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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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DF005S2 - DF10S2 — Bridge Rectifier
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
DF005S2 - DF10S2 Rev. 1. 2
June 2015
DF005S2 - DF10S2
Bridge Rectifier
Features
• Maximum Surge Rating: IFSM = 85 A
I2t = 30 A2Sec
• Optimized VF: Typical 0.93 V at 2 A, 25°C
• DF10S Socket Compatible
• Glass Passivated Junctions
• Lead Free Compliant to EU RoHS 2002/95/EU Directives
• Green Molding Compound: IEC61249
• Qualified with IR Reflow and Wave Soldering
Ordering Information
Part Number Top Mark Package Packing Method
DF005S2 DF005S2 SDIP 4L Tape and Reel
DF01S2 DF01S2 SDIP 4L Tape and Reel
DF02S2 DF02S2 SDIP 4L Tape and Reel
DF04S2 DF04S2 SDIP 4L Tape and Reel
DF06S2 DF06S2 SDIP 4L Tape and Reel
DF08S2 DF08S2 SDIP 4L Tape and Reel
DF10S2 DF10S2 SDIP 4L Tape and Reel
Description
With the ever-pressing need to improve power supply
efficiency, improve surge rating, improve reliability, and
reduce size, the DFxS2 family sets a new standard in
performance.
The new design offers an improved surge rating of 85 A.
This is especially important when striving to improve reli-
ability and increase efficiency. High efficiency designs
strive to reduce circuit resistance, which, unfortunately
can result in increased inrush surge. As such higher
surge current ratings can be required to maintain or
improve reliability.
The design al so of fers improved effi ciency by achieving a
2 A VF of 1.1 V maximum at 25°C. This lower VF also
supports cooler and more efficient operation.
Finally, the DFxS2 achieves all this in a SDIP surface
mount form factor, reducing board space and volumetric
requirements vs. competitive devices.
+
-
~
~
IN
OUT
SDIP
DF005S2 - DF10S2 — Bridge Rectifier
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
DF005S2 - DF10S2 Rev. 1. 2 2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Thermal Characteristics(1)
Note:
1. The ther mal resistances ( R θJA & ψJL) are characterized with the device mounted o n the following FR4 printed ci rcu it
boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm.
Heating effect from adjacent dice is considered and only two dices are powered at the same time.
Symbol Parameter Value Unit
DF005S2DF01S2DF02S2DF04S2DF06S2DF08S2DF10S2
VRRM Maximum Recurrent Peak
Reverse Voltage 50 100 200 400 600 800 1000 V
VRMS Maximum RMS Bridge Input
Voltage 35 70 140 280 420 560 700 V
VDC Maximum DC Blocking
Voltage 50 100 200 400 600 800 1000 V
IF(AV) Maximum Average Forward
Current TA = 40°C2.0 A
IFSM
Peak Forward Surge Current
8.3 ms Single Half-Sine
Wave Superimposed on
Rated Load(JEDEC Method)
85 A
TSTG Storage Temperature Range -55 to +150 °C
TJOperating Junction
Temperature Range -55 to +150 °C
Symbol Parameter Conditions Max. Unit
RθJA Thermal Resistance,
Junction to Ambient
Single-Di e Measurement
(Maximum Land Pattern: 13 x 13 mm) 60
°C/W
Multi-Di e Measurement
(Maximum Land Pattern: 13 x 13 mm) 50
Multi-Di e Measurement
(Minimum Land Pattern: 1.3 x 1.5 mm) 100
ψJL Thermal Characterization
Parameter, Junction to Lead Single-Die Measurement
(Maximum and Minimum Land Pattern) 25 °C/W
Figure 1. Maximum Pads of 2 oz Copper Figure 2. Minimum Pads of 2 oz Copper
F
F
S
S
F
F
S
S
DF005S2 - DF10S2 — Bridge Rectifier
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
DF005S2 - DF10S2 Rev. 1. 2 3
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Typ. Max. Unit
VFForward Voltage Drop per Bridge Element IF = 2.0 A 1.1 V
IRDC Reverse Current
at Rated DC Blocking Voltage TJ = 25°C3
μA
TJ = 125°C 500
I2t Rating for Fusing (t < 8.3 ms) 30 A2S
CJJunction Capacitance VR = 4.0 V,
f = 1.0 MHz 23 pF
DF005S2 - DF10S2 — Bridge Rectifier
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
DF005S2 - DF10S2 Rev. 1. 2 4
Typical Performance Characteristics
Figure 3. Typical Inst anta neous Forward
Characteristics Figure 4. Typical Reverse Characteris tics
Figure 5. Maximum A verage Current vs.
Ambient Temperature Figure 6. Peak Forward Su rge Current vs.
Number of Cycles at 60Hz
Figure 7. Typical Junction Capacitance
0.01
0.1
1
10
0.20.30.40.50.60.70.80.91.01.11.2
TJ= -55 oC
TJ=125 oC
TJ=150 oC
TJ=25 oC
Forward Voltage Drop, VF[V]
Forward Current, IF[A]
200 400 600 800 1000
1E-3
0.01
0.1
1
10
100
TJ=-55 oC
TJ=150 oC
TJ=25 oC
Reverse Current, IR[μA]
Reve rse Voltage, VR[V]
TJ=125 oC
40 60 80 100 120 140 160 180 200
0.0
0.5
1.0
1.5
2.0
Max Pad (Sigle die)
Average Current [DC]
Am bient Temperature [oC]
0 20406080100
0
10
20
30
40
50
60
70
80
90
100
IFSM, Peak Forward Surge Current [A]
Number of Cycles at 60 Hz
0 1020304050
0
5
10
15
20
25
30
35
40
f = 1 MHz
Juntion Capaci t ance, CJ[pF]
Reverse Voltage, VR[V]
DF005S2 - DF10S2 — Bridge Rectifier
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
DF005S2 - DF10S2 Rev. 1. 2 5
Physical Dimensions
Figure 8. 4-LEAD, SDIP, 6.5 MM WIDE
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®
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www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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