© Semiconductor Components Industries, LLC, 2001
March, 2020 − Rev. 3
1Publication Order Number:
RHRG5060/D
Hyperfast Diode
50 A, 600 V
RHRG5060
Description
The RHRG5060 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast diodes
and is silicon nitride passivated ionimplanted epitaxial planar
construction. These devices are intended to be used
as freewheeling/ clamping diodes and diodes in a variety of switching
power supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power
loss in the switching transistors.
Features
•Hyperfast Recovery ( trr = 50 ns (@ IF = 50 A )
•Max Forward Voltage( VF = 2.1 V (@ TC = 25 °C )
•600 V Reverse Voltage and High Reliability
•Avalanche Energy Rated
•This Device is Pb−Free and is RoHS Compliant
Applications
•Switching Power Supplies
•Power Switching Circuits
•General Purpose
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 600 V
Working Peak Reverse Voltage VRWM 600 V
DC Blocking Voltage VR600 V
Average Rectified Forward Current
(TC = 93 °C)
IF(AV) 50 A
Repetitive Peak Surge Current
(Square Wave, 20 kHz)
IFRM 100 A
Nonrepetitive Peak Surge Current
(Halfwave 1 Phase, 60 Hz)
IFSM 500 A
Maximum Power Dissipation PD150 W
Avalanche Energy
(See Figure 10 and Figure 11)
EAVL 40 mJ
Operating and Storage Temperature TSTG, TJ−65 to
+175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
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JEDEC STYLE
TO−247
340CL
MARKING DIAGRAM
$Y&Z&3&K
RHRG5060
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
ANODE
CATHODE
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
RHRG5060 = Specific Device Code
1. Cathode 2. Anode
RHRG5060
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2
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Package Brand
RHRG5060 TO−247−2L RHRG5060
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Unit
VFInstantaneous Forward Voltage
(Pulse Width = 300 ms, Duty Cycle = 2%)
IF = 50 A 2.1 V
IF = 50 A,
TC = 150°C
1.7 V
IRInstantaneous Reverse Current VR = 600 V 250 mA
VR = 600 V
TC = 150°C
1.5 mA
trr Reverse Recovery Time (See Figure 9 )
Summation of ta + tb
IF = 1 A,
dlF/dt = 100 A/ms
45 ns
IF = 50 A,
dIF/dt = 100 A/ms
50 ns
taTime to Reach Peak Reverse Current (See Figure 9) IF = 50 A,
dIF/dt = 100 A/ms
25 ns
tbTime from Peak IRM to Projected Zero Crossing of IRM
Based on a Straight Line from Peak IRM Through 25%
of IRM (See Figure 9)
IF = 50 A,
dIF/dt = 100 A/ms
20 ns
Qrr Reverse Recovery Charge IF = 50 A,
dIF/dt = 100 A/ms
65 nC
CJJunction Capacitance VR = 10 V,
IF = 0 A
140 pF
RqJC Thermal Resistance Junction to Case 1.0 °C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
RHRG5060
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3
TYPICAL PERFORMANCE CURVES
Figure 1. Forward Current vs. Forward Voltage Figure 2. Reverse Current vs. Reverse Voltage
Figure 3. Trr, ta and tb Curves vs. Forward Current Figure 4. Trr, ta and tb Curves vs. Forward Current
IR, Reverse Current (mA)
VR, Reverse Voltage (V)
IF
, Forward Current (A)
VF
, Forward Voltage (V)
t, Recovery Time (ns)
IF
, Forward Current (A)
t, Recovery Times (ns)
IF
, Forward Current (A)
Figure 5. Trr, ta and tb Curves vs. Forward Current Figure 6. Current Derating Curve
IF(AV), Average Forward Current (A)
TC, Case Temperature (5C)
IF
, Forward Current (A)
t, Recovery Times (ns)
1
300
10
0 0.5 2.512 1.5 3
25oC
175oC100oC
100
060
0
400300200
100
0.01
0.1
1
10
1000
100 500
100oC
175oC
25oC
3000
ta
Trr
tb
1
0
100
150
125
5
0
75
50
10
25
TC = 100oC, dIF/dt = 100A/ms
50
10
0
100 125
75 175
150
20
30
40
DC
SQ. WAVE
25 50
ta
Trr
1
0
250
50
150
100
10
50 tb
200
TC = 175oC, dIF/dt = 100A/ms
1
0
40
60
50
50
Trr
tb
30
ta
20
10
10
TC = 25oC, dIF/dt = 100A/ms
RHRG5060
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4
TYPICAL PERFORMANCE CURVES (continued)
Figure 7. Junction Capacitance vs. Reverse Voltage
CJ, Junction Capacitance (pF)
VR, Reverse Voltage (V)
200
100
0
300
0 50 100 150 200
350
250
50
150
TEST CIRCUITS AND WAVEFORMS
Figure 8. Trr Test Circuit Figure 9. Trr Waveforms and Definitions
Figure 10. Avalanche Energy Test Circuit Figure 11. Avalanche Current and Voltage Waveforms
I = 1 A
L = 40 mH
R < 0.1 W
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL)−VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
IRM
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
GE
t1
t2
+
−
dt
dIF
IF
Trr
tatb
0
0.25IRM
DUT
CURRENT
SENSE
+
LR
VDD
−
VDD
Q1I
t0t1t2
IL
VAVL
t
IL
VGE AMPLITUDE AND
RG CONTROL dlF/dt
t1 AND t2 CONTROL IF
V
V
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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