Type
BSC160N10NS3 G
$(*'#$%TM3 Power-Transistor
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9 % /6*- 4- ,/% 0)01!,# % RDS(on)
9 8 - .% /!1),'1% + .% /!12 /%
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Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C 42 A
TC=100 °C 27
TA=25 °C,
RthJA=50 K/W2) 8.8
Pulsed drain current3) ID,pulse TC=25 °C 168
Avalanche energy, single pulse EAS ID=33 A, RGS=25 #50 mJ
Gate source voltage VGS ±20 V
Power dissipation Ptot TC=25 °C 60 W
Operating and storage temperature Tj,Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
VDS 100 V
RDS(on),max 16 m#
ID42 A
Product Summary
Type Package Marking
BSC160N10NS3 G PG-TDSON-8 160N10NS
PG-TDSON-8
Rev. 2.4 page 1 2009-10-30
BSC160N10NS3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 2.1 K/W
RthJA 6 cm2cooling area2) - - 50
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 100 - - V
Gate threshold voltage VGS(th) VDS=VGS,ID=33 µA 2 2.7 3.5
Zero gate voltage drain current IDSS VDS=100 V, VGS=0 V,
Tj=25 °C - 0.01 1 µA
VDS=100 V, VGS=0 V,
Tj=125 °C - 10 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance RDS(on) VGS=10 V, ID=33 A - 13.9 16 m#
VGS=6 V, ID=16 A - 17.6 33
Gate resistance RG- 1.4 - #
Transconductance gfs |VDS|>2|ID|RDS(on)max,
ID=33 A 21 42 - S
Values
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Thermal resistance,
junction - ambient
3) see figure 3
1)J-STD20 and JESD22
Rev. 2.4 page 2 2009-10-30
BSC160N10NS3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 1300 1700 pF
Output capacitance Coss - 240 320
Reverse transfer capacitance Crss - 11 -
Turn-on delay time td(on) - 13 - ns
Rise time tr- 15 -
Turn-off delay time td(off) - 22 -
Fall time tf- 5 -
Gate Charge Characteristics
4)
Gate to source charge Qgs - 6 - nC
Gate to drain charge Qgd - 3 -
Switching charge Qsw - 5 -
Gate charge total Qg- 19 25
Gate plateau voltage Vplateau - 4.4 - V
Output charge Qoss VDD=50 V, VGS=0 V - 25 33 nC
Reverse Diode
Diode continous forward current IS- - 42 A
Diode pulse current IS,pulse - - 168
Diode forward voltage VSD VGS=0 V, IF=33 A,
Tj=25 °C - 1 1.2 V
Reverse recovery time trr - 53 ns
Reverse recovery charge Qrr - 83 - nC
4)
See figure 16 for gate charge parameter definition
VR=50 V, IF=16A,
diF/dt=100 A/µs
TC=25 °C
Values
VGS=0 V, VDS=50 V,
f=1 MHz
VDD=50 V, VGS=10 V,
ID=16 A, RG=1.6 #
VDD=50 V, ID=16 A,
VGS=0 to 10 V
Rev. 2.4 page 3 2009-10-30
BSC160N10NS3 G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS:
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
singlepulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5 10-4 10-3 10-2 10-1 100
10-2
10-1
100
101
ZthJC [K/W]
tp[s]
0
10
20
30
40
50
60
70
0 40 80 120 160
Ptot [W]
TC[°C]
0
10
20
30
40
50
0 40 80 120 160
ID[A]
TC[°C]
100 ns
1 µs
10 µs
100 µs
1 ms
DC
10-1 100101102103
10-1
100
101
102
103
ID[A]
VDS [V]
Rev. 2.4 page 4 2009-10-30
BSC160N10NS3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
4.5 V
5 V
5.5 V
6 V
7 V
10 V
0
5
10
15
20
25
30
0 20 40 60 80 100
RDS(on) [m ]
ID[A]
25 °C
150 °C
0
20
40
60
80
01234567
ID[A]
VGS [V]
0
20
40
60
80
0 20 40 60 80 100
gfs [S]
ID[A]
4.5 V
5 V
5.5 V
6 V
7 V
10 V
0
20
40
60
80
100
120
0 1 2 3
ID[A]
VDS [V]
Rev. 2.4 page 5 2009-10-30
BSC160N10NS3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=33 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
5
10
15
20
25
30
35
-60 -20 20 60 100 140 180
RDS(on) [m ]
Tj[°C]
33 µA
330 µA
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
Ciss
Coss
Crss
100
101
102
103
104
0 20 40 60 80
C[pF]
VDS [V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
1
10
100
1000
0 0.5 1 1.5 2
IF[A]
VSD [V]
Rev. 2.4 page 6 2009-10-30
BSC160N10NS3 G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 #VGS=f(Qgate); ID=16 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
20 V
50 V
80 V
0
2
4
6
8
10
0 5 10 15 20
VGS [V]
Qgate [nC]
90
95
100
105
110
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
BSC160N10NS3 G
Package Outline: PG-TDSON-8
Rev. 2.4 page 8 2009-10-30
BSC160N10NS3 G
Dimensions in mm
Rev. 2.4 page 9 2009-10-30
BSC160N10NS3 G
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Rev. 2.4 page 10 2009-10-30
