BYV12 / 13 / 14 / 15 / 16 Vishay Semiconductors Fast Avalanche Sinterglass Diode Features * * * * * * Glass passivated junction Hermetically sealed package e2 Soft recovery characteristic Low reverse current Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 949539 Applications Mechanical Data Fast rectification and switching diode for example for TV-line output circuits and switch mode power supply Case: SOD-57 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 369 mg Parts Table Part Type differentiation Package BYV12 VR = 100 V; IFAV = 1.5 A SOD-57 BYV13 VR = 400 V; IFAV = 1.5 A SOD-57 BYV14 VR = 600 V; IFAV = 1.5 A SOD-57 BYV15 VR = 800 V; IFAV = 1.5 A SOD-57 BYV16 VR = 1000 V; IFAV = 1.5 A SOD-57 Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Peak forward surge current Repetitive peak forward current Document Number 86039 Rev. 1.6, 13-Apr-05 Test condition see electrical characteristics tp = 10 ms, half sinewave Part Symbol Value Unit BYV12 VR = VRRM 100 V BYV13 VR = VRRM 400 V BYV14 VR = VRRM 600 V BYV15 VR = VRRM 800 V BYV16 VR = VRRM 1000 V IFSM 40 A IFRM 9 A www.vishay.com 1 BYV12 / 13 / 14 / 15 / 16 Vishay Semiconductors Parameter Test condition Part Symbol Value IFAV 1.5 A Tj = Tstg - 55 to + 175 C ER 10 mJ = 180 , Tamb = 25 C Average forward current Junction and storage temperature range I(BR)R = 0.4 A Non repetitive reverse avalanche energy Unit Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Test condition Junction ambient Symbol Value Unit l = 10 mm, TL = constant RthJA 45 K/W on PC board with spacing 25 mm RthJA 100 K/W Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Symbol Max Unit 1.5 V 1 5 A 60 150 A trr 300 ns Qrr 200 nC Forward voltage IF = 1 A VF Reverse current VR = VRRM IR VR = VRRM, Tj = 150 C IR Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A Reverse recovery charge IF = 1 A, di/dt = 5 A/s Min Typ. 240 120 l T j - Junction Temperature ( C ) RthJA Therm. Resist. Junction/Ambient (K/W) Typical Characteristics (Tamb = 25 C unless otherwise specified) l 100 80 TL= constant 60 40 20 V RRM 160 VR BYV12 120 BYV16 BYV14 80 BYV13 BYV15 40 0 0 0 5 94 9101 10 15 20 25 30 l - Lead Length ( mm ) Figure 1. Typ. Thermal Resistance vs. Lead Length www.vishay.com 2 RthJA = 100 K/W 200 94 9517 1000 0 200 400 600 800 V R ,VRRM - Reverse / Repetitive Peak Reverse Voltage ( V ) Figure 2. Junction Temperature vs. Reverse/Repetitive Peak Reverse Voltage Document Number 86039 Rev. 1.6, 13-Apr-05 BYV12 / 13 / 14 / 15 / 16 Vishay Semiconductors 1 Tj = 175 C 0.1 0.01 I F Tj = 25 C 0.001 0 0.5 1.0 1.5 2.0 2.5 350 PR -Limit @100 % VR 300 250 200 150 PR -Limit @80 % VR 100 50 0 25 50 75 100 125 150 175 T - Junction Temperature ( C ) 16378 Figure 6. Max. Reverse Power Dissipation vs. Junction Temperature Figure 3. Forward Current vs. Forward Voltage 40 V R = VRRM half sinewave R thJA = 45 K/W l = 10 mm 1.4 1.2 1.0 0.8 0.6 0.4 R thJA = 100 K/W PCB: d = 25 mm 0.2 CD - Diode Capacitance ( pF ) 1.6 I FAV - Average Forward Current ( A ) V R = VRRM 400 3.0 V F - Forward Voltage ( V ) 16375 450 PR - Reverse Power Dissipation ( mW ) - Forward Current ( A ) 10 0 0 Tamb - Ambient Temperature ( C ) 16376 16379 Figure 4. Max. Average Forward Current vs. Ambient Temperature 30 25 20 15 10 5 0 0.1 20 40 60 80 100 120 140 160 180 f = 1 MHz 35 1 10 100 V R - Reverse Voltage ( V ) Figure 7. Diode Capacitance vs. Reverse Voltage 1000 I R - Reverse Current ( A ) V R = VRRM 100 10 1 25 16377 50 75 100 125 150 175 Tj - Junction Temperature (C ) Figure 5. Reverse Current vs. Junction Temperature Document Number 86039 Rev. 1.6, 13-Apr-05 www.vishay.com 3 BYV12 / 13 / 14 / 15 / 16 Z thp - Thermal Resistance f. Pulse Cond. (K/W Vishay Semiconductors 1000 VRRM =1000 V RthJA = 100 K/W 100 Tamb =25C Tamb =45C Tamb = 60C 10 Tamb =70 C 1 10 -5 Tamb =100 C 10 -4 10 -3 10 -2 10 -1 10 0 101 10 0 10 1 I FRM - Repetitive Peak Forward Current ( A ) tp - Pulse Length ( s ) 94 9522 Figure 8. Thermal Response Package Dimensions in mm (Inches) Sintered Glass Case SOD-57 3.6 (0.140)max. 94 9538 Cathode Identification ISO Method E 0.82 (0.032) max. 26(1.014) min. www.vishay.com 4 4.0 (0.156) max. 26(1.014) min. Document Number 86039 Rev. 1.6, 13-Apr-05 BYV12 / 13 / 14 / 15 / 16 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 86039 Rev. 1.6, 13-Apr-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1