Absolute Maximum Ratings
Parameter Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 22*
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 22*
IDM Pulsed Drain Current À88
PD @ TC = 25°C Max. Power Dissipation 75 W
Linear Derating Factor 0.6 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy Á155 mJ
IAR Avalanche Current À22 A
EAR Repetitive Avalanche Energy À7.5 mJ
dv/dt Peak Diode Recovery dv/dt Â1.7 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Pckg. Mounting Surface Temp. 300 (for 5s)
Weight 1.0 (Typical) g
Pre-Irradiation
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
oC
A
04/25/06
www.irf.com 1
* Current is limited by package
Features:
nSingle Event Effect (SEE) Hardened
nUltra Low RDS(on)
nLow Total Gate Charge
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nSurface Mount
nCeramic Package
nLight Weight
For footnotes refer to the last page
SMD-0.5
RADIATION HARDENED JANSR2N7479U3
POWER MOSFET 30V, N-CHANNEL
SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/703
TECHNOLOGY
IRHNJ57Z30
55
Product Summary
Part Number Radiation Level RDS(on) IDQPL Part Number
IRHNJ57Z30 100K Rads (Si) 0.020Ω 22A* JANSR2N7479U3
IRHNJ53Z30 300K Rads (Si) 0.020Ω 22A* JANSF2N7479U3
IRHNJ54Z30 500K Rads (Si) 0.020Ω 22A* JANSG2N7479U3
IRHNJ58Z30 1000K Rads (Si) 0.025 Ω 22A* JANSH2N7479U3
PD - 93751D
IRHNJ57Z30, JANSR2N7479U3 Pre-Irradiation
2www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 — — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.028 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.02 ΩVGS = 12V, ID = 22A
Resistance
VGS(th) Gate Threshold Voltage 2.0 — 4 . 0 V VDS = VGS, ID = 1.0mA
gfs Forward Transconductance 16 — — S ( )V
DS ≥ 15V, IDS = 22A Ã
IDSS Zero Gate Voltage Drain Current — — 10 VDS= 24V ,VGS=0V
——25 V
DS = 24V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 65 VGS =12V, ID = 22A
Qgs Gate-to-Source Charge — — 20 nC VDS = 15V
Qgd Gate-to-Drain (‘Miller’) Charge — — 10
td(on) Turn-On Delay Time — — 25 VDD = 15V, ID = 22A,
trRise Time — — 100 VGS =12V, RG = 7.5Ω
td(off) Turn-Off Delay Time — — 35
tfFall Time — — 30
LS + LDTotal Inductance — 4.0 —
Ciss Input Capacitance — 2054 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 936 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 33 —
nA
Ω
Ã
nH
ns
µA
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 1.67
RthJ-PCB Junction-to-PC board — 6.9 — soldered to a 2 square copper-clad board
°C/W
Measured from the center of
drain pad to center of source pad
Note: Corresponding Spice and Saber models are available on International Rectifier web site.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — 22*
ISM Pulse Source Current (Body Diode) À——88
VSD Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 22A, VGS = 0V Ã
trr Reverse Recovery Time — — 102 ns Tj = 25°C, IF = 22A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 193 nC VDD ≤ 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D.
A
* Current is limited by package
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Pre-Irradiation IRHNJ57Z30, JANSR2N7479U3
T able 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter Up to 500K Rads(Si)1 1000K Rads (Si)2
Units
Test Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage 30 — 30 — V VGS = 0V, ID = 1.0mA
VGS(th) Gate Threshold Voltage 2.0 4.0 1.5 4.0 VGS = V DS, ID = 1.0mA
IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V
IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V
IDSS Zero Gate Voltage Drain Current — 10 — 25 µA VDS= 24V, VGS =0V
RDS(on) Static Drain-to-Source à — 0.024 — 0.03 Ω VGS = 12V, ID =22A
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source à — 0.02 — 0.025 Ω VGS = 12V, ID =22A
On-State Resistance (SMD-0.5)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHNJ57Z30 (JANSR2N7479U3), IRHNJ53Z30 (JANSF2N7479U3) and IRHNJ54Z30 (JANSG2N7479U3)
2. Part number IRHNJ58Z30 (JANSH2N7479U3)
Fig a. Single Event Effect, Safe Operating Area
VSD Diode Forward Voltage à — 1.2 — 1.2 V VGS = 0V, IS = 22A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
I on L ET Energy Range VDS (V)
(MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu 28 261 40 30 30 30 25 15
Br 37 285 37 30 30 30 22.5 15
I 60 344 33 25 25 20 15 7.5
T able 2. Single Event Effect Safe Operating Area
0
5
10
15
20
25
30
35
-20-15-10-50
VGS
VDS
Cu
Br
I
IRHNJ57Z30, JANSR2N7479U3 Pre-Irradiation
4www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
12V
22A
1
10
100
0.1 1 10 100
20µs PU LSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
1
10
100
5.0 6.0 7.0 8.0 9.0
V = 1 5 V
20µs PULSE WIDTH
DS
V , Gate-to-Sou rce Vol tage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
25V
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Pre-Irradiation IRHNJ57Z30, JANSR2N7479U3
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
800
1600
2400
3200
4000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
010 20 30 40 50 60
0
5
10
15
20
Q , T otal Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
22A
V = 6V
DS
V = 15V
DS
V = 24V
DS
1
10
100
0.4 0.8 1.2 1.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1 10 100
VDS, Dr ain- to- Sour ce Vol tage ( V)
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150° C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µs
IRHNJ57Z30, JANSR2N7479U3 Pre-Irradiation
6www.irf.com
Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Re ctangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
VGS
25 50 75 100 125 150
0
10
20
30
40
50
T , C a se Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
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Pre-Irradiation IRHNJ57Z30, JANSR2N7479U3
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
D
S
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
.
25 50 75 100 125 150
0
80
160
240
320
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
9.8A
14A
22A
VGS
IRHNJ57Z30, JANSR2N7479U3 Pre-Irradiation
8www.irf.com
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
24 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 15V, starting TJ = 25°C, L= 0.64mH
Peak IL = 22A, VGS = 12V
 ISD ≤ 22A, di/dt ≤ 54A/µs,
VDD ≤ 30V, TJ ≤ 150°C
Footnotes:
Case Outline and Dimensions — SMD-0.5
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2006
