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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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SS8050 — NPN Epit axial Silicon Transistor
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8050 Rev. 1.1.0
November 2014
SS8050
NPN Epitaxial Silicon Transistor
Features
• 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation.
• Complimentary to SS8550
• Collector Current: IC = 1.5 A
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
SS8050BBU S8050 TO-92 3L Bulk
SS8050CBU S8050 TO-92 3L Bulk
SS8050CTA S8050 TO-92 3L Ammo
SS8050DBU S8050 TO-92 3L Bulk
SS8050DTA S8050 TO-92 3L Ammo
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 6 V
ICCollector Current 1.5 A
TJJunction Temperature 150 °C
TSTG Storage Temperature -65 to 150 °C
1. Emitter 2. Base 3. Collector
TO-92
1
SS8050 — NPN Epit axial Silicon Transistor
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8050 Rev. 1.1.0 2
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
hFE Classification
Symbol Parameter Value Unit
PDPower Dissipation 1 W
Derate Above 25°C8mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 125 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 40 V
BVCEO Collector-Emitter Breakdown Voltage IC = 2 mA, IB = 0 25 V
BVEBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 6 V
ICBO Collector Cut-Of f Curren t VCB = 35 V, IE = 0 100 nA
IEBO Emitter Cut-Off Current VEB = 6 V, IC = 0 100 nA
hFE1 DC Current Gain VCE = 1 V, IC = 5 mA 45
hFE2 VCE = 1 V, IC = 100 mA 85 300
hFE3 VCE = 1 V, IC = 800 mA 40
VCE(sat) Collector-Emitter Saturation Voltage IC = 800 mA, IB = 80 mA 0.5 V
VBE(sat) Base-Emitter Saturation Voltage IC = 800 mA, IB = 80 mA 1.2 V
VBE(on) Base-Emitter On Voltage VCE = 1 V, IC = 10 mA 1 V
Cob Output Capacitance VCB = 10 V, IE = 0,
f = 1 MHz 9.0 pF
fTCurrent Gain Bandwidth Product VCE = 10 V, IC = 50 mA 100 MHz
Classification B C D
hFE2 85 ~ 160 120 ~ 200 160 ~ 300
SS8050 — NPN Epit axial Silicon Transistor
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8050 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Static Characterist ic Figure 2. DC Current Gain
Figure 3. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
0 0.4 0.8 1.2 1.6 2.0
0.1
0.2
0.3
0.4
0.5
IB = 3.0mA
IB = 2.5mA
IB = 2.0mA
IB = 1.5mA
IB = 1.0mA
IB = 0.5mA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.1 1 10 100 1000
1
10
100
1000
VCE = 1V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
0.1 1 10 100 1000
10
100
1000
10000
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
0.00.20.40.60.81.01.2
0.1
1
10
100
VCE = 1V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
110100
1
10
100
1000
IE = 0
f = 1MHz
Cob [pF], CAPACITANCE
VCB [V], COLLECTOR-BASE VOLTAGE
1 10 100 400
1
10
100
1000
VCE = 10V
fT[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
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1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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