2N5883 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

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. . . designed for general–purpose power amplifier and switching applications.

•Low Collector–Emitter Saturation Voltage —

VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc

•Low Leakage Current

ICEX = 1.0 mAdc (max) at Rated Voltage

•Excellent DC Current Gain —

hFE = 20 (min) at IC = 10 Adc

•High Current Gain Bandwidth Product —

fτ = 4.0 MHz (min) at IC = 1.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

2N5883

2N5885

ÎÎÎÎ

2N5884

2N5886

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCB

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

7.5

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

200

1.15

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

0.875

ÎÎÎ

C/W

(1) Indicates JEDEC registered data. Units and conditions differ on some parameters and

re–registration reflecting these changes has been requested. All above values most or exceed

present JEDEC registered data.

200

00 25 50 75 100 125 150 200

Figure 1. Power Derating

TC, CASE TEMPERATURE (

PD, POWER DISSIPATION (WATTS)

175

100

125

150

175

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by 2N5883/D

 Motorola, Inc. 1995









*Motorola Preferred Device

25 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60–80 VOLTS

200 WATTS



CASE 1–07

TO–204AA

(TO–3)





REV 7

   

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1) 2N5883, 2N5885

(IC = 200 mAdc, IB = 0) 2N5884, 2N5886

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = 30 Vdc, IB = 0) 2N5883, 2N5885

Collector Cutoff Current (VCE = 40 Vdc, IB = 0) 2N5984, 2N5886

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N5883, 2N5885

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc) 2N5884, 2N5886

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150

C) 2N5883, 2N5885

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150

C) 2N5884, 2N5886

ÎÎÎÎ

ICEX

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) 2N5883, 2N5885

(VCB = 80 Vdc, IE = 0) 2N5884, 2N5886

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (1) (IC = 3.0 Adc, VCE = 4.0 Vdc)

DC Current Gain (1) (IC = 10 Adc, VCE = 4.0 Vdc)

DC Current Gain (1) (IC = 25 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

4.0

ÎÎÎÎ

—

100

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (1) (IC = 15 Adc, IB = 1.5 Adc)

Collector–Emitter Saturation Voltage (1) (IC = 25 Adc, IB = 6.25 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.0

4.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage (1) (IC = 25 Adc, IB = 6.25 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (1) (IC = 10 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)

ÎÎÎÎ

4.0

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance 2N5883, 2N5884

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 2N5885, 2N5886

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

1000

500

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 30 Vdc, IC = 10 Adc,

IB1 = IB2 = 1.0 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

0.7

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 30 Vdc, IC = 10 Adc,

IB1 = IB2 = 1.0 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

IB1 = IB2 = 1.0 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

0.8

ÎÎÎ

µs

*Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%. (2) fT = |hfe| • ftest.

Figure 2. Switching Time Equivalent Test Circuits

2.0

0.3

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMPERES)

t, TIME ( s)

1.0

0.5

0.2

0.07

0.05

0.02 0.5 0.7 1.0 2.0 3.0 5.0 7.0 30

TJ = 25

IC/IB = 10

VCC = 30 V

VBE(off) = 2 V

0.03

0.3

0.1

2N5883, 2N5884 (PNP)

2N5885, 2N5886 (NPN)

0.7

+2.0 V

≤

20 ns –11 V

10 to 100

DUTY CYCLE

≈

2.0%

VCC –30 V

TO SCOPE

≤

20 ns

VCC –30 V

TO SCOPE

≤

20 ns

+9.0 V

–11 V

10 to 100

DUTY CYCLE

≈

2.0%

≤

20 ns VBB +7.0 V

3.0

TURN–ON TIME

TURN–OFF TIME

FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.

INPUT LEVELS ARE APPROXIMATELY AS SHOWN.

FOR NPN, REVERSE ALL POLARITIES.

   

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.02

0.5

0.2

0.1

0.05

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 2000500

JC(t) = r(t)

JC = 0.875

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

SINGLE PULSE

0.1

1000

0.01

100

1.0

Figure 5. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

0.1 2.0 3.0 7.0 10 20 30 50 100

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATION @ TC = 25

(SINGLE PULSE)

2.0

IC, COLLECTOR CURRENT (AMPERES)

TJ = 200

CURVES APPLY BELOW RATED VCEO

500

1 ms

1.0

0.5

0.2

5.0

2N5883, 2N5885

2N5884, 2N5886

5 ms

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 200

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

200

C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

0.3

Figure 6. Turn–Off Time

IC, COLLECTOR CURRENT (AMPERES)

5.0

3.0

0.7

0.5

0.1 0.5 0.7 1.0 2.0 5.0 10 30

TJ = 25

VCC = 30 V

IC/IB = 10

IB1 = IB2

0.2

t, TIME ( s)

3.0

3000

0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

300 2.0 5.0 10 20 100500.2 0.5 1.0

C, CAPACITANCE (pF)

2000

700

500

TJ = 25

Cib

Cob

1.0

7.0

1000

7.0

2N5883, 2N5884 (PNP)

2N5885, 2N5886 (NPN)

Cib Cob

2.0

0.3 2N5883, 2N5884 (PNP)

2N5885, 2N5886 (NPN)

   

4 Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1000

0.3

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMPERES)

10 0.5 0.7 1.0 3.0 5.0 7.0 10 30

100

hFE, DC CURRENT GAIN

200

300

VCE = 4.0 V

2.0 20

PNP DEVICES

2N5883 and 2N5884

IC, COLLECTOR CURRENT (AMPERES)

hFE, DC CURRENT GAIN

NPN DEVICES

2N5885 and 2N5886

Figure 9. Collector Saturation Region

2.0

0.01 IB, BASE CURRENT (AMPERES)

00.02 0.1 0.2 1.0 10

0.8

0.4

IC = 2.0 A

TJ = 25

5.0 A

1.2

1.6

0.05 0.5

10 A

IC, COLLECTOR CURRENT (AMPERES)

TJ = 25

2.0

0.3

IC, COLLECTOR CURRENT (AMPERES)

0.5 0.7 1.0 2.0 3.0 7.0 10 30

1.6

1.2

0.8

0.4

TJ = 25

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

Figure 10. “On” Voltages

VBE @ VCE = 4 V

5.0

IC, COLLECTOR CURRENT (AMPERES)

TJ = 25

V, VOLTAGE (VOLTS)

700

500 TJ = 150

–55

0.3 0.5 0.7 1.0 3.0 5.0 7.0 10 302.0 20

VCE = 4.0 V

TJ = 150

–55

2.0 5.0

20 A IC = 2.0 A 5.0 A 10 A 20 A

1000

100

200

300

700

500

2.0

0.01

00.02 0.1 0.2 1.0 10

0.8

0.4

1.2

1.6

0.05 0.5 2.0 5.0

2.0

0.3 0.5 0.7 1.0 2.0 3.0 7.0 10 30

1.6

1.2

0.8

0.4

0205.0

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 4 V

   

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

   

6 Motorola Bipolar Power Transistor Device Data

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Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

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2N5883/D

*2N5883/D*

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