2007-06-01
1
BG3130...
1
623
54
DUAL N-Channel MOSFET Tetrode
• Two gain controlled input stage for UHF
and VHF -tuners e.g. (NTSC, PAL)
• Two AGC amplifiers in one single package
• Integrated gate protection diodes
• High AGC-range, low noise figure, high gain
• Improved cross modulation at gain reduction
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BG3130
BG3130R
G2
G1
GND
AGC
RF
Input
Drain RF Output
+ DC
VGG
RG1
)
*
"
#$
!
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Package Pin Configuration Marking
BG3130
BG3130R SOT363
SOT363 1=G1*
1=G1* 2=G2
2=S 3=D*
3=D* 4=D**
4=D** 5=S
5=G2 6=G1**
6=G1** KAs
KHs
* For amp. A; ** for amp. B
180° rotated tape loading orientation available
2007-06-01
2
BG3130...
Maximum Ratings
Parameter Symbol Value Unit
Drain-source voltage VDS 8 V
Continuous drain current ID25 mA
Gate 1/ gate 2-source current ±IG1/2SM 1
Gate 1/ gate 2-source voltage ±VG1/G2S 6 V
Total power dissipation Ptot 200 mW
Storage temperature Tstg -55 ... 150 °C
Channel temperature Tch 150
Thermal Resistance
Parameter Symbol Value Unit
Channel - soldering point1) Rthchs ≤ 280 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
2007-06-01
3
BG3130...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage
ID = 10 µA, VG1S = 0 V, VG2S = 0 V V(BR)DS 12 - - V
Gate1-source breakdown voltage
+IG1S = 10 mA, VG2S = 0 V, VDS = 0 V +V(BR)G1SS 6 - 15
Gate2-source breakdown voltage
+IG2S = 10 mA, VG1S = 0 V, VDS = 0 V +V(BR)G2SS 6 - 15
Gate1-source leakage current
VG1S = 6 V, VG2S = 0 V +IG1SS - - 50 µA
Gate2-source leakage current
VG2S = 8 V, VG1S = 0 V, VDS = 0 V +IG2SS - - 50 nA
Drain current
VDS = 5 V, VG1S = 0 V, VG2S = 4.5 V IDSS - - 10 µA
Drain-source current
VDS = 5 V, VG2S = 4 V, RG1 = 120 kΩIDSX - 10 - mA
Gate1-source pinch-off voltage
VDS = 5 V, VG2S = 4 V, ID = 20 µA VG1S(p) - 0.7 - V
Gate2-source pinch-off voltage
VDS = 5 V, ID = 20 µA VG2S(p) - 0.6 -
2007-06-01
4
BG3130...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics VDS = 5V, VG2S = 4V, (ID = 14 mA) (verified by random sampling)
Forward transconductance gfs - 33 - mS
Gate1 input capacitance
f = 10 MHz Cg1ss - 1.9 - pF
Output capacitance
f = 10 MHz Cdss - 1.1 -
Power gain
f = 800 MHz
f = 45 MHz
Gp
-
-
24
31
-
-
dB
Noise figure
f = 800 MHz
f = 45 MHz
F
-
-
1.3
1.7
-
-
dB
Gain control range
VG2S = 4 ... 0 V, f = 800 MHz ∆Gp45 - -
Cross-modulation k=1%, fw=50MHz, funw=60MHz
AGC = 0 dB
AGC = 10 dB
AGC = 40 dB
Xmod
90
-
96
-
87
100
-
-
-
-
2007-06-01
5
BG3130...
Total power dissipation Ptot = ƒ(TS)
amp. A = amp. B
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
mW
300
Ptot
Drain current ID = ƒ(IG1)
VG2S = 4V
amp. A = amp. B
0 10 20 30 40 50 60 70 80 µA 100
IG1
0
5
10
15
20
mA
30
ID
Output characteristics ID = ƒ(VDS)
amp. A = amp. B
0 2 4 6 8 10 V14
VDS
0
2
4
6
8
10
12
14
16
18
mA
22
ID
1.3V
1.2V
1.1V
1V
0.8V
Gate 1 current IG1 = ƒ(VG1S)
VDS = 5V, VG2S = Parameter
amp. A = amp. B
0 0.4 0.8 1.2 1.6 2 2.4 V3.2
IG1
0
25
50
75
100
125
150
175
µA
225
VG1S
4V
3.5V
3V
2.5V
2V
2007-06-01
6
BG3130...
Gate 1 forward transconductance
gfs = ƒ(ID), VDS = 5V, VG2S = Parameter
amp. A = amp. B
0 4 8 12 16 20 24 28 mA 36
ID
0
5
10
15
20
25
30
mS
40
gfs
2V
2.5V
3V
3.5V
4V
Drain current ID = ƒ(VG1S)
VDS = 5V, VG2S = Parameter
amp. A = amp. B
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V2
VG1S
0
4
8
12
16
20
24
µA
32
ID
4V
3V
2.5V
2V
1.5V
Drain current ID = ƒ(VGG) amp.A=amp.B
VDS = 5V, VG2S = 4V, RG1 = 120kΩ
(connected to VGG, VGG=gate1 supply voltage)
0 0.5 1 1.5 2 2.5 3 3.5 4 V5
VGG
0
1
2
3
4
5
6
7
8
9
10
11
mA
13
ID
Drain current ID = ƒ(VGG)
VG2S = 4V, RG1 = Parameter in kΩ
amp. A = amp. B
012345V7
VGG=VD
S
0
2
4
6
8
10
12
14
16
18
mA
22
ID
120
100
80
70
2007-06-01
7
BG3130...
Crossmodulation Vunw = (AGC)
VDS = 5 V, Rg1 = 68 kΩ
0 10 20 30 dB 50
AGC
80
90
100
dBµV
120
Vunw
2007-06-01
8
BG3130...
Crossmodulation test circuit
RG1
4n7
4n7
RL
50Ω
50 Ω
RGEN
50Ω
VGG
R1
10kΩ
VAGC VDS
4n7
4n7
2.2 uH
Semibiased
2007-06-01
9
BG3130...
Package SOT363
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
BCR108S
Type code
Pin 1 marking
Laser marking
0.3
0.70.9
0.65
0.65
1.6
0.2
4
2.15 1.1
8
2.3
Pin 1
marking
+0.1
0.2
1
6
23
5 4
±0.2
2
+0.1
-0.05
0.15
±0.1
1.25
0.1 MAX.
0.9
±0.1
A
-0.05
6x 0.1
M
0.650.65
2.1
±0.1
0.1
0.1 MIN.
M
0.2 A
Pin 1
marking
2007-06-01
10
BG3130...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Infineon:
BG3130H6327XTSA1