PD - 93751D IRHNJ57Z30 JANSR2N7479U3 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/703 5 Product Summary Part Number Radiation Level RDS(on) IRHNJ57Z30 100K Rads (Si) 0.020 IRHNJ53Z30 300K Rads (Si) 0.020 IRHNJ54Z30 TECHNOLOGY 500K Rads (Si) ID QPL Part Number 22A* JANSR2N7479U3 22A* JANSF2N7479U3 0.020 22A* JANSG2N7479U3 IRHNJ58Z30 1000K Rads (Si) 0.025 22A* JANSH2N7479U3 SMD-0.5 TM International Rectifier's R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight Units 22* 22* 88 75 0.6 20 155 22 7.5 1.7 -55 to 150 A W W/C V mJ A mJ V/ns o C 300 (for 5s) 1.0 (Typical) g * Current is limited by package For footnotes refer to the last page www.irf.com 1 04/25/06 IRHNJ57Z30, JANSR2N7479U3 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Min Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units 30 -- -- V -- 0.028 -- V/C -- -- 0.02 2.0 16 -- -- -- -- -- -- 4.0 -- 10 25 V S( ) A IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 100 -100 65 20 10 25 100 35 30 -- Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 2054 936 33 -- -- -- nA nC ns nH pF Test Conditions VGS = 0V, I D = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 22A A Parameter BVDSS VDS = VGS, ID = 1.0mA VDS 15V, IDS = 22A A VDS= 24V ,VGS=0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, I D = 22A VDS = 15V VDD = 15V, ID = 22A, VGS =12V, RG = 7.5 Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time -- -- -- -- -- -- -- -- -- -- 22* 88 1.2 102 193 Test Conditions A V ns nC Tj = 25C, IS = 22A, VGS = 0V A Tj = 25C, IF = 22A, di/dt 100A/s VDD 25V A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max -- -- -- 6.9 1.67 -- Units C/W Test Conditions soldered to a 2 square copper-clad board Note: Corresponding Spice and Saber models are available on International Rectifier web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNJ57Z30, JANSR2N7479U3 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Test Conditions Up to 500K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source A On-State Resistance (SMD-0.5) Diode Forward Voltage A 30 2.0 -- -- -- -- -- 4.0 100 -100 10 0.024 30 1.5 -- -- -- -- -- 4.0 100 -100 25 0.03 A VGS = 0V, I D = 1.0mA VGS = VDS , ID = 1.0mA VGS = 20V VGS = -20 V VDS= 24V, VGS =0V VGS = 12V, ID =22A -- 0.02 -- 0.025 VGS = 12V, ID =22A -- 1.2 -- 1.2 V VGS = 0V, IS = 22A V nA 1. Part numbers IRHNJ57Z30 (JANSR2N7479U3), IRHNJ53Z30 (JANSF2N7479U3) and IRHNJ54Z30 (JANSG2N7479U3) 2. Part number IRHNJ58Z30 (JANSH2N7479U3) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion VDS (V) Range (m) @V GS=0V @VGS=-5V @V GS=-10V @VGS=-15V @VGS=-20V 40 30 30 30 25 15 37 30 30 30 22.5 15 33 25 25 20 15 7.5 Energy (MeV) 261 285 344 VDS Cu Br I LET (MeV/(mg/cm2)) 28 37 60 35 30 25 20 15 10 5 0 Cu Br I 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNJ57Z30, JANSR2N7479U3 100 Pre-Irradiation 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 10 5.0V 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 5.0V 10 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C 10 V DS =15 15V 25V 20s PULSE WIDTH 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 10 100 Fig 2. Typical Output Characteristics 100 7.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 6.0 20s PULSE WIDTH TJ = 150 C 1 0.1 100 VDS , Drain-to-Source Voltage (V) 1 5.0 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 22A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 3200 Coss 2400 Ciss 1600 800 20 VGS , Gate-to-Source Voltage (V) 4000 IRHNJ57Z30, JANSR2N7479U3 ID = 22A VDS = 24V VDS = 15V VDS = 6V 15 10 5 FOR TEST CIRCUIT SEE FIGURE 13 Crss 0 1 10 0 100 0 10 VDS , Drain-to-Source Voltage (V) 30 40 50 60 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 20 QG , Total Gate Charge (nC) TJ = 150 C OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 25 C 10 V GS = 0 V 1 0.4 0.8 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 100s 1ms 10 Tc = 25C Tj = 150C Single Pulse 10ms 1 1.6 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHNJ57Z30, JANSR2N7479U3 Pre-Irradiation 50 LIMITED BY PACKAGE VGS 40 I D , Drain Current (A) RD VDS D.U.T. RG 30 + -V DD V GS Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 0.02 0.01 0.01 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com IRHNJ57Z30, JANSR2N7479U3 15V L VDS D.U.T. RG IAS VGS 20V DRIVER + - VDD 0.01 tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) Pre-Irradiation 320 TOP BOTTOM 240 160 80 0 25 V(BR)DSS ID 9.8A 14A 22A 50 75 100 125 150 Starting TJ , Junction Temperature ( C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12V .2F .3F 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHNJ57Z30, JANSR2N7479U3 Pre-Irradiation Footnotes: A Repetitive Rating; Pulse width limited by maximum junction temperature. A VDD = 15V, starting TJ = 25C, L= 0.64mH Peak IL = 22A, VGS = 12V A ISD 22A, di/dt 54A/s, VDD 30V, TJ 150C A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 24 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- SMD-0.5 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2006 8 www.irf.com