BYV12 / 13 / 14 / 15 / 16
Document Number 86039
Rev. 1.6, 13-Apr-05
Vishay Semiconductors
www.vishay.com
1
949539
Fast Avalanche Sinterglass Diode
Features
• Glass passivated junction
• Hermetically sealed package
• Soft recovery characteristic
• Low reverse current
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Fast rectification and switching diode for example for
TV-line output circuits and switch mode power supply
Mechanical Data
Case: SOD-57 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Part Type differentiation Package
BYV12 VR = 100 V; IFAV = 1.5 A SOD-57
BYV13 VR = 400 V; IFAV = 1.5 A SOD-57
BYV14 VR = 600 V; IFAV = 1.5 A SOD-57
BYV15 VR = 800 V; IFAV = 1.5 A SOD-57
BYV16 VR = 1000 V; IFAV = 1.5 A SOD-57
Parameter Test condition Part Symbol Value Unit
Reverse voltage = Repetitive
peak reverse voltage
see electrical characteristics BYV12 VR = VRRM 100 V
BYV13 VR = VRRM 400 V
BYV14 VR = VRRM 600 V
BYV15 VR = VRRM 800 V
BYV16 VR = VRRM 1000 V
Peak forward surge current tp = 10 ms, half sinewave IFSM 40 A
Repetitive peak forward current IFRM 9A
e2
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Document Number 86039
Rev. 1.6, 13-Apr-05
BYV12 / 13 / 14 / 15 / 16
Vishay Semiconductors
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Average forward current ϕ = 180 °, Tamb = 25 °C IFAV 1.5 A
Junction and storage
temperature range
Tj = Tstg - 55 to + 175 °C
Non repetitive reverse
avalanche energy
I(BR)R = 0.4 A ER10 mJ
Parameter Test condition Symbol Value Unit
Junction ambient l = 10 mm, TL = constant RthJA 45 K/W
on PC board with spacing
25 mm
RthJA 100 K/W
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 1 A VF1.5 V
Reverse current VR = VRRM IR15µA
VR = VRRM, Tj = 150 °C IR60 150 µA
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr 300 ns
Reverse recovery charge IF = 1 A, di/dt = 5 A/µsQ
rr 200 nC
Parameter Test condition Part Symbol Value Unit
Figure 1. Typ. Thermal Resistance vs. Lead Length
94 9101
ll
TL= constant
0
0
20
40
60
80
120
R Therm. Resist. Junction/Ambient (K/W)
thJA
l - Lead Length ( mm )
51015 25
30
20
100
Figure 2. Junction Temperature vs. Reverse/Repetitive Peak
Reverse Voltage
0 200 400 600 800
0
40
80
120
160
240
T - Junction Temperature ( C )
j
VR,VRRM - Reverse / Repetitive Peak Reverse
Voltage(V)
1000
94 9517
°
200
VRRM
RthJA = 100 K/W
VR
BYV12
BYV13
BYV14
BYV15
BYV16
BYV12 / 13 / 14 / 15 / 16
Document Number 86039
Rev. 1.6, 13-Apr-05
Vishay Semiconductors
www.vishay.com
3
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Max. Average Forward Current vs. Ambient Temperature
Figure 5. Reverse Current vs. Junction Temperature
I – Forward Current(A)
0.001
0.01
0.1
1
10
0 0.5 1.0 1.5 2.0 2.5 3.0
V
F
– Forward Voltage(V)
16375
F
T
j
= 175°C
T
j
=25°C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
16376
0 20 40 60 80 100 120 140 160 180
T
amb
- Ambient Temperature ( °C)
I - Average Forward Current ( A )
FAV
R
thJA
= 45 K/W
l=10mm
R
thJA
= 100 K/W
PCB:d=25mm
V
R
=V
RRM
half sinewave
16377
V
R
=V
RRM
1
10
100
1000
25 7550 100 125 150 175
T
j
- Junction Temperature (°C)
I - Reverse Current ( µA)
R
Figure 6. Max. Reverse Power Dissipation vs. Junction
Temperature
Figure 7. Diode Capacitance vs. Reverse Voltage
16378
0
50
100
150
200
250
300
350
400
450
25 50 75 100 125 150 175
T - Junction Temperature (°C)
P - Reverse Power Dissipation ( mW )
R
P
R
-Limit
@100 % V
R
P
R
-Limit
@80%V
R
V
R
=V
RRM
0
5
10
15
20
25
30
35
40
16379
f=1MHz
0.1 1 10 100
V
R
- Reverse Voltage(V)
C - Diode Capacitance ( pF )
D
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Document Number 86039
Rev. 1.6, 13-Apr-05
BYV12 / 13 / 14 / 15 / 16
Vishay Semiconductors
Package Dimensions in mm (Inches)
Figure 8. Thermal Response
1
10
100
1000
Z -Thermal Resistance f. Pulse Cond. (K/
W
thp
tp- Pulse Length(s)
94 9522
10–5 10–4 10–3 10–2 10–1 100101
IFRM - Repetitive Peak
Forward Current
(
A
)
100101
VRRM =1000 V
RthJA = 100 K/W
Tamb =25°C
Tamb =45°C
Tamb =60°C
Tamb =70 °C
Tamb =100°C
Cathode Identification
0.82 (0.032) max.
Sintered Glass Case
SOD-57
94 9538
26(1.014) min. 26(1.014) min.
ISO Method E
3.6 (0.140)max.
4.0 (0.156) max.
BYV12 / 13 / 14 / 15 / 16
Document Number 86039
Rev. 1.6, 13-Apr-05
Vishay Semiconductors
www.vishay.com
5
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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