2N6667 Transistors
PNP Darlington Transistor
Military/High-RelN
V(BR)CEO (V)60
V(BR)CBO (V)60
I(C) Max. (A)10
Absolute Max. Power Diss. (W)26
Maximum Operating Temp (øC)150õ
I(CBO) Max. (A)3.0m¥¶
@V(CBO) (V) (Test Condition)
h(FE) Min. Current gain.1.0k
h(FE) Max. Current gain.20k
@I(C) (A) (Test Condition)5.0
@V(CE) (V) (Test Condition)3.0
f(T) Min. (Hz) Transition Freq20M
@I(C) (A) (Test Condition)
@V(CE) (V) (Test Condition)
V(CE)sat Max. (V)
@I(C) (A) (Test Condition)
@I(B) (A) (Test Condition)
t(d) Max. (s) Delay time.
t(r) Max. (s) Rise time
t(on) Max. (s) On time.
t(s) Max. (s) Storage time.
t(f) Max. (s) Fall time.
t(off) Max. (s) Off time
Semiconductor MaterialSilicon
Package StyleTO-220AB
Mounting StyleT
Pinout Equivalence Code3-37
Ckt. (Pinout) NumberTR00300037
Description