KBP005 G thru KBP10G
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Reliable low cos t construction utilizing molded plastic
techniqu e
The plastic material has UL flamm ability classifica tion
94V-0
UL recognized file # E95060
M ECHANIC AL DATA
Polarity : As marked on body
Weight : 0.05 ounces, 1.52 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICA L CHARA CTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
NOTES : 1.Measured at 1.0 MHz a nd applied reverse voltage of 4.0VDC.
2.Unit Mounte d on 75mm x 75mm x 1.6mm Cu Plate H eatsink.
Maximum Av erage Forward
Rectified Curre nt
Peak Fo rward Surge Curren t
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maxim um forward Voltage at 1.5A DC
Maximum DC Reverse Current
at Rate d DC Blocking Voltage
Typi c al Junction
Capacitance per element (Note 1)
1.5
40
1.1
5.0
500
Operating Temperature Range C
Storage Temperature Range
Typ ical Th ermal Resistance ( Note 2)
C/W
A
A
UNITCHARACTERISTICS SYMBOL
GLASS PASSIVATED BRI DGE RE CTIFIERS
REVERSE VOLTAGE
- 50
to
100 0
Volts
FOR WARD CURRENT
- 1.5
Amperes
KBP
A ll Dimensions in millimeter
KBP
DIM. MIN. MAX.
A
C
D
E
F
G
H
B14.25 14.75
3.65 3.3 5
10.20 10.60
14.73
14.25 2.50
0.8 0 1.10
3.5 6 4.06
1.1 7 0.64
M
L
K
J
I 1.42
0.3 0
0.86 0.7 6
- 3
- 2
2.8 x 45
2.10
+
++
+-
--
-
~
~~
~
~
~~
~
AF
E
D
C
B
L
K
J
I
H
G
M
SEMICONDUCTOR
LITE-ON
REV. 3, 08-Mar-2002, KBDE01
I
2
t Rating for fusing (t < 8.3ms) A
2
S
I
2
t
@T
C
=105 C
@T
A
=75 C
@TJ =25 C
@TJ= 125 C
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
θ
JC
T
J
T
STG
KBP
005G
50
35
50
KBP
01G
100
70
100
KBP
02G
200
140
200
KBP
04G
400
280
400
KBP
06G
600
420
600
KBP
08G
800
560
800
KBP
10G
1000
700
1000
V
V
V
V
uA
pF
C
6.6
20
18
-55 to 150
-55 to 150
RATING AND CHARACTERIST IC CURVES
KB P00 5 G th ru KBP1 0G
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FO RWARD CURRENT ,(A)
0.2 0.4 1.2 1.4
0
0.1
1.0
10
0.6 0.8 1.0
.01 1.8
1.6
TJ= 25 C
PUL SE WIDTH 300us
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 100220
0
05
10
15
20
45
40
35
30
25
Single Half-Sine-Wave
(JEDEC METHOD)
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURREN T
AMPERES
40 60 100 120
0.75
0.0 20
0.25
1.50
80
TE M PERATURE , C
1.25
0.50
140
0
AMBIENT CASE
1.00
SINGLE PHASE HALF WAVE 60 H z
RESI S TI V E OR INDUCT I V E LOA D
FIG.3 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLT AG E , VO LTS
10.0
0.1 100
10
1.0 TJ= 25 C, f= 1MHz
1.0
Vsig =50mV p-p
100
4
FIG.5 - TYPICAL REVERSE CHARACT ERIST I CS
INSTANTANEOUS REVERSE CURRENT ,(uA)
20 40 120 140
0
0.01
0.1
1000
10
60 80 100
TJ= 25 C
1.0
TJ= 125 C
TJ= 100 C
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
100
REV. 3, 08-M ar-2002, KBDE01