KBP005G Thru KBP10G 1.5 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER Wi FEATURES Rating to 1000V PRV Surge overload rating to 40 Amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive product i Outline Drawing . . KeP e UL recognized: File #E106441 KBP-G Dim | Min | Max e UL recognized 94V-O plastic material L Aj 1425 | 475 li B 10.20 10.66 Krike aM c 2.29 Typical D | 1425 | 14.73 Mi Mechanical Data B E | 356 | 406 . N G 0.76 0.86 e Case: Molded plastic C Hw [17 | ae . J 26X45* e Leads: Tin plated copper _ Charter D K . e Leads solderable per MIL-STD-202, ee Method 208 M 3 Nominal . N 2* Nominal e Weight: 0.05 ounce, 1.52 grams Gall mn uP [ec pem | on Dimensions in inches and (millimeters) i Maximum Ratings & Characteristics Ratings at 25 C ambient temperature unless otherwise specified Single phase, half wave, 6OHz, resistive or inductive load For capacitive load, derate current by 20% | KBP KBP KBP KBP KBP KBP KBP Units | 005G | O1G 02G 04G 06G 08G 10G Maximum Recurrent Peak Reverse Voltage | Vrrm 50 100 200 400 600 800 1000 Vv Maximum RMS Voltage VMs 35 70 140 280 420 560 700 Vv _ Maximum DC Blocking Voltage Voc 60 100 | 200 | 400 600 800 1000 Vv Maximum Average Forward @ Ta = 75C lay 15 A Output Current Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave lFsm 40 A Superimposed On Rated Load _ Maximum DC Forward Voltage Drop per Element Ve 14 V _ At1.0A DC 7 | Maximum DC Reverse Current At Rated@ Ta = 25C Ip 5 pA | DC Blocking Voltage per Element @ Ta = 125C 500 ? t Rating for Fusing (t < 8.3ms) rt 6.6 A?S Typical Junction Capacitance Per Element * Cy 20 pF |__Typical Thermal Resistance ** R(TH j-C) | 18 C/W Operating Temperature Range Ty -55 to +150 C Storage Temperature Range Tstc | -55 to +150 C Notes: * Measured at 1.0 MHZ and applied reverse voltage of 4.0V DC ** Thermal resistance junction to case Collmer Semiconductor, Inc.