SST6838
Transistors
Rev.A 1/3
NPN general purpose transistor
SST6838
zFeatures zExternal dimensions (Unit : mm)
1) BV
CEO
minimum is 40V (I
C
= 1mA)
SST6838
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
the same dimensions
All terminals have
0~0.1
0.2Min.
2.4
±
0.2
1.3
0.95
0.45
±
0.1
0.15
0.4
2.9
±
0.2
1.9
±
0.2
0.950.95
+
0.2
−0.1
−
0.1
+0.2
+0.1
−
0.06
+0.1
−
0.05
(2)
(1)
(3)
2) Complements the SST6839.
zPackage, marking and packaging specifications
Part No. SST6838
SST3
RBR
T116
3000
Pacaging type
Marking
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
50
40
5
0.2
150
−55 to +150
Unit
V
V
V
A
P
C
0.2 W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power dissipation
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV
CEO
I
EBO
50
40
−
−
−
−
−
−
−
−
0.5
5
V
V
µA
I
C
=10µA
I
C
=1mA
V
EB
=4V
V
EB
=4V
I
CBO
−
−
−
−
0.5
5µAV
CB
=30V
V
CB
=30V
200 −−
−−0.7 I
C
/I
B
=10mA/0.2mA
V
CE(sat)
−−0.5 V I
C
/I
B
=10mA/0.2mA
V
CE
/I
C
=5V/1mA
V
CE
/I
C
=5V/10mAh
FE2
150 −−−
−V
CE
/I
C
=5V/1mA−1000
−V
CE
/I
C
=5V/1mAh
FE1
−800 −
f
T
Cob 50
−
180
2
−
3.5 MHz
pF V
CE
=12V , I
C
=2mA , f=100MHz
V
CB
=12V , f=1MHz
Cib −17 −pF V
EB
=0.5V , f=1MHz
(Ta= −40
°C
to +125
°C
)
(Ta= −40
°C
to +125
°C
)
(Ta=85
°C
)
(Ta=125
°C
)
(Ta=85
°C
)
(Ta=125
°C
)
(Ta=85
°C
)
−−0.4 I
C
/I
B
=50mA/5mA (Ta=25
°C
)
(Ta=125
°C
)
(Ta= −40
°C to
+25
°C
)
(Ta=85
°C
)
(Ta=125
°C
)
(Ta= −40
°C to
+25
°C
)
(Ta=25
°C
)
(Ta=25
°C
)
(Ta=25
°C
)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter cutoff current
Collector cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
Not Recommended for
New Designs
SST6838
Transistors
Rev.A 2/3
zElectrical characteristic curves
Fig.1 Grounded emitter propagatio
n
characteristics
0
0.1
0.2
0.5
2
20
50
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
5
10
Ta
=
100°C
V
CE
=6V
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
25°C
−55°C
Fig.2 Grounded emitter output
characteristics ( Ι )
0
20
40
60
80
100
0.4 0.8 1.2 1.6 2
.0
0
COLLECTOR CURRENT : IC
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V
)
0.05mA
0.10mA
0.15mA
0.25mA
0.30mA
0.35mA
0.20mA
Ta=25°C
IB=0A
0.40mA
0.50mA
0.45mA
0
0
2
8
10
4 8 12 16
4
6
2
0
I
B
=0A
Ta=25°C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V
)
3µA
6µA
9µA
12µA
15µA
18µA
21µA
24µA
27µA
30µA
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
0.2
20
10 0.5 1 2 5 10 20 50 100 200
50
100
200
500
V
CE
=5V
3V
1V
Ta=25°C
Fig.4 DC current gain vs.
collector current ( Ι )
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C (mA)
0.2 0.5 1 2 5 10 20 50 100 20
0
20
10
50
100
200
500
Fig.5 DC current gain vs.
collector current ( ΙΙ )
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC (mA)
V
CE
=
5V
Ta=100°C
25°C
−55°C
F
ig. 6 Collector-emitter saturation
voltage vs. collector current
0.2
COLLECTOR SATURATION VOLTAGE : VCE(sat)
(V
)
COLLECTOR CURRENT : I
C
(mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100 20
0
I
C
/I
B
=50
20
10
Ta=25°C
Fig.7 Collector-emitter saturation
voltage vs. collector current ( Ι )
0.2
COLLECTOR SATURATION VOLTAGE : VCE(sat)
(V
)
COLLECTOR CURRENT : I
C
(mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100 20
0
I
C
/I
B
=10
Ta=100°C
25°C
−55°C
Fig.8 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
COLLECTOR SATURATION VOLTAGE : V
CE(sat) (V
)
COLLECTOR CURRENT : IC
(mA)
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 10
0
IC/IB=50
Ta=100°C
25°C
−55°C
Fig.9 Gain bandwidth product vs.
emitter current
50
−0.5 −1−2−5−10 −20 −50 −10
0
100
200
500
Ta=25°C
V
CE
=6V
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Not Recommended for
New Designs
SST6838
Transistors
Rev.A 3/3
Fig.11 Base-collector time constant
vs. emitter current
−0.2 −0.5 −1−2−5−1
0
BASE COLLECTOR TIME CONSTANT : Cc·r
bb'
(p
s)
EMITTER CURRENT : I
E
(mA)
10
20
50
100
200 Ta=25°C
f=32MH
Z
V
CB
=6V
Fig.10 Collector output capacitance vs
.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE : Cib (
pF)
0.2 0.5 1 2 5 10 20 50
1
2
5
10
20
Cob
Ta=25°C
f=1MHz
I
E
=0A
I
C
=0A
Cib
Not Recommended for
New Designs
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Not Recommended for
New Designs
