IPZ40N04S5L-2R8
Parameter Symbol Conditions Unit
min. typ. max.
2)
Input capacitance Ciss - 2080 2800 pF
Output capacitance Coss - 470 625
Reverse transfer capacitance Crss - 31 47
Turn-on delay time td(on) - 4 - ns
Rise time tr- 3 -
Turn-off delay time td(off) - 20 -
Fall time tf- 14 -
Gate Charge Characteristics
2)
Gate to source charge Qgs - 5.4 7.2 nC
Gate to drain charge Qgd - 7.8 11.7
Gate charge total Qg- 39 52
Gate plateau voltage Vplateau - 2.6 - V
Diode continous forward current2) IS- - 40 A
Diode pulse current1) IS,pulse - - 160
Diode forward voltage VSD VGS=0V, IF=20A,
Tj=25°C - 0.8 1.1 V
Reverse recovery time1) trr VR=20V, IF=40A,
diF/dt=100A/µs - 38 - ns
Reverse recovery charge1) Qrr - 32 - nC
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1) Current is limited by package; with an RthJC = 2.1K/W the chip is able to carry 110A at 25°C.
TC=25°C
2) The parameter is not subject to production test- verified by design/characterization.
Values
VGS=0V, VDS=25V,
f=1MHz
VDD=20V, VGS=10V,
ID=40A, RG=3.5W
VDD=32V, ID=40A,
VGS=0 to 10V
page 3 2015-07-27