SST6838 Transistors NPN general purpose transistor r fo SST6838 zFeatures zExternal dimensions (Unit : mm) 1) BVCEO minimum is 40V (IC = 1mA) 2) Complements the SST6839. SST6838 d e d n s e n m ig s m e o D c e w R e t N o N 2.90.2 0.95 +0.2 -0.1 1.90.2 0.450.1 0.95 0.95 (2) 0.2 1.3+ -0.1 (1) Part No. SST6838 Pacaging type SST3 RBR T116 (3) 3000 ROHM : SST3 Marking Code Basic ordering unit (pieces) 2.40.2 zPackage, marking and packaging specifications 0~0.1 0.2Min. All terminals have the same dimensions +0.1 0.15 -0.06 0.4 +0.1 -0.05 (1) Emitter (2) Base (3) Collector zAbsolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Parameter VCBO VCEO VEBO IC 50 40 5 0.2 V V V A Collector power dissipation Junction temperature Storage temperature PC Tj Tstg 0.2 150 -55 to +150 W C C zElectrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit BVCBO BVCEO 50 40 - - - - V V - - - - - - - - 0.5 5 0.5 5 - - 0.4 VCE(sat) - - 200 - - - 0.5 0.7 - V IC/IB=10mA/0.2mA IC/IB=10mA/0.2mA DC current transfer ratio hFE1 - - 800 - - hFE2 150 - - 1000 DC current transfer ratio - - VCE/IC=5V/1mA VCE/IC=5V/1mA VCE/IC=5V/10mA Transition frequency Collector output capacitance Emitter input capacitance fT Cob Cib 50 - - 180 2 17 - 3.5 - MHz pF pF Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current ICBO Emitter cutoff current IEBO Collector-emitter saturation voltage A A Conditions IC=10A IC=1mA VCB=30V VCB=30V VEB=4V (Ta= -40C to +125C) (Ta= -40C to +125C) (Ta=85C) (Ta=125C) (Ta=85C) VEB=4V (Ta=125C) (Ta=25C) (Ta=85C) (Ta=125C) IC/IB=50mA/5mA VCE/IC=5V/1mA VCE=12V , IC=2mA , f=100MHz VCB=12V , f=1MHz (Ta= -40C to +25C) (Ta=85C) (Ta=125C) (Ta= -40C to +25C) (Ta=25C) (Ta=25C) (Ta=25C) VEB=0.5V , f=1MHz Rev.A 1/3 SST6838 Transistors zElectrical characteristic curves COLLECTOR CURRENT : IC (mA) 10 0.2 Fig.1 0.10mA 20 0.05mA IB=0A 0 0.4 Fig.2 Grounded emitter propagation characteristics 0.8 1.2 1.6 2.0 500 50 20 10 0.2 0.5 0.2 VCE=5V 3V 1V 0.5 1 2 5 0.05 10 20 25C -55C 100 50 20 10 0.2 50 100 200 0.5 1 2 5 10 20 VCE=5V 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) IC/IB=10 Ta=100C 25C -55C 0.02 0.01 0.2 Ta=100C 200 COLLECTOR CURRENT : IC (mA) N ot 0.1 DC CURRENT GAIN : hFE 100 27A 8 24A 21A 6 18A 15A 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 0.5 0.2 9A 3A Ta=100C 25C -55C 0.05 0.02 0.01 2 5 10 20 4 IB=0A 12 8 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( ) 0.5 Ta=25C 0.2 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 Fig. 6 Collector-emitter saturation voltage vs. collector current IC/IB=50 0.5 1 6A 2 COLLECTOR CURRENT : IC (mA) 0.1 0.2 12A 4 Grounded emitter output characteristics ( ) Ta=25C 200 30A Ta=25C 0 0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE 0.15mA 40 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.20mA 0 0.1 0 500 0.25mA 60 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.5 0.30mA 50 100 COLLECTOR CURRENT : IC (mA) Fig.8 Collector-emitter saturation voltage vs. collector current () TRANSITION FREQUENCY : fT (MHz) 1 80 10 R ec N o ew m m D e es n d ig ed ns fo r 2 25C -55C 5 Ta=100C COLLECTOR CURRENT : IC (mA) 20 0.50mA mA 0.45 A 0.40m 0.35mA Ta=25C VCE=6V COLLECTOR CURRENT : IC (mA) 100 50 Ta=25C VCE=6V 500 200 100 50 -0.5 -1 -2 -5 -10 -20 -50 -100 EMITTER CURRENT : IE (mA) Fig.9 Gain bandwidth product vs. emitter current Rev.A 2/3 SST6838 10 Ta=25C f=1MHz IE=0A IC=0A Cib 5 2 Co b 1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Ta=25C f=32MHZ VCB=6V 200 100 50 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 20 10 -0.2 -0.5 -1 -2 -5 -10 EMITTER CURRENT : IE (mA) Fig.11 Base-collector time constant vs. emitter current N ot Fig.10 BASE COLLECTOR TIME CONSTANT : Cc*rbb' (ps) 20 R ec N o ew m m D e es n d ig ed ns fo r COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Transistors Rev.A 3/3 Appendix Notes R ec N o ew m m D e es n d ig ed ns fo r No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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