BCV27 — NPN Darlington Transistor
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
BCV27 Rev. 1 .1.0
October 2014
BCV27
NPN Darlington Transistor
Ordering Information
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating co nd iti ons and stressing the part s to the se lev el s i s n ot re co mme nded. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Part Number Marking Package Packing Method
BCV27 FF SOT-23 3L Tape and Reel
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 30 V
VCBO Collector- Base Voltage 40 V
VEBO Emitter-Base Voltage 10 V
ICCollector Current - Continuous 1.2 A
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Description
This device is designed for applications requiring
extremely high c urrent gai n at coll ector cur rent s to 1. 0 A.
Sourced from proces s 05.
SOT-23
Mark: FF
C
B
E
BCV27 — NPN Darlington Transistor
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
BCV27 Rev. 1 .1.0 2
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Max. Unit
PDTotal Device Dissipation 350 mW
Derate Above 25°C 2.8 mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
V(BR)CEO Collector-Emitter Breakdo w n Voltage IC = 10 mA, IB = 0 30 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 nA, IC = 0 10 V
ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 0.1 μA
IEBO Emitter Cut-Off Current VEB = 10 V, IC = 0 0.1 μA
hFE DC Current Gain IC = 1.0 mA, VCE = 5.0 V 4000
IC = 10 mA, VCE = 5.0 V 10000
IC = 100 mA, VCE = 5.0 V 20000
VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.0 V
VBE(sat) Base-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V
fTCurrent Gain - Bandwidth Product IC = 30 mA, VCE = 5.0 V,
f = 100 MHz 220 MHz
CcCollector Capacitance VCB = 30 V, IE = 0,
f = 1.0 MHz 3.5 pF
BCV27 — NPN Darlington Transistor
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
BCV27 Rev. 1 .1.0 3
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain vs.
Collector Current Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation V olt age vs.
Collector Current Figure 4. Base Emitter On Voltage vs.
Collector Current
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature Figure 6. Collector-Emitter Breakdown Voltage with
Resistance Between Emitter-Base
0.001 0.01 0.1 1
0
50
10 0
15 0
20 0
25 0
I - COLLECTOR CURRENT (A)
h - TYPICAL PULSED CU RRENT GAIN (K)
C
FE
25 °C
125 °C
- 40 °C
V = 5V
CE
1 10 100 1000
0
0. 4
0. 8
1. 2
1. 6
I - COLLECTOR CURRENT (mA)
V - COLLECTOR EM ITTE R VOLTAGE (V)
C
CESAT
25°C
- 40 °C
125 °C
β= 1000
1 10 100 1000
0
0. 4
0. 8
1. 2
1. 6
2
I - COLLECTOR CURRE NT (mA)
V - BASE EMITTER VOLTAGE (V)
C
BESAT
25 °C
- 40 °C
125 °C
β= 1000
1 10 100 1000
0
0. 4
0. 8
1. 2
1. 6
2
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BEON
V = 5V
CE
- 40 °C
25 °C
125 °C
25 50 75 100 125
0.01
0. 1
1
10
10 0
T - AMBIE NT TEMPERATURE ( C)
I - C O L LE CTOR CU RR EN T (n A)
A
CBO
°
V = 30V
CB
0.1 1 10 100 1000
59.5
60
60.5
61
61.5
62
62.5
RESISTANCE (k )
BV - BREAKDOWN VOLTAGE (V)
Ω
CER
BCV27 — NPN Darlington Transistor
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
BCV27 Rev. 1 .1.0 4
Typical Performance Characteristics (Continued)
Figure 7. Input and Output Capacitance vs.
Reverser Voltage Figure 8. Gain Bandwidth Product vs.
Collector Current
Figure 9. Power Dissip ation vs. Ambient T emperat ure
0.1 1 10 100
2
5
10
20
V - COLLECTOR VOLTAGE(V)
CAPACITANCE (pF)
Cib
Cob
f = 1. 0 MHz
1102050100150
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
f - GAIN BANDWIDTH PRODUCT (MHz)
C
T
V = 5V
ce
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
SOT-23
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I76
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