HIGH SPEED SILICON SWITCHING DIODE AXIAL LEADCD1N4148
DO-35, 500mW
General purpose applications. Hermetically sealed glass and the glass passivated chip Provides
excellent stability.
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C otherwise specified)
DESCRIPTIONSYMBOLVALUEUNIT
Peak Repetitive Reverse Voltage VRRM80V
Reverse Voltage (Continuous) VR75V
Average Forward Current IF(AV)150mA
Forward Current (DC) IF200mA
Repetitive Peak Forward Current IFRM450mA
Non Repetitive Peak Surge Current tp=1usec IFSM2000mA
tp=1sec IFSM500mA
Power Dissipation PTA500mW
Derating Factor 2.85mW/deg C
Operating & Storage Junction Temperature Tj, Tstg-65 to +200deg C
Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTIONSYMBOLTEST CONDITIONMINTYPMAXUNIT
Forward Voltage VFIF=10mA--1.0V
Reverse Current IRVR=20V--500nA
VR=75V--20uA
Reverse Breakdown Voltage VBRIR=100uA80--V
IR=20uA75--V
DYNAMIC CHARACTERISTICS
Diode Capacitance CdVR=0V, f=1MHz--4.0pF
Forward Recovery Voltage VfrIF=50mA, tr=20ns--2.5V
Reverse Recovery Time trrIF=10mA, to IR=60mA--4.0ns
RL=100ohms
Measured @ IR=1mA
MARKING: Cathode band
+
4148
(
no bod
y
coat
)
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Data Sheet Page 1 of 3
DO-35 Glass Axial Package
DO-35, 52mm Taping Specification
On request also available in 26 mm Tape and Ammo Pack
Data Sheet Page 2 of 3
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Notes
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neitherdoesitconveyanylicenseunderitspatentrightsnorrightsofothers.Theseproductsarenotdesignedforuseinlife
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Data Sheet Page 3 of 3
