BAW56-G
www.vishay.com Vishay Semiconductors
Rev. 1.1, 25-Jun-13 1Document Number: 85872
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Switching Diode, Dual
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.1 mg
Packaging codes/options:
18/10K per 13” reel (8 mm tape), 10K(/box
08/3K per 7” reel (8 mm tape), 15K/box
FEATURES
Silicon epitaxial planar diode
Fast switching dual diode with common anode
AEC-Q101 qualified
Base P/N-G3 - green, commercial grade
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Note
(1) Device on fiberglass substrate
1
3
2
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
BAW56-G BAW56-G3-08 or BAW56-G3-18 Dual diodes common anode JDG Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage
= working peak reverse voltage
= DC blocking voltage
VR = VRRM 70 V
Forward continuous current IF250 mA
Non repetitive peak forward current
tp = 1 μs IFSM 2A
tp = 1 ms IFSM 1A
tp = 1 s IFSM 0.5 A
Power dissipation (1) Ptot 350 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air RthJA (1) 430 K/W
Junction temperature Tj150 °C
Storage temperature range Tstg - 65 to + 150 °C
Operating temperature range Top - 55 to + 150 °C
BAW56-G
www.vishay.com Vishay Semiconductors
Rev. 1.1, 25-Jun-13 2Document Number: 85872
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Peak forward current /fm = f (tp)
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
IF = 1 mA VF0.715 V
IF = 10 mA VF0.855 V
IF = 50 mA VF1V
IF = 150 mA VF1.25 V
Reverse current
VR = 70 V IR2500 nA
VR = 70 V, Tj = 150 °C IR100 μA
VR = 25 V, Tj = 150 °C IR30 μA
Diode capacitance VF = VR = 0, f = 1 MHz CD2pF
Reverse recovery time IF =10 mA to iR =1 mA,
VR = 6 V, RL = 100 trr 6ns
I - Forward Current (mA)
0.01
0.1
1
10
100
1000
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
-Forward Voltage (V)
14356
F
Tj = 100 °C
25 °C
22290
102
101
10-1
10-2
10-5
10-6 10-3
10-4 10-1
10-2 10-0
100
/
FM
t
s
D = 0.005
0.01
0.02
0.05
0.1
0.2
tp
tp
D = TT
BAW56-G
www.vishay.com Vishay Semiconductors
Rev. 1.1, 25-Jun-13 3Document Number: 85872
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
Foot print recommendation:
Rev. 8 - Date: 23.Sept.2009
17418
Document no.: 6.541-5014.01-4
0.9 (0.035)
1 (0.039)
0.9 (0.035)
1 (0.039)
1.43 (0.056)
0.45 (0.018)
0.35 (0.014)
2.8 (0.110)
3.1 (0.122)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.1 (0.004) max.
2.35 (0.093)
2.6 (0.102)
0.175 (0.007)
0.098 (0.004)
1.15 (0.045)
0.9 (0.035)
1.20 (0.047)
0.95 (0.037) 0.95 (0.037)
2 (0.079)
0.7 (0.028)
0.9 (0.035)
0° to 8°
0.2 (0.008)
0.3 (0.012)
0.5 (0.020)
0.550 ref. (0.022 ref.)
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Revision: 08-Feb-17 1Document Number: 91000
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