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FEATURES
DIRECTREPLACEMENTFORSILICONIX2N4393
LOWONRESISTANCErDS
(
on
)
≤100Ω
LOWGATEOPERATINGCURRENTID
(
off
)
=5pA
FASTSWITCHINGt
(
ON
)
≤=15ns
ABSOLUTEMAXIMUMRATINGS1@25°C(unlessotherwisenoted)
MaximumTemperatures
StorageTemperature‐65°Cto+200°C
OperatingJunctionTemperature‐55°Cto+200°C
MaximumPowerDissipation
ContinuousPowerDissipation 1800mW
MAXIMUMCURRENT
GateCurrent(Note1)IG=50mA
MAXIMUMVOLTAGES
GatetoDrainVoltage/GatetoSourceVoltage‐40V
2N4393ELECTRICALCHARACTERISTICS@25°C(unlessotherwisenoted)
SYMBOLCHARACTERISTICMINTYP.MAXUNITSCONDITIONS
BVGSSGatetoSourceBreakdownVoltage‐40 ‐‐ ‐‐
V
IG=‐1µA,VDS=0V
VGS
(
off
)
GatetoSourceCutoffVoltage‐0.5 ‐‐ 3VDS=20V,ID=1nA
VGS
(
F
)
GatetoSourceForwardVoltage ‐‐ 0.71 IG=1mA,VDS=0V
VDS
(
on
)
DraintoSourceOnVoltage ‐‐ 0.250.4VGS=0V,ID=3mA
VDS
(
on
)
DraintoSourceOnVoltage ‐‐ 0.3 ‐‐ VGS=0V,ID=6mA
VDS
(
on
)
DraintoSourceOnVoltage ‐‐ 0.35 ‐‐ VGS=0V,ID=12mA
IDSSDraintoSourceSaturationCurrent25 ‐‐ 30mAVDS=20V,VGS=0V
IGSSGateReverseCurrent ‐‐ 5‐100
pA
VGS=‐20V,VDS=0V
IGGateOperatingCurrent ‐‐ 5 ‐‐ VDG=15V,ID=10mA
ID(off)
DrainCutoffCurrent
‐‐ 5100VDS=20V,VGS=‐5V
‐‐ 5 ‐‐ VDS=20V,VGS=‐7V
‐‐ 5 ‐‐ VDS=20V,VGS=‐12V
rDS
(
on
)
DraintoSourceOnResistance ‐‐ ‐‐ 100Ω VGS=0V,ID=1mA
2N4393DYNAMICELECTRICALCHARACTERISTICS@25°C(unlessotherwisenoted)
SYMBOLCHARACTERISTICTYPMINMAXUNITSCONDITIONS
gfsForwardTransconductance6 ‐‐ ‐‐ mSVDS=20V,ID=1mA,f=1kHz
gosOutputConductance25 ‐‐ ‐‐ µSVDS=20V,ID=1mA,f=1kHz
rds(on)DraintoSourceOnResistance ‐‐ ‐‐ 100Ω VGS=0V,ID=0A,f=1kHz
CissInputCapacitance12 ‐‐ 14
pF
VDS=20V,VGS=0V,f=1MHz
Crss
ReverseTransferCapacitance
3.3 ‐‐ 3.5VDS=0V,VGS=‐5V,f=1MHz
Crss3.2 ‐‐ ‐‐ VDS=0V,VGS=‐7V,f=1MHz
Crss2.8 ‐‐ ‐‐ VDS=0V,VGS=‐12V,f=1MHz
enEquivalentInputNoiseVoltage3 ‐‐ ‐‐ nV/HzVDS=10V,ID=10mA,f=1kHz
2N4393SWITCHINGELECTRICALCHARACTERISTICS@25°C(unlessotherwisenoted)
SYMBOLCHARACTERISTICTYPMINMAXUNITSCONDITIONS
td(on)
TurnOnTime
2 ‐‐ 15
ns
VDD=10V,VGS(H)=0V
tr2 ‐‐ 5
td(off)
TurnOffTime
6 ‐‐ 50
tf13 ‐‐ 30
Notes:1.Absoluteratingsarelimitingvaluesabovewhichserviceabilitymaybeimpaired
2.Pulsetest:PW≤300µs,DutyCycle≤3%
2N4393SWITCHINGCIRCUITPARAMETERSSWITCHINGCIRCUIT
VGS(L)‐5V
RL3200Ω
ID(on)3mA





2N4393
Single N-Channel JFET switch
Linear S
stems re
laces discontinued Siliconix 2N4393
The 2N4393 features many of the superior
characteristics of JFETs which make it a good choice
for demanding analog switching applications and for
specialized amplifier circuits.
2N4393 Applications:
Analog Switches
Choppers, Sample-and-Hold
Normally “On” Switches, Current Limiters
2N4393 Benefits:
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response, Low Glitches
Eliminates Additional Bufferin
g
Micross Components Europe
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Available Packages:
2N4393 in TO-18
2N4393 in bare die.
Contact Micross for full package and die dimensions
TO-18 (Bottom View)
www.DataSheet4U.com