IPZ40N04S5L-2R8 OptiMOSTM-5 Power-Transistor Product Summary VDS 40 V RDS(on),max 2.8 mW ID 40 A Features * OptiMOSTM - power MOSFET for automotive applications PG-TSDSON-8-33 * N-channel - Enhancement mode - Logic Level * AEC Q101 qualified 1 * MSL1 up to 260C peak reflow * 175C operating temperature 1 * Green Product (RoHS compliant) * 100% Avalanche tested Type Package Marking IPZ40N04S5L-2R8 PG-TSDSON-8-33 5N04L28 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions Value T C=25C, V GS=10V 40 T C=100C, V GS=10V2) 40 Unit A Pulsed drain current2) I D,pulse T C=25C 160 Avalanche energy, single pulse2) E AS I D=20A 140 mJ Avalanche current, single pulse I AS - 40 A Gate source voltage V GS - 16 V Power dissipation P tot T C=25C 71 W Operating and storage temperature T j, T stg - -55 ... +175 C Rev. 1.1 page 1 2015-07-27 IPZ40N04S5L-2R8 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 2.1 Thermal resistance, junction ambient R thJA 6 cm2 cooling area3) - - 60 K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=30A 1.2 1.6 2.0 Zero gate voltage drain current I DSS V DS=40V, V GS=0V, T j=25C - - 1 T j=125C2) - - 100 V DS=40V, V GS=0V, V A Gate-source leakage current I GSS V GS=16V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5V, I D=20A - 2.8 3.8 mW V GS=10V, I D=20A - 2.2 2.8 Rev. 1.1 page 2 2015-07-27 IPZ40N04S5L-2R8 Parameter Symbol Values Conditions Unit min. typ. max. - 2080 2800 - 470 625 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 31 47 Turn-on delay time t d(on) - 4 - Rise time tr - 3 - Turn-off delay time t d(off) - 20 - Fall time tf - 14 - Gate to source charge Q gs - 5.4 7.2 Gate to drain charge Q gd - 7.8 11.7 Gate charge total Qg - 39 52 Gate plateau voltage V plateau - 2.6 - V - - 40 A - - 160 V GS=0V, V DS=25V, f =1MHz V DD=20V, V GS=10V, I D=40A, R G=3.5W pF ns Gate Charge Characteristics2) V DD=32V, I D=40A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current1) I S,pulse Diode forward voltage V SD V GS=0V, I F=20A, T j=25C - 0.8 1.1 V Reverse recovery time1) t rr V R=20V, I F=40A, di F/dt =100A/s - 38 - ns Reverse recovery charge1) Q rr - 32 - nC T C=25C 1) Current is limited by package; with an R thJC = 2.1K/W the chip is able to carry 110A at 25C. 2) The parameter is not subject to production test- verified by design/characterization. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2015-07-27 IPZ40N04S5L-2R8 1 Power dissipation 2 Drain current P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V 80 50 40 60 ID [A] Ptot [W] 30 40 20 20 10 0 0 0 50 100 150 200 0 50 100 TC [C] 150 200 TC [C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 s 100 0.5 ZthJC [K/W] 10 s 100 ID [A] 100 s 150 s 0.1 0.05 10-1 0.01 10 single pulse 10-2 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.1 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2015-07-27 IPZ40N04S5L-2R8 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 C R DS(on) = f(I D); T j = 25 C parameter: V GS parameter: V GS 160 12 10 V 2.5 V 3.5 V 3V 2.75 V 10 120 8 RDS(on) [mW] ID [A] 3V 80 6 4 2.75 V 3.5 V 40 10 V 2 2.5 V 0 0 1 2 0 3 0 40 80 VDS [V] 120 160 ID [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 20 A; V GS = 10 V 160 5 120 4 RDS(on) [mW] ID [A] parameter: T j 80 3 175 C 40 25 C 2 -55 C 0 1.5 2 2.5 3 3.5 VGS [V] Rev. 1.1 1 -60 -20 20 60 100 140 180 Tj [C] page 5 2015-07-27 IPZ40N04S5L-2R8 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 2 Ciss 1.5 C [pF] 300 A VGS(th) [V] 30 A Coss 103 1 Crss 102 0.5 101 0 -60 -20 20 60 100 140 0 180 10 20 30 VDS [V] Tj [C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 100 103 25 C 102 IF [A] IAV [A] 100 C 175 C 101 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.1 150 C 25 C 100 0 10 1 1 10 100 1000 tAV [s] page 6 2015-07-27 IPZ40N04S5L-2R8 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA 46 300 250 44 10 A VBR(DSS) [V] EAS [mJ] 200 150 20 A 42 40 100 40 A 38 50 36 0 25 75 125 -60 175 -20 Tj [C] 20 60 100 140 180 Tj [C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 40 A pulsed parameter: V DD 10 V GS 8V 9 Qg 32 V 8 7 VGS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw Q gate 1 Q gs 0 0 10 20 30 Q gd 40 Qgate [nC] Rev. 1.1 page 7 2015-07-27 IPZ40N04S5L-2R8 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 2015-07-27 IPZ40N04S5L-2R8 Revision History Version Revision 1.0 Revision 1.1 Rev. 1.1 Date Changes 2015-05-05 Final Data Sheet 2015-07-27 Update of package name page 9 2015-07-27