©2004 Fairchild Semiconductor Corporation
June 2004
RMPA39000 Rev. D
RMPA39000
RMPA39000
37–40 GHz GaAs MMIC Power Amplifier
General Description
The Fairchild Semiconductor RMPA39000 is a high
efficiency power amplifier designed for use in point to point
and point to multi-point radios, and various communi-
cations applications. The RMPA39000 is a 3-stage GaAs
MMIC amplifier utilizing our advanced 0.15µm gate length
Power PHEMT process and can be used in conjunction
with other driver or power amplifiers to achieve the required
total power output.
Features
24dB small signal gain (typ.)
29dBm saturated power out (typ.)
Circuit contains individual source vias
Chip size 4.28mm x 2.90mm x 50µm
Absolute Ratings
Symbol Parameter Ratings Units
Vd Positive DC Voltage (+5V Typical) +6 V
Vg Negative DC Voltage -2 V
Vdg Simultaneous (Vd–Vg) +8 V
I
D
Positive DC Current 1092 mA
P
IN
RF Input Power (from 50
source) +20 dBm
T
C
Operating Baseplate Temperature -30 to +85 °C
T
STG
Storage Temperature Range -55 to +125 °C
R
JC
Thermal Resistance (Channel to Backside) 17 °C/W
Device
©2004 Fairchild Semiconductor Corporation RMPA39000 Rev. D
RMPA39000
Electrical Characteristics
50
system, Vd = +5V, Quiescent current (Idq) = 700mA
Note:
1. Typical range of the negative gate voltage is -0.5V to 0.0V to set typical Idq of 700mA.
Parameter Min Typ Max Units
Frequency Range 37 40 GHz
Gain Supply Voltage (Vg)
1
-0.15 V
Gain Small Signal at Pin = 0dBm 20 24 dB
Gain Variation vs. Frequency ±1 dB
Power Output at 1dB Compression 28 dBm
Power Output Saturated (Pin = +13dBm) 27.5 29 dBm
Drain Current at Pin = 0dBm 700 mA
Drain Current at P1dB Compression 730 mA
Drain Current at Psat (Pin = +13dBm) 750 mA
Power Added Efficiency (PAE) at P1dB 17 %
OIP3 (17dBm/Tone) (10 MHz Tone Sep.) 36 dBm
Input Return Loss (Pin = -10dBm) 8 dB
Output Return Loss (Pin = -10dBm) 7 dB
©2004 Fairchild Semiconductor Corporation RMPA39000 Rev. D
RMPA39000
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with
gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of
bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of
wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges
through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for
appropriate stress relief. The RF input and output bonds should be typically 12 mils long corresponding to a typical 2 mil gap
between the chip and the substrate material.
Figure 1. Functional Block Diagram
Figure 2. Chip Layout and Bond Pad Locations
(Chip Size is 4.28mm x 2.90mm x 50µm. Back of chip is RF and DC Ground)
MMIC CHIP
DRAIN SUPPLY (Vd = +5V)
(VDA & VDB)
RF OUT
RF IN
GROUND
(Back of the Chip) GATE SUPPLY
(VGA & VGB)
1.475
2.598
2.490
1.295
1.655
0.0 0.202 4.141
0.0
4.280
0.102
0.352
0.370
2.580
4.002
Dimensions in mm
©2004 Fairchild Semiconductor Corporation RMPA39000 Rev. D
RMPA39000
RF IN RF OUT
10000pF
10000pF
BOND WIRE Ls
100pF
10
L
L
L
L
0pF
DRAIN SUPPLY (Vd = +5V)
(Connect to both VDA & VDB)
GATE SUPPLY (Vg)
(VGA and/or VGB)
GROUND
(Back of Chip)
MMIC CHIP
BOND WIRE Ls
Figure 3. Recommended Application Schematic Circuit Diagram
©2004 Fairchild Semiconductor Corporation RMPA39000 Rev. D
RMPA39000
Vd
(Positive)
100 pF 100 pF
100 pF
100 pF
10,000 pF 10,000 pF
10,000 pF
10,000 pF
Vg
(Negative)
Vg
(Negative) Vd
(Positive)
RF
Input RF
Output
5mil Thick
Alumina
505 mil Thick
Alumina
50
2 mil Gap
L< 0.015"
(4 Plcs)
Die-Attach
80Au/20Sn
Note:
Use 0.003" x 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Vd should be biased from 1 supply on both sides as shown. Vg can be biased from either or both sides from 1 supply.
Figure 4. Recommended Assembly and Bonding Diagram
©2004 Fairchild Semiconductor Corporation RMPA39000 Rev. D
RMPA39000
C1
0.1µF
C2
0.47µF
LM2941T
U1A
7400
R1
3.0k
R3
1.0k
D2
D1N6098
+6V
D3
D1N6098
+2.62V
R4
1.2k
*
R2
6.8k
U2 0
C5
0.1µF
MMIC_–VG
0
C3
22µF
R6
1k R5
3k 0
0
C4
0.1µFR7
8.2k
*Adj. For –Vg
–5V Off:
–5V Off: +3.33V
+1.80V
*
0
0
0
R8
1.0k
0
1
2
3
0
4
2
1
5
3
–5V
MMIC_+VDD
CNT
IN
GND OUT
ADJ
AD820/AD
+
V-
V+
Recommended Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE
DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to
properly test the amplifier.
Step 1:
Turn off RF input power.
Step 2:
Connect the DC supply grounds to the ground of
the chip carrier. Slowly apply negative gate bias supply
voltage of -1.5V to Vg.
Step 3:
Slowly apply positive drain bias supply voltage of
+5V to Vd.
Step 4:
Adjust gate bias voltage to set the quiescent
current of Idq = 700mA.
Step 5:
After the bias condition is established, the RF input
signal may now be applied at the appropriate frequency
band.
Step 6:
Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
Note:
An example auto bias sequencing circuit to apply
negative gate voltage and positive drain voltage for the
above procedure is shown below.
Figure 5. Application Information Auto-Bias Circuit
©2004 Fairchild Semiconductor Corporation RMPA39000 Rev. D
RMPA39000
22.0
22.5
23.0
23.5
24.0
24.5
25.0
36.5 37.0 37.5 38.0 38.5 39.0 39.5 40.0 40.5
36.5 37.0 37.5 38.0 38.5 39.0 39.5 40.0 40.5
28.0
28.5
29.0
29.5
30.0
FREQUENCY (GHz)
Pout (dBm)
RMPA39000 Saturated Pout vs. Frequency
Vd = 5V, Id = 700mA
FREQUENCY (GHz)
GAIN (dB)
RMPA39000 Gain vs. Frequency
Vd = 5V, Id = 700mA
Typical Characteristics
©2004 Fairchild Semiconductor Corporation RMPA39000 Rev. D
RMPA39000
30
25
20
15
10
5
20
15
10
5
0
-5
-20 -15 -10 -5 0 5 10 15 20
Pout Max: 27.98dBm
GAIN
Pout PAE
COMP
X
X
X
X
X
-30
-20
-10
0
10
20
30
20 25 30 35 40 45 50
S11
S21
S22
Pin (dBm)
Pout (dBm)
GAIN & COMP (dB), PAE (%)
Output Power, Power Added Efficiency, Gain and Compression
Bias Conditions: Vd = 5V, Iq = 700mA, F = 37GHz
FREQUENCY (GHz)
Sij (dB)
RMPA39000 S-Parameters vs. Frequency
Vd = 5V, Idq = 700mA
Typical Characteristics
(Continued)
©2004 Fairchild Semiconductor Corporation RMPA39000 Rev. D
RMPA39000
32
33
34
35
36
37
38
10 11 12 13 14 15 16 17 18 19
39GHz
38GHz
37GHz
40GHz
20 21 22 23 24 25 26 27 28
Pout/TONE (dBm)
OIP3 (dBm)
RMPA39000 OIP3 vs. Output Power/Tone
Vd = 5V, Idq = 700mA, Tone Sep 10 MHz
Typical Characteristics
(Continued)
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
Full Production
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