FCI 2SB772/2SB772S PNP Epitaxial Silicon Transistor Semiconductor AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING e Complement to 2SD882 (ABSOLUTE MAXIMUM RATINGS [Ta = 25 ) } Characteristic Symbol | 2SB772S | 2SB772 | Unit : Max Max TO-126 Collector-Base Voltage Voepo ~50 -50 Vv Collector-Emitter Voltage Vero 40 40 Vv Emitter-Bias Voltage VERO 5. -5 Vv Collector Current (DC) k | -2 3 A *Collector Current (Pulse) Ik 5 7 A Base Current (DC) 4b 0.6 0.6 A Collector Dissipation (Ta=25c ) Po - 10 WwW : Collector Dissipation (Tc=25*c } Pe ] 1 WwW 1.Emitter 2.Collector 3.Base Junction Temperature Tj 150 150 c Storage Temperature Tstg -55~150 | -55~150 | PW<=<10, s,Duty Cycle< 50% (ELECTRICAL CHARACTERISTICS (Ta = 25%) ) Characteristics Symbol Test condition Min Typ Max Unit Collector Cutoff Current lepo Ven-30V,Ie=0 -l nA Emitter Cutoff Current Tezo Vep=-3VIc=0 1 wA *DC Current Gain brs; Vee=2V,Ic=-20mA 30 220 hee Vee-2V Ie-1A 60 160 400 *Collector Emitter Saturation Voltage Vegisan ILo=2A Tp=0.2A 0.3 -0.45 Vv *Base Emitter Saturation Voltage Vegisan Ie=-2A,]p=-0.2A | -1.0 -2.0 Vv Current Gain Bandwidth Product fy Vee=-5V,1e=0.1A 80 , MHz Output Capacitance Cob Vep=10V,Ig=0 55 pF f=1MHz Noise Figure NF Vee=10V,L=1lmA 4 dB Rs=10K OQ fH 1 KHz Pulse Test PW =< 350, s,Duty Cycles 2% hrz(2) CLASSIFICATION Classification R Q Y- G byz(2) 60-120 100-200 160-320 200-400FC) 2SB772/2SB772S PNP Epitaxial Silicon Transistor Semiconductor STATIC CHARACTERISTIC DC CURRENT GAIN 1 500 5 ipo }Oma 2 g lp=-9mA = z Ip=8mA ~ 100 In=-?mA BR 50 ce Ip=-6mA = 30 5 Ip=5mA 2 3 lp=~4mA 2 409 3 a 2 IB=-3mA s 5 = B=- B=-1mA 0 -4 -8 -12 -16 -20 1 -5-10 -50-100-300-1000-5000 Vcr .COLLECTOR-EMITTER VOLTAGE Ie(mA).COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE COLLECTOR-EMITTER SATURATION VOLTAGE F 1000 -5000 500 300 f ec o C ob(pF).CAPACITANCE on 6 88 Ver(sal) Vae(sat). (mY). SATURATION VOLTAGE \ o Q a -5-10 -50-100-300-1000-5000 -1 -3-5 -10 ~30-50-100-300-500- 1000 L(maA).COLLECTOR CURRENT Vee (V). COLLECTOR-BASE VOLTAGE CURRENT GAIN-BANDWIDTH PRODUCT SAFE OPERATING AREAS 1 10 500 5 300 , 3 1 50 Ic (A).COLLECTOR CURRENT f+ (MHz). CURRENT GAIN BANDWIDTH PRODUCT as 30 0.3 10 OL 5 0.05 3 0.03 1 0.01 0.01-0.03-0.05-0.1 -0.3-0.5-1 -3 -5 -10 1 3.5 10 30 SO 100 300 500 1000 Ic{A).COLLECTOR CURRENT Vee (V). COLLECTOR~BASE VOLTAGEFGI . 2SB772/2SB772S PNP Epitaxial Silicon Transistor Semiconductor DERATING CURVE OF SAFE OPERATING AREAS POWER DERATING 160 149 120 100 80 60 dT(%).1c DERATING 40 AT(%).le DERATING 20 0 50 100 150 200 Te(c)CASE TEMPERATURE Te(C) CASE TEMPERATURE 8-6