© Semiconductor Components Industries, LLC, 2016
August, 2019 − Rev. 2
1Publication Order Number:
NVTFS5C680NL/D
NVTFS5C680NL
MOSFET – Power, Single
N-Channel
60 V, 26.5 mW, 20 A
Features
•Small Footprint (3.3 x 3.3 mm) for Compact Design
•Low RDS(on) to Minimize Conduction Losses
•Low Capacitance to Minimize Driver Losses
•NVTFS5C680NLWF − Wettable Flanks Product
•AEC−Q101 Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 60 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJC
(Notes 1, 2, 3, 4) Steady
State
TC = 25°CID20 A
TC = 100°C 14
Power Dissipation
RqJC (Notes 1, 2, 3)
TC = 25°CPD20 W
TC = 100°C 10
Continuous Drain
Current RqJA
(Notes 1 & 3, 4) Steady
State
TA = 25°CID7.82 A
TA = 100°C 6.54
Power Dissipation
RqJA (Notes 1, 3)
TA = 25°CPD3.0 W
TA = 100°C 2.1
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 80 A
Operating Junction and Storage Temperature TJ, Tstg −55 to
+175
°C
Source Current (Body Diode) IS17 A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 1 A)
EAS 51 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter Symbol Value Unit
Junction−to−Case − Steady State (Note 3) RqJC 7.32 °C/W
Junction−to−Ambient − Steady State (Note 3) RqJA 49
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
www.onsemi.com
V(BR)DSS RDS(on) MAX ID MAX
60 V
26.5 mW @ 10 V
20 A
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
42.5 mW @ 4.5 V
(Note: Microdot may be in either location)
1
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
1
XXXX
AYWWG
G
D
D
D
D
S
S
S
G
N−Channel
D (5 − 8)
S (1, 2, 3)
G (4)
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION