SSM6P05FU - Toshiba - Datasheet.World

SSM6P05FU

2007-11-01

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM6P05FU

Power Management Switch

High Speed Switching Applications

• Small package

• Low on resistance : Ron = 3.3 Ω (max) (@VGS = −4 V)

: Ron = 4.0 Ω (max) (@VGS = −2.5 V)

• Low gate threshold voltage

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristics Symbol Rating Unit

Drain-Source voltage VDS −20 V

Gate-Source voltage VGSS ±12 V

DC ID −200

Drain current

Pulse IDP −400

Drain power dissipation (Ta = 25°C) PD (Note 1) 300 mW

Channel temperature Tch 150 °C

Storage temperature range Tstg −55~150 °C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating, mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6)

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-2J1C

Weight: 6.8 mg (typ.)

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SSM6P05FU

2007-11-01

Marking Equivalent Circuit (top view)

Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS V

GS = ±12 V, VDS = 0 ⎯ ⎯ ±1 μA

Drain-Source breakdown voltage V (BR) DSS ID = −1 mA, VGS = 0 −20 ⎯ ⎯ V

Drain cut-off current IDSS V

DS = −20 V, VGS = 0 ⎯ ⎯ −1 μA

Gate threshold voltage Vth V

DS = −3 V, ID = −0.1 mA −0.6 ⎯ −1.1 V

Forward transfer admittance ⎪Yfs⎪ V

DS = −3 V, ID = −50 mA (Note2) 100 ⎯ ⎯ mS

ID = −100 mA, VGS = −4 V (Note2) ⎯ 2.1 3.3

Drain-Source ON resistance RDS (ON)

ID = −50 mA, VGS = −2.5 V (Note2) ⎯ 3.2 4.0

Input capacitance Ciss ⎯ 27 ⎯ pF

Reverse transfer capacitance Crss ⎯ 7 ⎯ pF

Output capacitance Coss

VDS = −3 V, VGS = 0, f = 1 MHz

⎯ 21 ⎯ pF

Turn-on time ton ⎯ 70 ⎯

Switching time

Turn-off time toff

VDD = −3 V, ID = −50 mA,

VGS = 0~−2.5 V ⎯ 70 ⎯ ns

Note2: Pulse test

Switching Time Test Circuit (Q1, Q2 common)

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for

this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires

lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )

Please take this into consideration for using the device.

VDD = −3 V

Duty

VIN: tr, tf < 5 ns

(Zout = 50 Ω)

Common Source

Ta = 25°C

VDD

OUT

−2.5 V

10 μs

50 Ω

(b) VIN

ton

90%

10%

−2.5 V

0 V

90%

10%

toff

tr tf

VDS

(

)

VDD

(a) Test circuit

D H

6 5 4

1 2 3

654

123

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SSM6P05FU

2007-11-01

(Q1, Q2 common)

Drain-Source on resistance

RDS (ON) (Ω)

Drain-Source on resistance

RDS (ON) (Ω)

Drain-Source voltage VDS (V)

ID – VDS

Drain current ID (mA)

Gate-Source voltage VGS (V)

ID – VGS

Drain current ID (mA)

RDS (ON) – ID

Drain-Source on resistance

RDS (ON) (Ω)

Gate-Source voltage VGS (V)

RDS (ON) – VGS

Ambient temperature Ta (°C)

RDS (ON) – Ta

Drain current ID (mA)

⎪Yfs⎪ – ID

Forward transfer admittance

⎪Yfs⎪ (mS)

0 −0.5 −1.0 −1.5 −2.0

−100

−200

−300

−400

−500

Common

Source

Ta = 25°C

VGS = −1.5 V

−1.7

−1.9

−2.1

−2.3

−2.5 −3−4 −10

0 −100 −200 −300 −400 −500

Common Source

Ta = 25°C

VGS = −4 V

−2.5 V

0 −2 −4 −6 −8 −10

Common Source

ID = −50 mA

Ta = 100°C

25°C

−25°C

−25 0 25 50 75 100 125 150

Common Source

VGS = −4 V, ID = −100 mA

−2.5 V, −50 mA

−10 −30 −50 −100 −300 −500 −1000

100

300

500

1000

Common Source

VDS = −3 V

Ta = 25°C

−0.01

0 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0

−0.1

−1

−10

−100

−1000

Common Source

VDS = −3 V

Ta = 100°C

−25°C

25°C

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SSM6P05FU

2007-11-01

(Q1, Q2 common)

Drain power dissipation PD* (mW)

Drain-Source voltage VDS (V)

IDR – VDS

Drain reverse current IDR (mA)

Drain-Source voltage VDS (V)

C – VDS

Capacitance C (pF)

Drain current ID (mA)

t – ID

Switching time t (ns)

Ambient temperature Ta (°C)

PD* – Ta

*: Total rating

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

−100

−200

−300

−400

−500

Common Source

VGS = 0

Ta = 25°C

IDR

−0.1 −0.3 −1 −3 −10 −30

100

Common Source

VGS = 0

f = 1 MHz

Ta = 25°C

Ciss

Coss

Crss

−1 −3 −10 −30 −100 −300

100

300

500

1000

Common Source

VDD = −3 V

VGS = 0~−2.5 V

Ta = 25°C

toff

ton

0 20 40 60 80 100 120 140 160

100

200

300

400

Mounted on FR4 board.

(25.4 mm × 25.4 mm × 1.6 t

Cu Pad: 0.32 mm2 × 6)

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SSM6P05FU

2007-11-01

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively “Product”) without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with

TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are

responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must

also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,

the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA

Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are

solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the

appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any

information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other

referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO

LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.

• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring

equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.

Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or

reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious

public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used

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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of

noncompliance with applicable laws and regulations.

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