

VFB =0.8V

RBOT =10 kΩ

RTOP = 31.25 kΩ (S tand ard Value = 31.2 kΩ)

VOUT =3.3V

VOUT =5.0V

VFB =0.8V

RBOT =10 kΩ

RTOP = 52.5 kΩ (Standard Value = 52.3 kΩ)

VOUT =4.98V

TABLE 5-1: RECOMMENDED INDUCTOR

VALUES

VOUT K LSTANDARD

2.0V 0.20 10 µH

3.3V 0.22 15 µH

5.0V 0.23 22 µH

12V 0.21 56 µH

15V 0.22 68 µH

DVOUT VDiode

+()

VIN ISW RDSON

()–()

-------------------------------------------------------=

OUT L

⁄

MCP16301

5.4 Input Capacitor Selection

The step -dow n co nve rter i nput cap a cit or mus t fil ter the

high input ripple current, as a result of pulsing or

chopping the input voltage. The MCP16301 input

volt age pin is us ed to suppl y volta ge for the power trai n

and as a source for internal bias. A low equivalent

series resistance (ESR), preferably a ceramic

capacitor, is recommended. The necessary

capacitance is dependent upon the maximum load

current and source impedance. Three capacitor

parameters to keep in mind are the voltage rating,

equivalent series resistance and the temperature

rating. For wide temperature range applications, a

multi-layer X7R dielectric is recommended, while for

applications with limited temperature range, a multi-

layer X5R dielectric is acceptable. Typically, input

capacitance between 4.7 µF and 10 µF is sufficient for

most applications. For applications with 100 mA to

200 mA load, a 1 µF X7R capacitor can be used,

depending on the input source and its impedance.

The inpu t capacitor vo ltage rating should be a minimum

of VIN plus margin. Table 5-2 contains the

recommended range for the input capacitor value.

5.5 Output Capacitor Selection

The output capacitor helps in providing a stable output

volt age durin g sudden load t ransient s, and r educes th e

outp ut vol tage r ippl e. As w ith t he in put c apacito r, X5R

and X7R ceramic capacitors are well suited for this

application.

The MCP16301 is internally compensated, so the

output capacitance range is limited. See Table 5-2 for

the recommended output capacitor range.

The amo un t an d t ype of output c ap a ci t ance and eq ui v-

alent seri es res istance w ill h ave a si gnific ant eff ect on

the output ripple voltage and system stability. The

range of the output capacitance is limited due to the

integrat ed compensation of the MCP16301.

The outpu t voltag e capac itor volt age rating should be a

minimum of VOUT, plus margin.

Table 5-2 contains the recommended range for the

input and output capacitor value:

5.6 Inductor Selection

The MCP16301 is designed to be used with small sur-

face mount in duc to rs. Sev eral s pec ifi ca tions sh oul d b e

considered prior to selecting an inductor. To optimize

system performance, the inductance value is deter-

mined by the outpu t v ol tage ( Table 5-1) so the ind uctor

ripple current is somewhat constant over the output

voltage range.

EQUATION 5-4: INDUCTOR RIPPLE

CURRENT

EXAMPLE 5-3:

EQUATION 5-5: INDUCTOR PEAK

CURRENT

An inductor saturation rating minimum of 760 mA is

recommended. Low ESR inductors result in higher

system efficiency. A trade-off between size, cost and

efficiency is made to achieve the desired results.

TABLE 5-2: CAPACITOR VALUE RANGE

Parameter Min Max

CIN 2.2 µF none

COUT 20 µF none

------t

VIN =12V

VOUT =3.3V

IOUT =600 mA

ILPK

-------- I OUT

Inductor ripple current = 319 mA

Inductor peak current = 760 mA

MCP16301

5.7 Freewheeling Diode

The freew heel ing d iode creates a p ath for in ductor c ur-

rent flow after the internal switch is turned of f. The aver-

age diode current is dependent upon output load

current at duty cycle (D). The efficiency of the converter

is a function of the forward dr op and speed of the free-

wheeling diode. A low forward drop Schottky diode is

recomm end ed. Th e current ra tin g a nd v oltage ra tin g of

the diode is application dependent. The diode voltage

rating should be a minimum of VIN, plus margin. For

example, a diode rating of 40V should be used for an

application with a maximum input of 30V. The average

diode curren t can be cal cu lat ed usi ng Equation 5-6.

EQUATION 5-6: DIODE AVERAGE

CURRENT

EXAMPLE 5-4:

A 0.5A to 1A diode is recommen ded.

5.8 Boost Diode

The boost diode is used to provide a charging p ath from

the low voltage gate drive source, while the switch

node is low. The boo st diod e blo ck s the h igh v oltag e of

the switch node from feeding back into the output volt-

age when the switch is turned on, forcing the switch

node high.

A standard 1N4148 ultra-fast diode is recommended

for its rec ov ery spee d, hig h vo lt age blockin g capability,

availa bility and cost. The v olt age ra ting re quired for th e

boost diode is VIN.

For low boost voltage applications, a small Schottky

diode with the appropriately rated voltage can be used

to lower the forward drop, increasing the boost supply

for gate drive.

TABLE 5-3: MCP16301 RECOMMENDED

3.3V INDUCTORS

Part Number

Value

(µH)

DCR (Ω)

ISAT (A)

Size

WxLxH

(mm)

Coilcraft®

ME3220 15 0.52 0.90 3.2x2.521.0

LPS4414 15 0.440 0.92 4.3x4.3x1.4

LPS6235 15 0.125 2.00 6.0x6.0x3.5

MSS6132 15 0.135 1.56 6.1x6.1x3.2

MSS7341 15 0.057 1.78 7.3x7.3x4.1

ME3220 15 0.520 0.8 2.8x3.2x2.0

XFL2006 15 2.02 0.25 2.0x2.0x0.6

LPS3015 15 0.700 0.61 3.0x3.0x1.4

Wurth Elektronik®

744028 15 0.750 0.35 2.8x2.8x1.1

744029 15 0.600 0.42 2.8x2.8x1.35

744025 15 0.400 0.900 2.8x2.8x2.8

744031 15 0.255 0.450 3.8x3.8x1.65

744042 15 0.175 0.75 4.8x4.8x1.8

Coiltronics®

SD12 15 0.48 0.692 5.2x5.2x1.2

SD18 15 0.266 0.831 5.2x5.2x1.8

SD20 15 0.193 0.718 5.2x5.2x2.0

SD3118 15 0.51 0.75 3.2x3.2x1.8

SD52 15 0.189 0.88 5.2x5.5.2.0

Sumida®

CDPH4D19F 15 0.075 0.66 5.2x5.2x2.0

CDRH2D09C 15 0.52 0.24 3.2x3.2x1.0

CDRH2D162D 15 0.198 0.35 3.2x3.2x1.8

CDRH3D161H 15 0.328 0.65 4.0x4.0x1.8

TDK - EPC®

VLF3012A 15 0.54 0.41 2.8x2.6x1.2

VLF30251 15 0.5 0.47 2.5x3.0x1.2

VLF4012A 15 0.46 0.63 3.5x3.7x1.2

VLF5014A 15 0.28 0.97 4.5x4.7x1.4

B82462G4332M 15 0.097 1.05 6x6x2.2

TABLE 5-4: FREEWHEELING DIODES

App Manufacturer Part

Number Rating

12 VIN

600 mA Diodes

Inc. DFLS120L-7 20V, 1A

24 VIN

100 mA Diodes

Inc. B0540Ws-7 40V, 0.5A

18 VIN

600 mA Diodes

Inc. B130L-13-F 30V, 1A

ID1AVG 1D–()IOUT

IOUT =0.5A

VIN =15V

VOUT =5V

D=5/15

ID1AVG =333 mA

MCP16301

5.9 Boost Capacitor

The boost capacitor is used to supply current for the

internal high side drive circuitry that is above the input

volt age. The boost capacitor must store enough energy

to completely drive the high side switch on and off. A

0.1 µF X5R or X7R capacitor is recommended for all

appli cations. The boost capacitor maximum v oltage is

5.5V, so a 6.3V or 10V rated capacitor is recom-

mended.

5.10 Thermal Calculations

The MCP16301 is available in a SOT -23-6 package. By

calculating the power dissipation and applying the

package thermal resistance (θJA), the junction temper-

ature is estimated. The maximum continuous junction

temperature rating for the MCP16301 is +125°C.

To quickly estimate the internal power dissipation for

the switching step-down regulator, an empirical calcu-

lation using measured efficiency can be used. Given

the measured efficiency, the internal power dissipation

is estimated by Equation 5-7. This power dissipation

includes all internal and external component losses.

For a quick internal estimate, subtract the estimated

Schottky diode loss and inductor ESR loss from the

PDIS calculation in Equation 5-7.

EQUATION 5-7: TOTAL POWER

DISSIPATION ESTIMATE

The differe nc e b etwe en the first term , i npu t p ower, and

the second term, power delivered, is the total system

power dissipation. The freewheeling Schottky diode

losses are determined by calculating the average diode

current and multiplying by the diode forward drop. The

inductor losses are estimated by PL = IOUT2 x LESR.

EQUATION 5-8: DIODE POWER

DISSIPATION ESTIMATE

EXAMPLE 5-5:

5.11 PCB Layout Information

Good printed circuit board layout techniques are

important to any switching circuitry, and switching

power supplies are no different. When wiring the

switching high-current paths, short and wide traces

should b e used. Th erefore, it is import ant th at the inp ut

and outp ut capaci tors be place d as close as p ossible to

the MCP16301 to minimize the loop area.

The feedback resistors and feedback signal should be

routed aw ay from the switchi ng node and the sw itching

current l oop. W hen po ssib le, gro und pl anes and tra ces

should be used to help shield the feedback signal and

minimize noise and magnetic interference.

A good MCP16301 layout starts with CIN placement.

CIN suppl ies cu rrent to the input of th e cir cui t w hen the

switch is turned on. In addition to supplying high-

frequency switch current, CIN also provides a stable

voltage source for the internal MCP16301 circuitry.

Unstable PWM operation can result if there are

excessive transients or ringing on the VIN pin of the

MCP163 01 device . In Figure 5-1, CIN is placed close to

pin 5. A ground plane on the bottom of the board

provides a low resistive and inductive path for the

return current. The next priority in placement is the

freewheeling current loop formed by D1, COUT and L,

while strategically placing COUT return close to CIN

return. Next, CB and DB sh oul d be pl ace d between the

boost pin and the switch node pin SW. This leaves

space close to the MCP16301 VFB pin to place RTOP

and RBOT. RTOP and RBOT are routed away from the

Switch node so noise is not coupled into the high-

impedance VFB input.

VOUT IOUT

Efficiency

-------------------------------

⎝⎠

⎛⎞

VOUT IOUT

()–PDis

PDiode VF1D–()IOUT

()

VIN =10V

VOUT =5.0V

IOUT =0.4A

Efficiency = 90%

Total System Dissipation = 222 mW

LESR =0.15Ω

PL=24 mW

Diode VF = 0 .50

D=50%

PDiode =125 mW

MCP1 6301 internal power dissipati on est imate:

PDIS - PL - PDIODE = 73 mW

θJA =198°C/W

Estimated Junction

Temperature Rise =+14.5°C

MCP16301

FIGURE 5-1: MCP16301 SO T-23-6 Recommen ded Lay out , 600 mA Design.

Bottom Plane is GND

RBOT RTOP 10 Ohm

VOUT

VIN

2xC

REN

CBDB

GND

COUT

Bottom Trace

MCP16301

VIN COUT

BOOST

GND

3.3V

4V to 30V 10 Ohm

REN

VOUT

RTOP

RBOT

VIN

CIN

MCP16301

Component Value

CIN 10 µF

COUT 2 x 10 µF

L 15 µH

RTOP 31.2 kΩ

RBOT 10 kΩ

D1 B140

DB1N4148

CB100 nF *Note: 10 Ohm resistor is used with network analyzer, to measure

system gain and phase.

MCP16301

FIGURE 5-2: MCP16301 SO T-23-6 D2 Recommended Layout, 200 mA Design.

GND

Bottom Plane is GND

REN

COUT

VIN

GND

VOUT

GND

RTOP

RBOT

CIN

MCP16301

CBVOUT

VIN COUT

BOOST

GND

RTOP

VIN

3.3V

4V to 30V

REN

Component Value

CIN 1 µF

COUT 10 µF

L15 µH

RTOP 31.2 kΩ

RBOT 10 kΩ

D1 PD3S130

CB100 nF

REN 1 MΩ

MCP16301

RBOT

CIN

MCP16301

6.0 TYPICAL APPLICATION CIRCUITS

FIGURE 6-1: Typical Application 30V VIN to 3.3V VOUT.

Component Value Manufacturer Part Number Comment

CIN 2 x 4.7 µF Taiyo Yuden®UMK325B7475KM-T CAP 4.7µF 50V CERAMIC X7R 1210 10%

COUT 2 x 10 µF Taiyo Yuden JMK212B7106KG-T CAP 10µF 6.3V CERAMIC X7R 0805 10%

L 15 µH Coilcraft®MSS6132-153ML MSS6132 15µH Shielded Power Inductor

RTOP 31.2 kΩPanasonic®-ECG ERJ-3EKF3162V RES 31.6K OHM 1/10W 1% 0603 SMD

RBOT 10 kΩPanasonic-ECG ERJ-3EKF1002V RES 10.0K OHM 1/10W 1% 0603 SMD

FW Diode B140 Diodes® Inc. B140-13-F DIODE SCHOTTKY 40V 1A SMA

Boost Diode 1N4148 Diodes Inc. 1N4448WS-7-F DIODE SWITCH 75V 200MW SOD-323

CB100 nF AVX® Corporation 0603YC104KAT2A CAP 0.1µF 16V CERAMIC X7R 0603 10%

VOUT

VIN

CIN

COUT

BOOST

GND

VIN

Boost Diode

FW Diode

3.3V

6V to 30V

RTOP

RBOT

MCP16301

FIGURE 6-2: Typical Application 15V – 30V Input; 12V Output.

BOOST

GND

Boost Diode

FW Diode

12V

15V to 30V

Component Value Manufacturer Part Number Comment

CIN 2 x 4.7 µF Taiyo Yuden UMK325B7475KM-T CAP 4.7uF 50V CERAMIC X7R 1210 10%

COUT 2 x 10 µF Taiyo Yuden JMK212B7106KG-T CAP CER 10µF 25V X7R 10% 1206

L 56 µH Coilcraft MSS6132-153ML MSS7341 56µH Shielded Power Inductor

RTOP 140 kΩPanasonic-ECG ERJ-3EKF3162V RES 140K OHM 1/10W 1% 0603 SMD

RBOT 10 kΩPanasonic-ECG ERJ-3EKF1002V RES 10.0K OHM 1/10W 1% 0603 SMD

FW Diode B140 Diodes Inc. B140-13-F DIODE SCHOTTKY 40V 1A SMA

Boost Diode 1N4148 Diodes Inc. 1N4448WS-7-F DIODE SWITCH 75V 200MW SOD-323

CB100 nF AVX Corporation 0603YC104KAT2A CAP 0.1µF 16V CERAMIC X7R 0603 10%

DZ7.5V Zener Diodes Inc. MMSZ5236BS-7-F DIODE ZENER 7.5V 200MW SOD-323

MCP16301

VOUT

VIN COUT

RTOP

RBOT

VIN

CIN

MCP16301

FIGURE 6-3: Typical Application 12V Input; 2V Output at 600 mA.

BOOST

GND

VIN

Boost Diode

FW Diode

12V

RTOP

VOUT

COUT

CIN

VIN

RBOT

Component Value Manufacturer Part Number Comment

CIN 10 µF Taiyo Yuden EMK316B7106KL-TD CAP CER 10µF 16V X7R 10% 1206

COUT 22 µF Taiyo Yuden JMK316B7226ML-T CAP CER 22µF 6.3V X7R 1206

L 10 µH Coilcraft MSS4020-103ML 10 µH Shielded Power Inductor

RTOP 15 kΩPanasonic-ECG ERJ-3EKF1502V RES 15.0K OHM 1/10W 1% 0603 SMD

RBOT 10 kΩPanasonic-ECG ERJ-3EKF1002V RES 10.0K OHM 1/10W 1% 0603 SMD

FW Diode PD3S Diodes Inc. PD3S120L-7 DIODE SCHOTTKY 1A 20V POWERDI323

Boost Diode 1N4148 Diodes Inc. 1N4448WS-7-F DIODE SWITCH 75V 200MW SOD-323

CB100 nF AVX Corporation 0603YC104KAT2A CAP 0.1uF 16V CERAMIC X7R 0603 10%

DZ7.5V Zener Diodes Inc. MMSZ5236BS-7-F DIODE ZENER 7.5V 200MW SOD-323

MCP16301

FIGURE 6-4: Typical Application 10V to 16V VIN to 2.5V VOUT.

BOOST

GND

Boost Diode

FW Diode

2.5V

10V to 16V

MCP16301

RBOT

RTOP

VOUT

VIN

CIN

VIN COUT

Component Value Manufacturer Part Number Comment

CIN 10 µF Taiyo Yuden TMK316B7106KL-TD CAP CER 10 µF 25V X7R 10% 1206

COUT 22 µF Taiyo Yuden JMK316B7226ML-T CAP CER 22 µF 6.3V X7R 1206

L 12 µH Coilcraft LPS4414-123MLB LPS4414 12 uH Shielded Power Inductor

RTOP 21.5 kΩPanasonic-ECG ERJ-3EKF2152V RES 21.5K OHM 1/10W 1% 0603 SMD

RBOT 10 kΩPanasonic-ECG ERJ-3EKF1002V RES 10.0K OHM 1/10W 1% 0603 SMD

FW Diode DFLS120 Diodes Inc. DFLS120L-7 DIODE SCHOTTKY 20V 1A POWERDI123

Boost Diode 1N4148 Diodes Inc. 1N4448WS-7-F DIODE SWITCH 75V 200MW SOD-323

CB100 nF AVX Corporation 0603YC104KAT2A CAP 0.1uF 16V CERAMIC X7R 0603 10%

DZ7.5V Zener Diodes Inc. MMSZ5236BS-7-F DIODE ZENER 7.5V 200MW SOD-323

CZ1 µF Taiyo Yuden LMK107B7105KA-T CAP CER 1.0UF 10V X7R 0603

RZ1 kΩPanasonic-ECG ERJ-8ENF1001V RES 1.00K OHM 1/4W 1% 1206 SMD

MCP16301

FIGURE 6-5: Typical Application 4V to 30V VIN to 3.3V VOUT at 150 mA.

BOOST

GND

VIN

Boost Diode

FW Diode

3.3V

4V to 30V

REN

CIN RTOP

VOUT

VIN COUT

RBOT

MCP16301

Component Value Manufacturer Part Number Comment

CIN 1 µF Taiyo Yuden GMK212B7105KG-T CAP CER 1.0µF 35V X7R 0805

COUT 10 µF Taiyo Yuden JMK107BJ106MA-T CAP CER 10µF 6.3V X5R 0603

L 15 µH Coilcraft LPS3015-153MLB INDUCTOR POWER 15µH 0.61A SMD

RTOP 31.2 kΩPanasonic-ECG ERJ-2RKF3162X RES 31.6K OHM 1/10W 1% 0402 SMD

RBOT 10 kΩPanasonic-ECG ERJ-3EKF1002V RES 10.0K OHM 1/10W 1% 0603 SMD

FW Diode B0540 Diodes Inc. B0540WS-7 DIODE SCHOTTKY 0.5A 40V SOD323

Boost Diode 1N4148 Diodes Inc. 1N4448WS-7-F DIODE SWITCH 75V 200MW SOD-323

CB100 nF TDK® Corporation C1005X5R0J104M CAP CER 0.10uF 6.3V X5R 0402

REN 10 MΩPanasonic-ECG ERJ-2RKF1004X RES 1.00M OHM 1/10W 1% 0402 SMD

MCP16301

NOTES:

MCP16301

7.0 PACKAGING INFORMATION

7.1 Package Marking Information

Legend: XX...X Customer-specific information

Y Year code (last digit of calendar year)

YY Year code (last 2 digits of calendar year)

WW Week code (week of January 1 is week ‘01’)

NNN Alpha nu me ric trac eability code

Pb-free JEDEC designator for Matte Tin (Sn)

*This package is Pb-free. The P b-free JEDEC desi gnator ( )

can be found on the outer packaging for this package.

Note: In the event the fu ll Micr ochip part nu mber ca nnot be m arked o n one line, it w ill

be carried over to the next line, thus limiting the number of available

characters for customer-specific information.

6-Lead SOT-23

HTNN

Example

HT25

MCP16301

6-Lead Plastic Small Outline Transistor (CHY) [SOT-23]

Notes:

1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.

2. Dimensioning and tolerancing per ASME Y14.5M.

BSC: Basic Dimension. Theoretically exact value shown without tolerances.

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

Units MILLIMETERS

Dimension Limits MIN NOM MAX

Number of Pins N 6

Pitch e 0.95 BSC

Outside Lead Pitch e1 1.90 BSC

Overall Height A 0.90 – 1.45

Molded Package Thickness A2 0.89 – 1.30

Standoff A1 0.00 – 0.15

Overall Width E 2.20 – 3.20

Molded Package Width E1 1.30 – 1.80

Overall Length D 2.70 – 3.10

Foot Length L 0.10 – 0.60

Footprint L1 0.35 – 0.80

Foot Angle 0° – 30°

Lead Thickness c 0.08 – 0.26

Lead Width b 0.20 – 0.51

PIN 1 ID BY

LASER MARK

123

A2 c

Microchip Technology Drawing C04-028B

MCP16301

6-Lead Plastic Small Outline Transistor (CHY) [SOT-23]

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

MCP16301

NOTES:

MCP16301

APPENDIX A: REVISION HISTORY

Revision A (May 2011)

• Original Release of this D ocument.

MCP16301

NOTES:

MCP16301

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

Examples:

a) MCP16301T-I/CHY: Step-Down Regulator,

Tape and Reel,

Industrial Tempera ture

6LD SOT-23 pkg.

PART NO. -X /XXX

PackageTemperature

Range

Device

Device MCP16301T: High Voltage Step-Down Regulator,

Tape and Reel

Temp er atu re Rang e I = -40 °C to +85°C (Industrial)

Package CHY= Plastic Small Outline Transistor (SOT-23), 6-lead

Tape

and Reel

MCP16301

NOTES:

Information contained in this publication regarding device

applications a nd t he lik e is provided only f or your con ve nience

and may be supers ed ed by updates. I t is y o u r r es ponsibil ity to

ensure that your application meets with your specifications.

MICROCHIP MAKES NO REPRESENTATIONS OR

WARRANTIES OF ANY KIND WHETHER EXPRESS OR

IMPLIED, WRITTEN OR ORAL, STATUTORY OR

OTHERWISE, RELATED TO THE INFORMATION,

INCLUDING BUT NOT LIMITED TO ITS CONDITION,

QUALITY, PERFORMANCE, MERCHANTABILITY OR

FITNESS FOR PURPOSE. Microchip disclaims all liability

arising from this information and its use. Use of Microchip

devices in life support and/or safety applications is entirely at

the buyer’s risk, and the buyer agrees to defend, indemnify and

hold harmless Microchip from any and all damages, claims,

suits, or expenses resulting from such use. No licenses are

conveyed, implicitly or otherwise, under any Microchip

intellectual property rights.

Trademarks

The Microchip name and logo, the Microchip logo, dsPIC,

KEELOQ, KEELOQ logo, MPL AB, PIC , PI Cmi cro, PI CSTART,

PIC32 logo, rfPIC and UNI/O are registered trademarks of

Microchip Technology Incorporated in the U.S.A. and other

countries.

FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor ,

MXDEV, MXLAB, SEEVAL and The Embedded Control

Solutions Company are registered trademarks of Microchip

Technology Incorporated in the U.S.A.

Analog-for-the-Digital Age, Application Maestro, CodeGuard,

dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,

ECONOMONIT OR, FanSense, HI-TIDE, In-Circuit Se rial

Programming, ICSP, Mindi, MiWi, MPASM, MPLA B Cert ified

logo, MPLIB, MPLINK, mTouch, Omniscient Code

Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,

PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance,

TSHARC, UniWinDriver, WiperLock and ZENA are

trademarks of Microchip Technology Incorporated in the

U.S.A. and other countries.

SQTP is a service mark of Microchip T echnology Incorporated

in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

ISBN: 978-1-61341-179-7

Note the following details of the code protection feature on Microchip devices:

• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that it s f amily of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is c onstantly evolving. We a t Microc hip are co m mitted to continuously improving the code prot ect ion featur es of our

products. Attempts to break Microchip’ s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Microchip received ISO/TS-16949:2002 certification for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and

Tempe, Arizona; Gresham, Oregon and design centers in California

and India. The Company’s quality system processes and procedures

are for its PIC® MCU s and dsPIC® DSCs, KEELOQ® code hopping

devices, Serial EEPROMs, microperiph erals, nonvolatile memory and

analog products. In addition, Microchip’s quality system for the design

and manufacture of development systems is ISO 9001:2000 certified.

AMERICAS

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http://www.microchip.com/

support

Web Address:

www.microchip.com

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Worldwide Sales and Service

05/02/11