DSS25-0025B
Schottky Diode
Symbol Definition
R a t i n g s
Features / Advantages:
● Very low Vf
● Extremely low switching losses
● low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
typ. max.
I
FSM
I
R
A
mA
V
330
I
FAV
A
V
F
0.52
R
thJC
1.40 K/W
V
R
=
13
min.
25
t = 10 ms
Applications:
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
V
RRM
V
25
20
T
VJ
C°V =
T
VJ
°C Am= 80
Package:
Part number
V
R
=
T
VJ
= °C
I
F
= A
V
T
C
= 125°C
rectangular, d = 0.5
P
tot
90 WT
C
°C=
T
VJ
150 °C-55
V
I
RRM
FAV
=
=
25
25
25
T
VJ
= 45°C
DSS25-0025B
V
A
25
V
25
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
tinUsnoitidnoC
0.67
T
VJ
°C= 25
100
V
F0
V
0.21
T
VJ
= 150°C
r
F
8.8 Ω
m
V
0.45
T
VJ
= °C
I
F
= A
V
25 125
0.66
I
F
= A50
I
F
= A50
threshold voltage
slope resistance for power loss calculation only
Backside: cathode
(50 Hz), sine
V
F
= 0.45 V
● Housing:
High Performance Schottky Diode
Low Loss and Soft Recovery
Single Diode
TO-220
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
E
AS
20 mJ
I
AS
= A; L = µH
I
AR
A
V
A
=2
f = 10 kHz1.5·V
R
typ.;
20 100
non-repetitive avalanche energy
repetitive avalanche current
T = °C25
VJ
IXYS reserves the right to change limits, conditions and dimensions.
© 2007 IXYS all rights reserved
20071001b
Data according to IEC 60747and per diode unless otherwise specified
DSS25-0025B
I
RMS
A
per pin 35
R
thCH
K/W0.50
M
D
Nm0.8
mounting torque 0.4
T
stg
°C150
storage temperature -55
Weight g2
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
F
C
N60
mounting force with clip 20
Ordering Delivering Mode Base Qty Code Key
Standard Part Name
DSS25-0025B 475114Tube 50
XXXXXX
YYWW
Logo
Marking on product
DateCode
Assembly Code
abcdef
Product Marking
1)
1
)
Marking on Pr oduct
DSS25-0025B
RMS
IXYS reserves the right to change limits, conditions and dimensions.
© 2007 IXYS all rights reserved
20071001b
* Data according to IEC 60747and per diode unless otherwise specified
DSS25-0025B
Outlines TO-220
IXYS reserves the right to change limits, conditions and dimensions.
© 2007 IXYS all rights reserved
20071001b
* Data according to IEC 60747and per diode unless otherwise specified
DSS25-0025B
0.0 0.2 0.4 0.6
1
10
100
0 5 10 15 20 25
0.01
0.1
1
10
100
1000
0102030
0
5
10
15
20
0.0001 0.001 0.01 0.1 1 10
0.01
0.1
1
04080120160
0
10
20
30
40
I
F(AV)
T
C
°C
I
F(AV)
t
s
K/W
0 5 10 15 20 25
100
1000
10000
C
T
I
R
I
F
A
V
F
V
R
V
R
V
pF
V
mA
A
P
(AV)
W
Z
thJC
V
Single Pulse
2
DSS 25-0025B
A
T
VJ
=150°C
125°C
100°C
75°C
25°C
T
VJ
=
150°C
125°C
25°C
T
VJ
=25°C
d=0.5
d=
DC
0.5
0.33
0.25
0.17
0.08
0.08
D=0.5
0.17
DC
50°C
0.33
0.25
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
Fig. 2 Typ. value of reverse current
I
R
vs. reverse voltage V
R
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 4 Avg. forward current I
F(AV)
vs. case temperature T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
IXYS reserves the right to change limits, conditions and dimensions.
© 2007 IXYS all rights reserved
20071001b
* Data according to IEC 60747and per diode unless otherwise specified
