1. CATHODE
2. CATHODE
3. ANODE
32-TOS32-TOS32-TOS32-TOS32-TOS
(1) (3)
(2)
(UNITS: mm)
RECTRON USA 1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296
www.rectron.com
SEMICONDUCTOR
TECHNICAL SPECIFICATION
BAW56
RECTRON
SURFACE MOUNT, DUAL 1N4148 COMMON ANODE DIODE
Absolute Maximum Ratings (Ta=25°C)
Items Symbol Ratings Unit
Reverse Volta
g
eVRRM 85 V
Reverse
Recovery Time trr 4 ns
Forward Volta
g
e
@ If = 50 mA VF 1.0 V
Forward Current IF 215 mA
Junction Temp. Tj -55 to 150 °C
Storage Temp. Tstg -55 to 150 °C
Mechanical Data
Items Materials
Package SOT-23
Lead Frame 42 Alloy
Lead Finish Solder Plating
Bond Wire Au
Mold Resin Epoxy
Chip Silicon
Electrical Characteristics per Diode (Ta=25°C)
Ratings Symbol Ratings Unit
Reverse Breakdown Voltage IR= 100uA VBR 75 V
Repetitive Peak Reverse Voltage VRRM 85 V
Repetitive Peak Forward Current IFRM 450 mA
Forward Voltage
IF= 1mA
IF= 10mA
IF= 50mA
IF= 150mA
VF 715
855
1000
1250
mV
Reverse Current
VR= 75V
VR= 25V (Tj= 150°C)
VR= 75V (Tj= 150°C)
IR 1.0
30
50
uA
Junction Capacitance VR = 0 V, f = 1MHz Cj 2.0 pF
Reverse Recovery Time IF= IR= 10mA; RL= 100 ohms trr 4 ns
Thermal Resistance (junction to ambient) RΘJA 500 °C/W
MAXIMUM RA TINGS
(at T A = 25
o
C unless otherwise noted)
PARAMETER
Non-repelitive Peak Forward Current
SYMBOL
I
F
I
FSM
UNITS
mA
Amps
Amps
0
C
0
C
CONDITIONS
single diode loaded (note 1)
double diode loaded (note 1)
Max
215
125
square wave,Tj=25 prior to surge
t=1us
t=1ms
t=1s
4
1
0.5 Amps
Total Power Dissipation P
LOT
250
T
amb
= 25 mW
Note: 1.Device mounted on an FR4 printed-circuit board.
Continuous Forward Current
RATING AND CHARACTERISTIC CURVES ( BAW56 )
FIG. 1 - Maximum permissible continuous forward
current as a function of ambient temperature
FIG. 4 - Reverse current as a function of junction temperature
FIG. 2 - Forward current as a function of forward voltage
225
300
200
100
050
1400
100
200
200
100
10000
1000
100
0 100 200
10
0
FIG. 3 - Maximum permissible non-repetitive peak forward current as a function of pulse duration
100
10
1
110 100 1000 10000
0.1
50
150
150
single diode loaded
double diode loaded
IF
(mA)
I
F
(mA)
Tj=25
Tj=125
IFSM
(A)
100000
Tj ( )
I
R
(nA)
FIG. 5 - Diode capacitance as a function of reverse voltage ;
0
0.5
1.0
1.5
2.0
2.5
0510 15 20 25
VR(V)
Gd
(pF)
VR=75V
max 75V
25V
typ
typ
f
=1MHz; Tj=25
typical values
tp
(uS)
200 600 1000
0
600
500
400
700
V
F
(mV)
Tj=25 maximum values
